SP8K80

Data Sheet 10V Drive Nch MOSFET SP8K80  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) SOP8 Features 1) Built-in G-S protection diode. 2) Small surface mount package(SOP8). (8) (7) (6) (5) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain (1) (2) (3) (4)  Application Switching  Packaging specifications Type SP8K80 Package Code Basic ordering unit (pieces) Taping TB 2500   Inner circuit (8) (7) (6) (5) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 (1) (2) (3) ∗1 (4) 1 ESD PROTECTION DIODE 2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25°C Limits 500 30 0.5 2 0.5 2 0.25 0.017 2 0.2 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP IS ISP IAS EAS PD Tch Tstg *1 *3 *1 *2 *2 *4 *3 Limited only by maximum channel temperature allowed. *4 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A SP8K80  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 500 3.0 0.1 Typ. 9.0 23.5 36.5 2.4 10 18 25 170 3.8 1.3 1.6 Max. 10 100 5.0 11.7 Unit A V A V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=0.25A, VGS=10V VDS=10V, ID=0.25A VDS=25V VGS=0V f=1MHz VDD 250V, ID=0.25A VGS=10V RL=1000 RG=10 VDD 250V ID=0.5A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions IS=0.25A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A SP8K80 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 0.1 Ta=25°C Pulsed 0.08 Drain Current : ID [A] VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V VGS=6.0V 0.06 VGS=5.0V 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 0.5 VGS=10.0V VGS=8.0V 0.4 VGS=7.0V VGS=6.5V Ta=25°C Pulsed VGS=6.0V Drain Current : ID [A] 0.3 0.04 0.2 VGS=5.0V 0.02 VGS=4.5V 0.1 VGS=4.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.0 0 1 2 3 4 5 6 7 8 9 10 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 1 VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 6 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed 5 Drain Currnt : ID [A] 0.1 4 0.01 3 0.001 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Gate-Source Voltage : VGS [V] 2 -50 0 50 100 150 Channel Temperature : Tch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 Static Drain-Source On-State Resistance : RDS(on) [Ω] VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 25 VGS=10V pulsed 20 ID=0.50A 15 10 10 ID=0.25A 5 1 0.01 0 0.1 Drain Current : ID [A] 1 -50 0 50 100 150 Channel Temperature : Tch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.10 - Rev.A SP8K80 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 1 VDS=10V pulsed 1 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Forward Transfer Admittance Yfs [S] 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.001 0.001 Source Current : IS [A] 1 0.01 0.01 0.1 0 0.5 1 1.5 2 Drain Current : ID [A] Source-Drain Voltage : VSD [V] FIg.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 20 18 Static Drain-Source On-State Resistance RDS(on) [W ] 16 1000 14 12 10 8 6 10 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Gate-Source Voltage : VGS [V] 1 0.01 ID=0.5A Switching Time : t [ns] Ta=25°C Pulsed 10000 Fig.10 Switching Characteristics tf VDD≒250V VGS=10V RG=10Ω Ta=25°C Pulsed td(off) 100 tr ID=0.25A td(on) 0.1 Drain Current : ID [A] 1 Fig.11 Dynamic Input Characteristics 12 Ta=25°C VDD=250V ID=0.5A Pulsed Capacitance : C [pF] 1000 Fig.12 Typical Capacitance vs. Drain-Source Voltage 10 Gate-Source Voltage : VGS [V] Coss 100 Ciss Ta=25°C f=1MHz VGS=0V 8 6 10 Crss 4 1 2 0 0 1 2 3 4 5 Total Gate Charge : Qg [nC] 0.1 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.10 - Rev.A SP8K80 　 Data Sheet Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse:1unit 10 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) 1 Drain Current : ID [ A ] PW = 100μs 0.1 1 0.1 PW = 1ms PW = 10ms 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 Ta=25°C Single Pulse:1unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.001 0.1 1 10 100 1000 Pulse width : Pw (s) DC operation Drain-Source Voltage : VDS [ V ] Fig.15 Reverse Recovery Time vs. Source Current 1000 Ta=25°C di/dt=50A/μs VGS=0V Pulsed Reverse Recovery Time : trr [ns] 100 10 0.1 Source Current : IS [A] 1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A SP8K80  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS IAS VDD EAS = 1 2 L IAS 2 D.U.T. RG VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A