SST3904T116

UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 zFeatures 1) BVCEO > 40V (IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. zDimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 SOT-323 SST3904 zPackage, marking and packaging specifications Part No. UMT3904 Packaging type UMT3 R1A SST3 R1A SMT3 R1A T106 T116 T146 3000 3000 3000 Marking Code Basic ordering unit (pieces) SST3904 MMST3904 (1) Emitter (2) Base (3) Collector ROHM : SST3 MMST3904 zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit VCBO VCEO 60 40 6 0.2 V V V A 0.2 W 0.35 150 −55 to +150 °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation UMT3904, SST3904, MMST3904 SST3904, MMST3904 Junction temperature Storage temperature VEBO IC PC Tj Tstg (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 ∗ W ∗ When mounted on a 7 x 5 x 0.6 mm ceramic board. zElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Min. Typ. Max. Unit BVCBO BVCEO 60 40 6 - 50 50 V V BVEBO ICES IEBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) DC current transfer ratio hFE - - V nA nA - - 0.2 0.65 - - 0.3 0.85 0.95 40 - - 70 100 - 300 - - 4 MHz pF ~ V V Conditions IC = 10µA IC = 1mA IE = 10µA VCB = 30V VEB = 3V IC/IB = 10mA/1mA IC/IB = 50mA/5mA IC/IB = 10mA/1mA IC/IB = 50mA/5mA VCE = 1V , IC = 0.1mA VCE = 1V , IC = 1mA VCE = 1V , IC = 10mA VCE = 1V , IC = 50mA VCE = 1V , IC = 100mA VCE = 20V , IE = −10mA, f = 100MHz VCB = 10V , f = 100kHz Transition frequency Collector output capacitance Cob 60 30 300 - Emitter input capacitance Cib - - 8 pF VEB = 0.5V , f = 100kHz td - - 35 ns tr tstg - - 35 200 ns ns VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA tf - - 50 ns Delay time Rise time Storage time Fall time fT VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA Rev.B 1/4 UMT3904 / SST3904 / MMST3904 Transistors COLLECTOR CURRENT : IC (mA) 10 40 Ta=25°C 35 8 30 25 6 20 4 15 10 2 5.0 IB=0µA 0 0 20 10 COLLECTOR-EMITTER VOLTAGE : VCE (V) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves Ta=25°C IC / IB=10 0.3 0.2 0.1 0 0.1 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.2 Collector-emitter saturation voltage vs. collector current Fig.1 Grounded emitter output characteristics 500 DC CURRENT GAIN : hFE Ta=25°C VCE=1V 3V 5V 10V 100 10 5 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.3 DC current gain vs. collector current ( Ι ) 500 VCE=5V DC CURRENT GAIN : hFE Ta=125°C Ta=25°C 100 Ta=−55°C 10 5 0.1 1.0 10 100 COLLECTOR CURRENT : IC (mA) 1000 Fig.4 DC current gain vs. collector current ( ΙΙ ) Rev.B 2/4 UMT3904 / SST3904 / MMST3904 500 BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) Transistors AC CURRENT GAIN : hFE Ta=25°C VCE=5V f=1kHz 100 10 5 0.01 0.1 1.0 COLLECTOR CURRENT : IC (mA) 10 100 1.6 1.2 0.8 0.4 0 0.1 0.4 10 1.0 1.0 10 100 COLLECTOR CURRENT : IC (mA) 1000 RISE TIME : t r (ns) 10 COLLECTOR CURRENT : IC (mA) 40V 100 1000 10 100 COLLECTOR CURRENT : IC (mA) Fig.9 Rise time vs. collector current Fig.8 Turn-on time vs. collector current 50 Ta=25°C VCC=40V IC/IB=10 100 15V VCC=40V 10 1.0 100 FALL TIME : tf (ns) Ta=25°C IC=10IB1=10IB2 Ta=25°C IC / IB=10 100 15V VCC=3V Fig.7 Grounded emitter propagation characteristics STORAGE TIME : ts (ns) 40V 100 0.8 1000 Ta=25°C IC / IB=10 Ta=25°C f=1MHz CAPACITANCE (pF) 1.2 0 0.1 1000 TURN ON TIME : ton (ns) BASE EMITTER VOLTAGE : VBE(ON) (V) Ta=25°C VCE=5V 1.6 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.6 Base-emitter saturation voltage vs. collector current Fig.5 AC current gain vs. collector current 1.8 Ta=25°C IC / IB=10 1.8 10 Cib Cob VCE=3V 1 10 1.0 10 COLLECTOR CURRENT : IC (mA) 100 Fig.10 Storage time vs. collector current 10 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.11 Fall time vs. collector current 0.5 0.1 1.0 10 REVERSE BIAS VOLTAGE (V) 100 Fig.12 Input / output capacitance vs. voltage Rev.B 3/4 UMT3904 / SST3904 / MMST3904 Transistors 300 MHz 10 1.0 300MHz 200MHz 0.1 0.1 100MHz 1.0 10 100 COLLECTOR CURRENT : IC (mA) 10µ 10 1.0 10 COLLECTOR CURRENT : IC (mA) Fig.14 Gain bandwidth product vs. collector current SOURCE RESISTANCE : RS (Ω) B dB 10 Fig.17 Noise characteristics ( ΙΙ ) Ta=25°C IC=1mA hie=3.84kΩ hfe=141 −5 hre=5.03 × 10 hoe=5.58µS 1 10 100 COLLECTOR CURRENT : IC (mA) 0.1 0.1 100k Ta=25°C VCE=5V f=1kHz NF =1 .0 dB 1k 3. 0d B 100 0.01 0.1 1 COLLECTOR CURRENT : IC (mA) 10 Fig.18 Noise characteristics ( ΙΙΙ ) 12 Ta=25°C VCE=5V IC=100µA RS=10kΩ 10 NOISE FIGURE : NF (dB) 0d dB 1 dB 12 .0 hre hfe B 8d B 5d B 3d B 0d 1. =3 5. hie B 0d B 5. 0d 8. dB 12 B 8d B 5d B 3d NF B 0.1 1 COLLECTOR CURRENT : IC (mA) Ta=25°C VCE=5V f=10Hz 10k 1k 100 0.01 0d B 100k .0 3. 0d Fig.16 Noise characteristics ( Ι ) =1 B 25 50 75 100 125 150 ANBIENT TEMPERATURE : Ta (°C) B 5d NF 1k hoe 10 10k B 8. 0 B 0d 0d 0.1n dB B 8d 1n 3d 1. VCE=5V f=270Hz Fig.15 h parameter vs. collector current Ta=25°C VCE=5V f=10kHz 10k 10n 100 12 1µ 100n SOURCE RESISTANCE : RS (Ω) 100 100k VCB=25V 100 Ta=25°C VCE=5V 5. COLLECTOR CUTOFF CURRENT : ICBO (A) Fig.13 Gain bandwidth product 1000 h PARAMETER NORMALIZED TO 1mA 400MHz 500MHz SOURCE RESISTANCE : RS (Ω) Ta=25°C 100MHz 200MHz CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) COLLECTOR-EMITTER VOLTAGE : VCE (V) 100 8 6 4 2 B 0d 8. 100 0.01 0.1 1 COLLECTOR CURRENT : IC (mA) 10 Fig.19 Noise characteristics ( ΙV ) 0 10 100 1k FREQUENCY : f (Hz) 10k 100k Fig.20 Noise vs. collector current Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0