4V Drive Pch MOSFET
TT8J2
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
Features 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (4V)
(1)
(2)
(3)
(4)
Abbreviated symbol : J02
Applications Switching
Each lead has same dimensions
Packaging specifications
Package Type TT8J2 Code Basic ordering unit (pieces) Taping TR 3000
Inner circuit
(8) (7) (6) (5)
∗2
∗2
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1
∗2
PD Tch Tstg
Limits −30 ±20 ±2.5 ±10 −0.8 −10 1.25 1.0 150 −55 to +150
Unit V V A A A A W / TOTAL W / ELEMENT °C °C
Thermal resistance
Parameter Channel to ambient
∗ Mounted on a ceramic board
Symbol
∗
Limits 100 125
Unit °C / W / TOTAL °C / W / ELEMENT
Rth(ch-a)
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2009.02 - Rev.A
TT8J2
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state ∗ − RDS (on) resistance − Forward transfer admittance Yfs ∗ 1.8 Input capacitance Ciss − Output capacitance Coss − Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗
∗Pulsed
Data Sheet
Typ. − − − − 60 95 115 − 460 65 40 7 20 35 14 4.8 1.8 1.2
Max. ±10 − −1 −2.5 84 130 160 − − − − − − − − − − −
Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −2.5A, VGS= −10V ID= −1.2A, VGS= −4.5V ID= −1.2A, VGS= −4V VDS= −10V, ID= −2.5A VDS= −10V VGS=0V f=1MHz VDD −15V VGS= −10V ID= −1.2A RL 12.5Ω RG=10Ω VDD −15V VGS= −5V ID= −2.5A RL 6Ω / RG=10Ω
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter Forward voltage
∗ Pulsed
Symbol VSD ∗
Min. −
Typ. −
Max. −1.2
Unit V
Conditions IS= −2.5A, VGS=0V
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2/5
2009.02 - Rev.A
TT8J2
Electrical characteristic curves
10 8 6 4 VGS= -3.4V 2 0 0 0.2 0.4 0.6 0.8 1 VGS= -3.0V Ta=25°C Pulsed DRAIN CURRENT : -ID[A] VGS= -10V VGS= -6.0V VGS= -4.5V VGS= -4.0V 10 8 6 4 2 0 0 2 4 6 8 10 VGS= -3.0V
Data Sheet
DRAIN CURRENT : -ID[A]
DRAIN CURRENT : -ID[A]
VGS= -10V VGS= -4.5V VGS= -4.0V
Ta=25°C Pulsed VGS= -3.4V
10
VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
1
0.1
0.01
VGS= -2.6V
0.001 0 1 2 3 4
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ )
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics(Ⅱ )
GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω]
Ta=25°C Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω]
1000
1000 VGS= -10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
1000
VGS= -4.0V VGS= -4.5V VGS= -10V
VGS= -4.5V Pulsed
100
100
100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ ) 10
10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ ) 10
10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ ) 10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] VGS= -4.0V Pulsed
10
REVERSE DRAIN CURRENT : -Is [A]
VDS= -10V Pulsed
10 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ ) 10
1
Ta= -25°C Ta=25°C Ta=75°C Ta=125°C
0.1
0.1 0.01
0.01 0 0.5 1 1.5
0.1
1
10
DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current
SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
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2009.02 - Rev.A
TT8J2
500 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 400 300 200 100 0 0 5 10 15 ID= -2.5A 1000 SWITCHING TIME : t [ns] td(off) 100 tf 10 GATE-SOURCE VOLTAGE : -VGS [V] 8 6 4 2 0 0 2 4 6
Data Sheet
Ta=25°C Pulsed
Ta=25°C VDD= -15V VGS= -10V RG=10Ω Pulsed
10
ID= -1.2A 1 0.01
tr
td(on) 0.1 1 10
Ta=25°C VDD= -15V ID= -2.5A RG=10Ω Pulsed 8 10
GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics
10000 Ta=25°C f=1MHz VGS=0V 1000
CAPACITANCE : C [pF]
Ciss
100 Coss
Crss 10 0.01 0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage
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4/5
2009.02 - Rev.A
TT8J2
Measurement circuits
Pulse width
VGS ID RL D.U.T. RG VDD VDS
Data Sheet
VGS
10% 50% 10%
90%
50% 10% 90%
VDS
90% td(on) ton tr td(off) toff
tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
VGS ID RL IG(Const.) RG D.U.T. VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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5/5
2009.02 - Rev.A
Appendix
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
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Appendix-Rev4.1
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