SST4403

SST4403 / MMST4403 Transistors PNP Medium Power Transistor (Switching) SST4403 / MMST4403 Features 1) BVCEO = −40V (Min.) ; at IC= −1mA 2) Complements the SST4401 / MMST4401 Dimensions (Unit : mm) SST4403 Package, marking, and packaging specifications ROHM : SST3 Part No. Packaging type Marking Code Basic ordering unit (pieces) SST4403 SST3 R2T T116 3000 MMST4403 SMT3 R2T T146 3000 (1) Emitter (2) Base (3) Collector MMST4403 Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits −40 −40 −6 −0.6 0.2 PC 0.35 Tj Junction temperature Tstg Storage temperature ∗ Mounted on a 7+ 5+ 0.6mm CERAMIC SUBSTRATE 150 −55 to +150 W ˚C ˚C Unit V V V A W ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector Collector power dissipation Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) Min. −40 −40 −5 − − − − −0.75 − 30 60 DC current transfer ratio hFE 100 100 20 Transition frequency Collector output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time fT Cob Cib td tr tstg tf 200 − − − − − − Typ. − − − − − − − − − − − − − − − − − − − − − Max. − − − −0.1 −0.1 −0.4 −0.75 −0.95 −1.3 − − − 300 − − 8.5 30 15 20 225 30 − Unit V V V µA µA V V IC= −100µA IC= −1mA IE= −100µA VCB= −35V VEB= −5V IC/IB= −150mA/ −15mA IC/IB= −500mA/ −50mA IC/IB= −150mA/ −15mA IC/IB= −500mA/ −50mA VCE= −1V, IC= −0.1mA VCE= −1V, IC= −1mA VCE= −1V, IC= −10mA VCE= −1V, IC= −150mA VCE= −2V, IC= −500mA MHz pF pF ns ns ns ns VCE= −10V, IE=20mA, f=100MHz VCB= −10V, f=100kHz VEB= −0.5V, f=100kHz VCC= −30V, VEB(OFF)= −2V, IC= −150mA, IB1= −15mA VCC= −30V, VEB(OFF)= −2V, IC= −150mA, IB1= −15mA VCC= −30V, IC= −150mA, IB1= −IB2= −15mA VCC= −30V, IC= −150mA, IB1= −IB2= −15mA Conditions Rev.C 1/3 SST4403 / MMST4403 Transistors Electrical characteristic curves 100 Ta=25˚C COLLECTOR CURRENT : IC (mA) 1000 600 Ta=25˚C 500 400 50 300 200 100 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE (V) 1B=0µA DC CURRENT GAIN : hFE VCE=10V 100 1V 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.1 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current ( I ) BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Ta=25˚C IC / IB=10 1000 VCE=10V DC CURRENT GAIN : hFE Ta=125˚C Ta=25˚C 100 Ta= −55˚C 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.2 Base-emitter saturation voltage vs. collector current Fig.4 DC current gain vs. collector current ( II ) 1000 COLLECTOR-EMITTER SATURATION VOLTAGE : VCE (sat) (V) Ta=25˚C VCE=10V f=1kHz Ta=25˚C IC / IB=10 0.3 AC CURRENT GAIN : hFE 0.2 100 0.1 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.5 AC current gain vs. collector current Fig.6 Collector-emitter saturation voltage vs. collector current Rev.C 2/3 SST4403 / MMST4403 Transistors CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) BASE-EMITTER ON VOLTAGE : VBE(on) (V) COLLECTOR-EMITTER VOLTAGE : VCE(V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Ta=25˚C VCE=10V 1000 100 100MHz 300MHz 10 200MHz Ta=25˚C VCE=10V Ta=25˚C 100 250MHz 1 200MHz 0.1 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.7 Grounded emitter propagation characteristics Fig.8 Gain bandwidth product vs. collector current Fig.9 Gain bandwidth product 100 Ta=25˚C f=1MHz 1000 Ta=25˚C IC / IB=10 500 Ta=25˚C VCC=30V IC / IB=10 TURN ON TIME : ton (ns) CAPACITANCE (pF) 10 Cob Cib RISE TIME : tr (ns) 100 100 VCC=30V 10V 10 1 0.1 10 1 10 REVERSE BIAS VOLTAGE (V) 100 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 5 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 Fig.10 Input /output capacitance vs. voltage Fig.11 Turn-on time vs.collector current Fig.12 Rise time vs. collector current 1000 Ta=25˚C VCC=30V IC=10IB1=10IB2 1000 Ta=25˚C VCC=30V IC=10IB1=10IB2 STORAGE TIME : ts (ns) 100 10 FALL TIME : tf (ns) 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 100 10 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 Fig.13 Storage time vs. collector current Fig.14 Fall time vs. collector current Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0