SP8K64

SP8K64 Transistors 4V Drive Nch+Nch MOSFET SP8K64 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Package Type SP8K64 Code Basic ordering unit (pieces) Taping TB 2500 Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature ∗1 Pw 10µs, Duty cycle 1% ∗2 Mounted on a ceramic board. ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch Tstg ∗2 Limits 30 ±20 ±9 ±36 1.6 36 2.0 1.4 150 −55 to +150 Unit V V A A A A W/TOTAL W/ELEMENT °C °C 1/4 SP8K64 Transistors Electrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed ∗ RDS (on) Yfs ∗ Ciss Coss Crss td (on) ∗ tr ∗ td (off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗ Min. − 30 − 1.0 − − − 6.5 − − − − − − − − − − Typ. − − − − 14 17 18 − 1600 230 190 15 40 60 75 15.0 4.0 4.4 Max. ±10 − 1 2.5 19 23 24.5 − − − − − − − − 22.5 − − Unit µA V µA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=9A, VGS=10V ID=9A, VGS=4.5V ID=9A, VGS=4.0V ID=9A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.5A, VDD 15V VGS=10V RL=3.33Ω RG =10Ω ID=9A, VDD 15V VGS=5V RL=1.67Ω, RG =10Ω Body diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS=9A, VGS=0V 2/4 SP8K64 Transistors Electrical characteristic curves STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VDS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 100 1000 VGS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C DRAIN CURRENT : ID (A) 10 100 1 0.1 VGS=4.0V VGS=4.5V VGS=10V 10 0.01 0.001 1.0 1.5 2.0 2.5 3.0 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 100 GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current( I ) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current(ΙΙ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 VGS=4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1000 VGS=4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 90 80 70 60 50 40 30 20 10 0 0 5 10 ID=9A ID=4.5A Ta=25°C Pulsed 100 100 10 10 1 0.01 0.1 1 10 100 1 0.01 0.1 1 10 100 15 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(ΙΙΙ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ι ) Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage FORWARD TRANSFER ADMITTANCE : Yfs (S) 100 VDS=10V Pulsed Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 10000 SWITCHING TIME : t (ns) Ta=25°C f=1MHz VGS=0V 10000 CAPACITANCE : C (pF) 1000 10 Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed tf 100 Ciss 1000 td (off) td (on) 1 10 tr 1 0.01 0.1 0.01 0.1 1 10 100 100 0.01 Coss Crss 0.1 1 10 100 0.1 1 10 100 DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Switching Characteristics 3/4 SP8K64 Transistors 10 GATE-SOURCE VOLTAGE : VGS (V) SOURCE CURRENT : IS (A) Ta=25°C VDD=15V ID=8A RG=10Ω Pulsed 100 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 5 1 0.1 0 0 5 10 15 20 25 30 35 40 0.01 0.0 0.5 1.0 1.5 TOTAL GATE CHARGE : Qg (nC) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.10 Dynamic Input Characteristics Fig.11 Source Current vs. Source-Drain Voltage Measurement circuit Pulse Width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% RG VDD td(on) ton 90% tr td(off) toff 90% tr Fig.12 Switching Time Test Circuit Fig.13 Switching Time Waveforms VG VGS ID RL VDS VGS Qgs Qg IG (Const.) D.U.T. RG VDD Qgd Charge Fig.14 Gate Charge Test Circuit Fig.15 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0