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STZ5.6N_11

STZ5.6N_11

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    STZ5.6N_11 - Zener diode - Rohm

  • 数据手册
  • 价格&库存
STZ5.6N_11 数据手册
Data Sheet Zener diode STZ5.6N Applications Voltage regulation (Anode common twin type) Dimensions (Unit : mm) Land size figure (Unit : mm) 0.8MIN. 2.9±0.2 各リー ドと も +0.1 Each lead has same dimension 同 寸法 0.4  -0.05 (3) 2.8±0.2 Features 1) Small mold type. (SMD3) 2) High reliability. 1.0MIN. 0.15-0.06 +0.1 0.95 1.6-0.1 +0.2 0~0.1 0.3~0.6 1.9 SMD3 (2) (1) 0.95 1.9± 0.2 0.8± 0.1 0.2 1.1± 0.2 1.1 0.1 0.01 Construction Silicon epitaxial planar 0.95 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1       0 1.75±0.1 0.3±0.1 3.5±0.05 8.0±0.2 3.2±0.1 3.2±0.1 4.0±0.1 φ1.05MIN 0~0.5 5.5±0.2 3.2±0.1 1.35±0.1 Absolute maximum ratings(Ta=25°C) Parameter Symbol Power dissipation (*1) P Junction temperature Tj Storage temperature Tstg (*1) Total of 2 elements Limits 200 150 55 to 150 Unit mW °C °C Electrical characteristics (Ta=25°C) Parameter Symbol VZ Zener voltage Reverse current Dynamic impedance Rising operation resistance IR ZZ ZZk Min. 5.31 - Typ. - Max. 5.92 1.00 60 200 Unit V μA Ω Ω IZ=5mA VR=2.5V IZ=5mA IZ=0.5mA Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.03 - Rev.C 2.4 STZ5.6N Data Sheet 10 Ta=25℃ Ta=125℃ 1000 Ta=150℃ Ta=125℃ 100 f=1MHz REVERSE CURRENT:IR (nA) 100 10 1 0.1 0.01 0.001 1 0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5 3 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ Ta=75℃ ZENER CURRENT:Iz(mA) 1 Ta=-25℃ Ta=75℃ 0.1 Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 0.01 Ta=-25℃ 0.001 4 4.5 5 5.5 6 6.5 7 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 0.0001 5.8 5.7 5.6 5.5 5.4 5.3 Vz DISRESION MAP AVE:5.659V 1 20 CAPACITANCE BETWEENTERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) ZENER VOLTAGE:Vz(V) Ta=25℃ IZ=5mA n=30pcs 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 AVE:0.080nA Ta=25℃ VR=2.5V n=30pcs 19 18 17 16 15 14 13 12 11 10 Ct DISRESION MAP AVE:15.64pF Ta=25℃ f=1MHz VR=0V n=10pcs IR DISRESION MAP TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 1000 Rth(j-a) DYNAMIC IMPEDANCE:Zz(Ω) 100 100 Rth(j-c) Mounted on epoxy board 10 10 IM=10mA IF=100mA 1ms time 300us 1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS 10 1 0.001 0.01 0.1 TIME:t(s) 10 1 100 Rth-t CHARACTERISTICS 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.03 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
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