SM6K2

SM6K2 Transistors 4V Drive Nch+Nch MOS FET SM6K2 Structure Silicon N-channel MOSFET transistor External dimensions (Unit : mm) SMT6 2.9 1.9 0.95 0.95 1.1 0.8 (4) (5) (6) Features 1) Two RHU002N06 chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating mutual interference. 4) Mounting cost and area can be cut in half. 1.6 (3) (2) (1) 2.8 1pin mark 0.3 0.15 Each lead has same dimensions Abbreviated symbol : K2 Packaging specifications Package Code Type SM6K2 Basic ordering unit (pieces) Taping T110 3000 Equivalent circuit (4) (5) ∗1 (6) ∗2 (1) TR1 Drain (2) TR2 Gate (3) TR2 Source (4) TR2 Drain (5) TR1 Gate (6) TR1 Source ∗2 ∗1 (3) (2) (1) ∗1 Gate Protection Diode ∗2 Body Diode Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Drain reverse current Continuous Pulsed Total power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP IDR IDRP PD Tch Tstg ∗1 ∗2 ∗1 ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded. Limits 60 ±20 200 800 200 800 300 200 150 −55 to +150 Unit V V mA mA mA mA mW / TOTAL mW / ELEMENT °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. Thermal resistance Parameter Channel to ambient ∗ With each pin mounted on the recommended lands. Symbol Rth(ch-a) ∗ Limits 416.7 625 Unit °C / W / TOTAL °C / W / ELEMENT Rev.B 0.3Min. 1/4 SM6K2 Transistors Electrical characteristics (Ta=25°C) Parameter Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Symbol IGSS V (BR) DSS IDSS VGS (th) ∗ ∗ Min. − 60 − 1 − − 0.1 − − − Typ. − − − − 1.7 2.8 − 15 8 4 6 5 12 95 2.2 0.6 0.3 Max. ±10 − 1 2.5 2.4 4.0 − − − − − − − − 4.4 − − Unit µA V µA V Ω S pF pF pF ns ns ns ns nC nC nC Test Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=10V ID=200mA, VGS=4V VDS=10V, ID=200mA VDS=10V VGS=0V f=1MHz ID=100mA, VDD 30V VGS=10V RL=300Ω RG =10Ω VDD 30V VGS=10V ID=200mA Drain-source on-state resistance RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ Pulsed l Yfs l Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ − − − − − − − Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. 1.2 Unit V Conditions IS=200mA, VGS=0V Rev.B 2/4 SM6K2 Transistors Electrical characteristic curves GATE THRESHOLD VOLTAGE : VGS (th) (V) 0.8 10V 0.7 8V Ta=25°C Pulsed 1 VDS=10V Pulsed 2.5 VDS=10V ID=1mA Pulsed 0.6 0.5 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 6V 2.0 0.1 Ta=−25°C 25°C 75°C 125°C 0.01 4V 0.4 0.3 0.2 0.1 0.0 0.0 0.5 3.5V VGS=3V 1.5 1.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 GATE-SOURCE VOLTAGE : VGS (V) 0.0 −50 −25 0 25 50 75 100 125 150 DRAIN-SOURCE VOLTAGE : VDS (V) CHANNEL TEMPERATURE : Tch (°C) Fig.1 Typical output characteristics Fig.2 Typical transfer characteristics Fig.3 Gate threshold voltage vs. channel temperature 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VGS=10V Pulsed 10 Ta=125°C 75°C 25°C −25°C Ta=125°C 75°C 25°C −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VGS=4V Pulsed 7 6 5 4 ID=200mA Ta=25°C Pulsed 3 2 100mA 1 0 1.0 0.01 0.1 DRAIN CURRENT : I D (A) 1.0 1.0 0.01 0.1 DRAIN CURRENT : I D (A) 1.0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static drain-source on-State resistance vs. drain current ( Ι ) Fig.5 Static drain-source on-state resistance vs. drain current ( ΙΙ ) Fig.6 Static drain-source on-state resistance vs. gate-source voltage 3.0 REVERSE DRAIN CURRENT : IDR (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) REVERSE DRAIN CURRENT : IDR (A) VGS=10V Pulsed 1 VGS=0V Pulsed 10 Ta=25°C Pulsed VGS=10V 2.5 ID=200mA 1 0.1 2.0 Ta=125°C 75°C 25°C −25°C 0.1 0V 1.5 100mA 0.01 0.01 1.0 −50 −25 0 25 50 75 100 125 150 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 CHANNEL TEMPERATURE : Tch (°C) SOURCE-DRAIN VOLTAGE : VSD (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.7 Static drain-source on-state resistance vs. channel temperature Fig.8 Reverse drain current vs. source-drain voltage ( Ι ) Fig.9 Reverse drain current vs. source-drain voltage ( ΙΙ ) Rev.B 3/4 SM6K2 Transistors FORWARD TRANSFER ADMITTANCE : I Yfs I (S) 1 VGS=10V Pulsed Ta=−25°C 25°C 75°C 125°C 0.01 100 Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) 1000 tf 100 0.1 CAPACITANCE : C (pF) Ta=25°C VDD=30V VGS=10V RG=10Ω Pulsed Ciss 10 td(off) 10 Coss Crss td(on) tr 0.001 0.001 0.01 0.1 1 1 0.01 0.1 1 10 100 1 1 10 100 1000 DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.10 Forward transfer admittance vs. drain current Fig.11 Typical capacitance vs. drain-source voltage Fig.12 Switching characteristics Switching characteristics measurement circuit Pulse width 50% 10% 10% 90% 50% VGS ID D.U.T. RL VDS VGS VDS RG 10% 90% 90% td (off) tf toff VDD td (on) ton tr Fig.13 Switching time test circuit Fig.14 Switching time waveforms Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1