SP8J4

SP8J4 Transistors Switching (−30V, −2.0A) SP8J4 Features 1) Low On-resistance. (270mΩ at 4.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive. (4.5V) External dimensions (Unit : mm) SOP8 (5) (4) 0.4 3.9 6.0 Applications Power switching, DC-DC converter 0.2 0.4Min. Each lead has same dimensions Structure Silicon P-channel MOS FET Equivalent circuit (8) (7) (6) (5) Packaging specifications Package Type SP8J4 Code Basic ordering unit (pieces) Taping TB 2500 ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE 1.75 1.27 (8) (1) 5.0 1/4 SP8J4 Transistors Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits −30 ±20 ±2.0 ±8.0 −1.6 −8.0 2.0 150 −55 to +150 Unit V V A A A A W °C °C ∗1 ∗1 ∗2 Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state − RDS (on) resistance − 1.0 Yfs Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Reverse transfer capacitance Crss − Turn-on delay time td (on) − Rise time tr − Turn-off delay time td (off) − Fall time tf − Total gate charge Qg − Gate-source charge Qgs Gate-drain charge − Qgd ∗Pulsed Typ. − − − − 170 270 320 − 190 45 30 7 10 25 4.5 2.4 1.0 0.8 Max. ±10 − −1 −2.5 235 375 440 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −2.0A, VGS= −10V ID= −1.0A, VGS= −4.5V ID= −1.0A, VGS= −4.0V VDS= −10V, ID= −1.0A VDS= −10V VGS=0V f=1MHz ID= −1.0A VDD −15V VGS= −10V RL=15Ω RGS=10Ω VDD −15V VGS= −5V ID= −2.0A ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Body diode characteristics (source-drain characteristics) VSD − − −1.2 Forward voltage V IS= −1.6A, VGS=0V 2/4 SP8J4 Transistors Electrical characteristic curves STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VDS= −10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C Ta=25°C Pulsed VGS= −4V VGS= −4.5V VGS= −10V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 10000 10000 VGS= −10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C DRAIN CURRENT : −ID (A) 1 1000 1000 0.1 100 100 0.01 0.001 1.5 2.0 2.5 3.0 3.5 10 0.1 1 10 10 0.1 1 10 GATE-SOURCE VOLTAGE : −VGS (V) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10000 1000 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1000 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C REVERSE DRAIN CURRNT : −IDR (A) VGS= −4.5V Pulsed 10000 VGS= −4V Pulsed 10 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 100 0.1 10 0.1 1 10 10 0.1 1 10 0.01 0.0 0.5 1.0 1.5 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.4 Static Drain-Source On-State vs. Drain Current Fig.5 Static Drain-Source On-State vs. Drain Current Fig.6 Reverse Drain Current Source-Drain Current 1000 GATE-SOURCE VOLTAGE : −VGS (V) SWITCHING TIME : t (ns) Ta=25°C f=1MHz VGS=0V Ciss 1000 CAPACITANCE : C (pF) tf 100 100 Ta=25°C VDD= −15V VGS= −10V RG=10Ω Pulsed 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 Ta=25°C VDD= −15V ID= −2.0A RG=10Ω Pulsed td (off) Coss Crss 10 10 td (on) tr 1 0.01 0.1 1 10 100 1 0.01 0.1 1 10 3 3.5 4 DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.7 Typical Capacitance vs. Drain-Source Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4 SP8J4 Transistors Measurement circuits VGS ID RL D.U.T. VDS VGS 10% 90% 90% 90% 10% td(off) toff tr RG VDD VDS td(on) ton 10% tr Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VG VGS ID RL IG(Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0