TT8J1

1.5V Drive Pch+Pch MOSFET TT8J1 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5V) (1) (2) (3) (4) Abbreviated symbol : J01 Applications Switching Each lead has same dimensions Packaging specifications Package Type TT8J1 Code Basic ordering unit (pieces) Taping TR 3000 Inner circuit (8) (7) (6) (5) ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 ∗2 PD Tch Tstg Limits −12 ±10 ±2.5 ±10 −0.8 −10 1.25 1.0 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol ∗ Limits 100 125 Unit °C / W / TOTAL °C / W / ELEMENT Rth(ch-a) www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.01 - Rev.A TT8J1 Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −12 IDSS Zero gate voltage drain current − Gate threshold voltage VGS (th) −0.3 − Static drain-source on-state − ∗ RDS (on) resistance − − Forward transfer admittance Yfs ∗ 3.5 Input capacitance − Ciss Output capacitance Coss − Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ ∗Pulsed Data Sheet Typ. − − − − 44 60 81 110 − 1350 130 125 9 35 130 85 13 2.5 2.0 Max. ±10 − −1 −1.0 61 84 121 220 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −2.5A, VGS= −4.5V ID= −1.2A, VGS= −2.5V ID= −1.2A, VGS= −1.8V ID= −0.5A, VGS= −1.5V VDS= −6V, ID= −2.5A VDS= −6V VGS=0V f=1MHz VDD −6V VGS= −4.5V ID= −1.2A RL 5Ω RG=10Ω VDD −6V VGS= −4.5V ID= −2.5A RL 2.4Ω / RG=10Ω Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗ Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −2.5A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.01 - Rev.A TT8J1 Electrical characteristic curves 10 Ta=25℃ Pulsed Data Sheet 10 8 6 4 2 VGS= -1.2V VGS= -10V VGS= -4.5V VGS= -2.5V 10 DRAIN CURRENT : -ID [A] Ta=25℃ Pulsed VGS= -1.8V DRAIN CURRENT -ID[A] 8 DRAIN CURRENT -ID[A] 6 VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -2.5V VGS= -2.0V VGS= -1.6V VDS= -6V Pulsed 1 4 VGS= -1.5V Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 2 VGS= -1.2V 0 0 0.2 0.4 0.6 0.8 1 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE -VDS[V] DRAIN-SOURCE VOLTAGE -VDS[V] Fig.2 Typical Output Characteristics(Ⅱ) 0.01 0 0.5 1 1.5 GATE-SOURCE VOLTAGE : -VGS [V] Fig.3 Typical Transfer Characteristics Fig.1 Typical Output Characteristics(Ⅰ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] Ta=25℃ Pulsed 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] 100 . 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] VGS= -4.5V Pulsed 1000 VGS= -2.5V Pulsed 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 0.1 1 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 0.1 1 DRAIN CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 10 10 0.1 1 DRAIN CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 10 DRAIN CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] REVERSE DRAIN CURRENT : -Is [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] VGS= -1.8V Pulsed 1000 VGS= -1.5V Pulsed 10 VGS=0V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 10 0.1 1 DRAIN CURRENT : -ID [A] 10 10 0.1 1 DRAIN CURRENT : -ID [A] 10 0.01 0 0.2 0.4 0.6 0.8 1 1.2 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.01 - Rev.A TT8J1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] GATE-SOURCE VOLTAGE : -VGS [V] Ta=25℃ Pulsed Data Sheet FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 200 100 5 4 3 2 1 0 VDS= -6V Pulsed 10 150 ID= -2.5A Ta=25℃ VDD= -6V ID= -2.5A RG=10Ω Pulsed 100 ID= -1.2A 1 50 Ta= - 25°C Ta= 25°C Ta= 75°C Ta= 125°C 0.1 1 10 0 0 5 GATE-SOURCE VOLTAGE : -VGS [V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10 0 0 2 4 6 8 10 12 14 DRAIN CURRENT : -ID [A] Fig.11 Forward Transfer Admittance vs. Drain Current TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 1000 td(off) tf 1000 Ciss SWITCHING TIME : t [ns] CAPACITANCE : C [pF] Ta=25℃ VDD= -6V VGS=-4.5V RG=10Ω Pulsed 100 100 Crss Coss Ta=25℃ f=1MHz VGS=0V 10 td(on) tr 10 0.01 0.1 1 10 1 0.01 0.1 1 10 DRAIN CURRENT : -ID [A] Fig.14 Switching　Characteristics 100 DRAIN-SOURCE VOLTAGE : -VDS [V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.01 - Rev.A TT8J1 Measurement circuits Data Sheet Pulse width ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) RG D.U.T. VDD VDS VGS Qgs Qg Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 5/5 2009.01 - Rev.A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2009 ROHM Co.,Ltd. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster @ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix-Rev4.0