1.5V Drive Nch MOSFET
TT8K1
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TSST8
(8)
(7)
(6)
(5)
Features 1) Low On-resistance. 2) High power package. 3) 1.5V drive.
(1)
(2)
(3)
(4)
Abbreviated symbol : K01
Application Switching
Packaging specifications Type TT8K1 Package Code Basic ordering unit (pieces) Taping TR 3000
Inner circuit
(8) (7) (6) (5)
Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
∗2
∗2
∗1 (1) (2) (3)
∗1 (4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Symbol VDSS VGSS
Limits 20 10 2.5
Unit V V A A A A W / TOTAL W / ELEMENT C C
Continuous Pulsed Continuous Pulsed
ID IDP Is Isp PD Tch Tstg
*1
10 0.8 10 1.25 1.0 150 55 to +150
*1 *2
Thermal resistance Parameter Channel to Ambient
*Mounted on a ceramic board.
Symbol Rth (ch-a)
*
Limits 100 125
Unit °C / W /TOTAL °C / W /ELEMENT
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.07 - Rev.A
TT8K1
Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Symbol IGSS IDSS VGS (th) * RDS (on) Min. 20 0.3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
Data Sheet
Typ. 52 65 85 100 260 65 35 9 17 28 17 3.6 0.7 0.6
Max. 10 1 1 72 90 120 140 -
Unit A V A V
Conditions VGS=10V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA ID=2.5A, VGS=4.5V ID=2.5A, VGS=2.5V ID=1.2A, VGS=1.8V ID=0.5A, VGS=1.5V ID=2.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1.2A, VDD 10V VGS=4.5V RL 8.3 RG=10 ID=2.5A, VDD 10V VGS=4.5V RL 4 RG=10
Drain-source breakdown voltage V (BR)DSS
m
l Yfs l* Ciss Coss Crss * td(on) * tr * td(off) * tf * Qg * Qgs * Qgd *
2.7 -
S pF pF pF ns ns ns ns nC nC nC
Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage
*Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=2.5A, VGS=0V
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.07- Rev.A
TT8K1
Electrical characteristic curves
Data Sheet
5 DRAIN CURRENT : ID[A] 4 3 2 1 VGS= 1.5V VGS= 4.5V
DRAIN CURRENT : ID[A]
4 3 2 1 0
VGS= 2.5V VGS= 2.0V VGS= 1.8V VGS= 1.2V VGS= 1.0V
VGS= 4.5V VGS= 2.5V VGS= 1.8V
DRAIN CURRENT : ID[A]
Ta=25°C Pulsed
5 Ta=25°C Pulsed
10
VDS= 10V Pulsed
1
VGS= 1.5V VGS= 1.2V VGS= 1.0V
0.1
0.01
Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C
0 0 0.2 0.4 0.6 0.8 1
0.001 0 2 4 6 8 10 0 0.5 1 1.5 2
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ)
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( Ⅱ)
GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
Ta= 25°C Pulsed
VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V
VGS= 4.5V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
1000
1000
1000
Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C
VGS= 2.5V Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C
100
100
100
10 0.01 0.1 1 10
10 0.01 0.1 1 10
10 0.01 0.1 1 10
DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ)
DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ)
DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ)
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
1000
VGS= 1.8V Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C
1000
VGS= 1.5V Pulsed
10
Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C
VDS= 10V Pulsed
100
100
1
Ta=25°C Ta=25°C Ta=75°C Ta=125°C
10 0.01 0.1 1 10
10 0.01 0.1 1 10
0.1 0.01 0.1 1 10
DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ)
DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ)
DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.07 - Rev.A
TT8K1
Data Sheet
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ]
10 SOURCE CURRENT : Is [A]
SWITCHING TIME : t [ns]
VGS=0V Pulsed
200
Ta=25°C Pulsed ID= 2.5A ID= 1.25A
1000 tf 100 td(off)
150
1
Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed
100
0.1
Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C
10
td(on)
50
t 0 0 5 10 1 0.01 0.1 1 10
0.01 0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage
DRAIN-CURRENT : ID[A] Fig.12 Switching Characteristics
GATE-SOURCE VOLTAGE : VGS [V]
5 4 3 2 1 0 0 1 2 3 CAPACITANCE : C [pF]
1000 Ta=25°C f=1MHz VGS=0V Ciss 100 Crss
Ta=25°C VDD=10V ID=2.5A RG=10Ω Pulsed 4 5
Coss 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage
TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.07 - Rev.A
TT8K1
Measurement circuits
Data Sheet
Pulse width
VGS
ID RL D.U.T.
VDS
VGS VDS
50% 10% 10%
90%
50% 10% 90%
RG
VDD
td(on) ton
90% tr td(off) toff
tf
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
VG
VGS
ID RL
VDS
Qg VGS Qgs Qgd
IG(Const.) RG
D.U.T. VDD
Charge
Fig.2-1 Gate charge measurement circuit
Fig.2-2 Gate Charge Waveform
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.07- Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved.
R1010A
很抱歉,暂时无法提供与“TT8K1”相匹配的价格&库存,您可以联系我们找货
免费人工找货