TT8J13

Data Sheet 1.5V Drive Pch + Pch MOSFET TT8J13  Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive(1.5V drive). (1) (2) (3) (4) Abbreviated symbol : J13  Application Switching Inner circuit (8) (7) (6) (5)  Packaging specifications Type TT8J13 Package Code Basic ordering unit (pieces) Taping TCR 3000  (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 ∗1 (1) (2) (3) (4)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Symbol VDSS VGSS Limits 12 0 to 8 2.5 Unit V V A A A A W / TOTAL W / ELEMENT C C Continuous Pulsed Continuous Pulsed ID IDP Is Isp PD Tch Tstg *1 5 0.8 5 1.25 1 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient * Mounted on a ceramic board. Symbol Rth (ch-a) * Limits 100 125 Unit ˚C / W /TOTAL ˚C / W /ELEMENT www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A TT8J13  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Data Sheet Symbol IGSS IDSS VGS (th) Min. 12 0.3 3.5 - Typ. 44 55 75 90 2000 130 120 11 40 160 60 16 2.4 2.2 Max. 10 10 1.0 62 77 110 180 - Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=12V, VGS=0V VDS=6V, ID=1mA ID=2.5A, VGS=4.5V ID=1.2A, VGS=2.5V ID=1.2A, VGS=1.8V ID=0.5A, VGS=1.5V ID=2.5A, VDS=6V VDS=6V VGS=0V f=1MHz ID=1.2A, VDD 6V VGS=4.5V RL=5 RG=10 ID=2.5A VDD 6V VGS=4.5V Drain-source breakdown voltage V (BR)DSS RDS (on) m l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * S pF pF pF ns ns ns ns nC nC nC Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=2.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A TT8J13 Electrical characteristic curves (Ta=25C) Fig.1 Typical output characteristics(Ⅰ) 2.5 VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V Ta=25°C pulsed 　 Data Sheet Fig.2 Typical output characteristics(Ⅱ) 2.5 Ta=25°C pulsed 2 DRAIN CURRENT : -ID[A] 2 DRAIN CURRENT : -ID[A] VGS= -1.2V 1.5 VGS= -1.2V 1 1.5 VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V 1 0.5 VGS= -1.0V 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : -VDS[V] 0.5 VGS= -1.0V 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.3 Typical Transfer Characteristics 10 VDS= -6V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1 DRAIN CURRENT : -ID[A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C pulsed VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 0.1 0.01 0.001 0 0.5 1 1.5 GATE-SOURCE VOLTAGE : -VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 VGS= -4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 VGS= -2.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.03 - Rev.A TT8J13 　 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 1000 VGS= -1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C VGS= -1.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 Data Sheet 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 Fig.9 Forward Transfer Admittance vs. Drain Current 100 FORWARD TRANSFER ADMITTANCE : |Yfs| VDS= -6V Pulsed 10 VGS=0V Pulsed REVERSE DRAIN CURRENT : -Is [A] 1 Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 10 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 150 Ta=25°C pulsed SWITCHING TIME : t [ns] ID= -1.25A 100 ID= -2.5A 10 0.001 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.12 Switching Characteristics 1000 td(off) Ta=25°C VDD= -6V VGS=-4.5V RG=10W Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 tf 10 50 td(on) tr 0 0 2 4 6 8 GATE-SOURCE VOLTAGE : -VGS[V] 1 0.01 0.1 1 10 100 DRAIN-CURRENT : -ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.03 - Rev.A TT8J13 　 Fig.14 Typical Capacitance vs. Drain-Source Voltage 10000 Ciss Data Sheet Fig.13 Dynamic Input Characteristics 5 GATE-SOURCE VOLTAGE : -VGS [V] 4 CAPACITANCE : C [pF] 1000 3 2 Ta=25°C VDD= -6V ID= -2.5A Pulsed 100 Coss Crss Ta=25°C f=1MHz VGS=0V 1 10 100 1 0 0 5 10 15 20 TOTAL GATE CHARGE : Qg [nC] 10 0.01 0.1 DRAIN-SOURCE VOLTAGE : -VDS[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.03 - Rev.A TT8J13  Measurement circuits 　 Data Sheet Pulse Width VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A