TT8J11

Data Sheet 1.5V Drive Pch + Pch MOSFET TT8J11  Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive(1.5V drive). (1) (2) (3) (4) Abbreviated symbol : J11  Application Switching Inner circuit (8) (7) (6) (5)  Packaging specifications Type TT8J11 Package Code Basic ordering unit (pieces) Taping TCR 3000  (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 ∗1 (1) (2) (3) (4)  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Limits 12 0 to 8 3.5 Unit V V A A A A W / TOTAL W / ELEMENT C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP Is Isp PD Tch Tstg *1 *1 *2 12 0.8 12 1.25 1 150 55 to 150  Thermal resistance Parameter Channel to Ambient * Mounted on a ceramic board. Symbol Rth (ch-a) * Limits 100 125 Unit ˚C / W /TOTAL ˚C / W /ELEMENT www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.05 - Rev.A TT8J11  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Data Sheet Symbol IGSS IDSS VGS (th) Min. 12 0.3 4 - Typ. 31 43 60 80 2600 200 190 15 30 170 60 22 3.9 3.1 Max. 10 10 1.0 43 60 90 160 - Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, V GS=0V VDS=12V, VGS=0V VDS=6V, ID=1mA ID=3.5A, VGS=4.5V ID=1.7A, VGS=2.5V ID=1.7A, VGS=1.8V ID=0.7A, VGS=1.5V ID=3.5A, VDS=6V VDS=6V VGS=0V f=1MHz ID=1.7A, VDD 6V VGS=4.5V RL=3.5 RG=10 ID=3.5A VDD 6V VGS=4.5V Drain-source breakdown voltage V (BR)DSS * RDS (on) m l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * S pF pF pF ns ns ns ns nC nC nC Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=3.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.05 - Rev.A TT8J11 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 3.5 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 3.5 Ta=25°C pulsed Ta=25°C pulsed VGS=-4.5V VGS=-4.0V VGS=-2.8V 3 3 2.5 Drain Current : -ID [A] 2 VGS=-4.0V VGS=-2.8V Drain Current : -ID [A] VGS=-4.5V 2.5 2 VGS=-1.8V VGS=-1.5V 1.5 VGS=-1.8V 1 VGS=-1.5V 1.5 1 VGS=-1.2V 0.5 VGS=-1.2V 0 0 0.2 0.4 0.6 0.8 1 0.5 0 0 2 4 6 8 10 Drain-Source Voltage : -VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current Drain-Source Voltage : -VDS [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta=25°C pulsed VGS=-1.5V VGS=-1.8V VGS=-2.5V VGS=-4.5V 1000 VGS=-4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] 100 100 10 10 1 0.01 0.1 Drain Current : -ID [A] 1 10 1 0.01 0.1 1 Drain Current : -ID [A] 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-2.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1000 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 100 Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=-1.8V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 10 1 0.01 0.1 1 10 1 0.01 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.05 - Rev.A TT8J11 　 Data Sheet Fig.7 Static Drain-Source On-State Resistance vs. Drain Current Fig.8 Forward Transfer Admittance vs. Drain Current 100 1000 VGS=-1.5V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C VDS=-6V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Forward Transfer Admittance Yfs [S] 100 10 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.01 0.1 1 10 0.1 0.01 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] Fig.10 Source Current vs. Source-Drain Voltage 10 Fig.9 Typical Transfer Characteristics 10 VDS=-6V pulsed VGS=0V pulsed Source Current : -Is [A] 1 Drain Currnt : -ID [A] 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.01 0.0 0.5 1.0 1.5 2.0 Gate-Source Voltage : -VGS [V] Source-Drain Voltage : -VSD [V] Fig.11 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 200 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] ID=-0.7A 150 ID=-3.5A Switching Time : t [ns] 100 1000 Fig.12 Switching Characteristics td(off) tf 100 tr 10 VDD≒-6V VGS=-4.5V RG=10Ω Ta=25°C Pulsed 1 0.01 0.1 1 10 td(on) 50 0 0 2 4 6 8 Gate-Source Voltage : -VGS [V] Drain Current :- ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.05 - Rev.A TT8J11 　 Data Sheet Fig.13 Dynamic Input Characteristics 100000 Ta=25°C VDD=-6V ID=-3.5A Pulsed 10000 Capacitance : C [pF] Fig.14 Typical Capacitance vs. Drain-Source Voltage 5 Ta=25°C f=1MHz VGS=0V 4 Gate-Source Voltage : -VGS [V] 3 1000 Ciss Coss 2 1 100 Crss 0 0 5 10 15 20 25 10 0.01 0.1 1 10 100 Drain-Source Voltage : -VDS [V] Total Gate Charge : -Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.05 - Rev.A TT8J11  Measurement circuits 　 Data Sheet Pulse Width VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ES protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A