SP8M10FRATB

SP8M10FRA SP8M10 Transistors AEC-Q101 Qualified 4V Drive Nch+Pch MOSFET SP8M10FRA SP8M10 SOP8 5.0 1.75 0.4 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). 1pin mark 0.2 Each lead has same dimensions zEquivalent circuit Taping (8) (7) (6) (5) (8) (7) (6) (5) TB Quantity (pcs) SP8M10FRA SP8M10 1.27 0.4Min. 3.9 6.0 e N co ew m m D e es n d ig e ns d Package (4) (1) zPackaging specifications Code (5) (8) zApplication Power switching, DC / DC converter. Type fo r zDimensions (Unit : mm) zStructure Silicon N-channel / P-channel MOSFET 2500 ∗2 ∗2 (1) (2) (3) (4) ∗1 (1) ∗1 (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain R ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zAbsolute maximum ratings (Ta=25°C) ot Parameter N Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Symbol Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits Nchannel Pchannel 30 −30 ±20 ±20 ±7.0 ±4.5 ±28 ±18 1.6 −1.6 28 −18 2 150 −55 to +150 Unit V V A A A A W °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD. zThermal resistance Parameter Channel to ambient Symbol Rth (ch-a)∗ Limits 62.5 Unit °C / W ∗MOUNTED ON A CERAMIC BOARD. 20190527-Rev.C 1/5 SP8M10FRA SP8M10 Transistors N-ch zElectrical characteristics (Ta=25°C) Symbol Static drain-source on-state resistance ∗Pulsed Yfs ∗ Ciss Coss Crss td (on) ∗ tr ∗ td (off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗ Typ. Max. − − − − 17 23 25 ±10 − 1 2.5 25 35 37 − − − − − − − − − − − 600 200 120 8 10 37 11 8.4 1.9 3.3 Unit µA V µA V Conditions S pF pF pF ns ns ns ns nC nC nC VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=7.0A, VGS=10V ID=7.0A, VGS=4.5V ID=7.0A, VGS=4V ID=7.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.5A, VDD 15V VGS=10V RL=4.29Ω RG=10Ω VDD 15V VGS=5V ID=7.0A Unit V Conditions IS=6.4A, VGS=0V mΩ e N co ew m m D e es n d ig e ns d Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ RDS (on) Min. − 30 − 1.0 − − − 5.0 − − − − − − − − − − fo r Parameter Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) zBody diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward voltage VSD ∗ Min. − Typ. − Max. 1.2 N ot R ∗Pulsed Symbol 20190527-Rev.C 2/5 SP8M10FRA SP8M10 Transistors P-ch zElectrical characteristics (Ta=25°C) ∗Pulsed Max. − − − − 40 57 65 ±10 − −1 −2.5 56 80 90 − − − − − − − − − − − 850 190 120 10 25 60 25 8.5 2.5 3.0 Unit µA V µA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −4.5A, VGS= −10V ID= −2.5A, VGS= −4.5V ID= −2.5A, VGS= −4.0V ID= −2.5A, VDS= −10V VDS= −10V VGS=0V f=1MHz ID= −2.5A, VDD −15V VGS= −10V RL=6.0Ω RG=10Ω VDD −15V VGS= −5V ID= −4.5A fo r Typ. e N co ew m m D e es n d ig e ns d Parameter Symbol Min. − Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS −30 IDSS Zero gate voltage drain current − Gate threshold voltage VGS (th) −1.0 − ∗ Static drain-source on-state RDS (on) − resistance − Yfs ∗ 3.5 Forward transfer admittance Ciss Input capacitance − Coss Output capacitance − Crss Reverse transfer capacitance − td (on) ∗ Turn-on delay time − tr ∗ Rise time − td (off) ∗ Turn-off delay time − tf ∗ Fall time − Qg ∗ Total gate charge − Qgs ∗ Gate-source charge − Qgd ∗ Gate-drain charge − zBody diode characteristics (Source-Drain) (Ta=25°C) Symbol VSD Min. − Typ. − Max. −1.2 Unit V Conditions IS=−1.6A, VGS=0V N ot R Parameter Forward voltage 20190527-Rev.C 3/5 SP8M10FRA SP8M10 Transistors N-ch zElectrical characteristic curves Ciss Coss 100 Crss 0.1 1 10 tf td (off) 100 tr 10 td (on) 1 0.01 100 0.1 1 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) VDS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 5 4 3 2 1 0 0 2 4 6 8 300 200 100 ID=7A ID=3.5A 150 100 50 0 0 GATE-SOURCE VOLTAGE : VGS (V) 2 4 6 8 10 12 14 16 14 16 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.1 0.01 0.0 0.5 GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Typical Transfer Characteristics 12 Fig.3 Dynamic Input Characteristics Ta=25°C Pulsed 250 10 TOTAL GATE CHARGE : Qg (nC) Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 10 6 e N co ew m m D e es n d ig e ns d DRAIN-SOURCE VOLTAGE : VDS (V) 100 1 Ta=25°C 9 VDD=15V ID=7A 8 RG=10Ω 7 Pulsed DRAIN CURRENT : ID (A) SOURCE CURRENT : Is (A) 10 0.01 1000 GATE-SOURCE VOLTAGE : VGS (V) 1000 10 Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed fo r 10000 Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 10000 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 100 10000 VGS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.1 1 10 1000 100 10000 VGS=4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.1 1 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) N STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) ot R Fig.6 Source Current vs. Source-Drain Voltage 1000 100 VGS=4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) 20190527-Rev.C 4/5 SP8M10FRA SP8M10 Transistors P-ch zElectrical characteristic curves Ciss Coss Crss 100 0.1 1 10 td (off) 100 td (on) 10 tr 1 0.01 100 0.1 DRAIN-SOURCE VOLTAGE : −VDS (V) 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 0.1 5 4 3 2 1 0 0 1 2 3 4 5 200 10 ID = −4.5A ID = −2.0A 100 50 0 0 2 GATE-SOURCE VOLTAGE : −VGS (V) 4 6 8 10 12 8 9 10 14 16 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.1 0.01 0.0 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : −VSD (V) GATE-SOURCE VOLTAGE : −VGS (V) Fig.4 Typical Transfer Characteristics 7 Fig.3 Dynamic Input Characteristics Ta=25°C Pulsed 150 6 TOTAL GATE CHARGE : Qg (nC) e N co ew m m D e es n d ig e ns d DRAIN CURRENT : −ID (A) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 6 Fig.2 Switching Characteristics VDS= −10V Pulsed 1 1 Ta=25°C VDD= −15V ID= −4.5A RG=10Ω Pulsed 7 DRAIN CURRENT : −ID (A) Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 tf SOURCE CURRENT : −IS (A) 10 0.01 1000 GATE-SOURCE VOLTAGE : −VGS (V) 1000 8 Ta=25°C VDD= −15V VGS= −10V RG=10Ω Pulsed fo r 10000 Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 10000 Fig.6 Source Current vs. Source-Drain Voltage 100 10 0.1 VGS= −10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 10 1000 100 10 0.1 VGS= −4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 10 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) N STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) ot R Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 100 10 0.1 VGS= −4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 10 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) 20190527-Rev.C 5/5 Notice Precaution on using ROHM Products 1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used. However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. 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Rev.004 Datasheet General Precaution 1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents. ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative. 3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001