SP8K24FU6TB

SP8K24 Transistor 4V Drive Nch+Nch MOSFET SP8K24 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions zPackaging dimensions Package Type 0.4Min. 3.9 6.0 zFeatures 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). zEquivalent circuit Taping (8) (7) (6) (5) (8) (7) (6) (5) TB Code Basic ordering unit (pieces) 2500 SP8K24 ∗2 ∗2 (1) (2) (3) (4) ∗1 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP *1 IS ISP *1 Total power dissipation PD Chanel temperature Range of Storage temperature Tch Tstg *2 Limits Unit 45 V ±20 V ±6.0 A ±24 A 1 A 24 A 2 W / TOTAL 1.4 W / ELEMENT o 150 C o -55 to +150 C *1 PW ≤10µｓ、Duty cycle ≤ 1% *2 Mounted on a ceramic board Rev.B 1/4 SP8K24 Transistor zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Parameter − 45 − 1.0 − − − 6.0 − − − − − − − − − − − − − − 18 24 26 − 1400 310 175 19 30 72 27 15.4 3.7 6.5 ±10 − 1 2.5 25 34 37 − − − − − − − − 21.6 − − Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Conditions Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS=±20V, VDS=0V ID= 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID= 1mA ID= 6.0A, VGS= 10V ID= 6.0A, VGS= 4.5V ID= 6.0A, VGS= 4.0V VDS= 10V, ID= 6.0A VDS= 10V VGS=0V f=1MHz VDD 25V ID= 3.0A VGS= 10V RL= 8Ω RG=10Ω VDD 25V, VGS= 5V ID= 6.0A RL= 4Ω, RG= 10Ω Min. Typ. Max. Unit － － 1.2 V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD * Condition IS=6.0A/VGS=0V * pulsed Rev.B 2/4 SP8K24 Transistor zElectrical characteristic curves 10 Ta=125oC 　　　75oC 　　　25oC 　　-25oC 0.1 0.01 1.0 1.5 2.0 2.5 3.0 100 10 1 0.01 3.5 VGS=4.5V pulsed 100 10 1 10 0.01 10 Ta=25oC pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=0V pulsed 150 -25oC 100 100 10 ID=6.0A 50 10 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (2) 200 Ta=125oC 75oC 25oC 1 Drain Current : ID [A] Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (1) 1000 VGS=4V pulsed 0.1 Drain Current : ID [A] Fig.1 Typical Transfer Characteristics Ta=125oC 75oC 25oC -25oC 1 0.1 Gate-Source Voltage : VGS [V] Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125oC 75oC 25oC -25oC Source Current : Is [A] 1 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] Drain Currnt : ID [A] 1000 1000 VDS=10V pulsed Ta=125oC 75oC 1 25oC -25oC 0.1 ID=3.0A 0 1 0.01 0.1 1 0 10 5 Drain Current : ID [A] 0.01 0.0 15 Gate-Source Voltage : VGS [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (3) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Switching Time : t [ns] Coss 100 Ta=25oC f=1MHz VGS=0V Crss 10 Ta=25oC VDD=25V VGS=10V tf 100 RG=10Ω Pulsed td(off) td(on) 10 tr 1 0.1 1 10 Drain-Source Voltage : VDS [V] Fig.7 Typical capacitance vs. Source-Drain Voltage 100 1.5 10 1000 1000 1.0 Fig.6 Source-Current vs. Source-Drain Voltage Gate-Source Voltage : V GS [V] Ciss 0.5 Source-Drain Voltage : VSD [V] 10000 10000 Capacitance : C [pF] 10 Ta=25oC VDD=25V ID=6.0A 8 RG=10Ω Pulsed 6 4 2 0 0.01 0.1 1 Drain Current : ID [A] Fig.8 Switching Characteristics 10 0 10 20 30 Total Gate Charge : Qg [nC] Fig.9 Dynamic Input Characteristics Rev.B 3/4 SP8K24 Transistor zMeasurement circuits Pulse Width VGS ID VDS RL 90% 50% 10% VGS VDS 50% 10% D.U.T. 10% RG VDD 90% td(on) ton Fig.10 Switching Time Test Circuit 90% td(off) tr tr toff Fig.11 Switching Time Waveforms VG VGS ID VDS RL IG (Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0