TT8K11

Data Sheet 4V Drive Nch + Nch MOSFET TT8K11  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low voltage drive(4V drive). 3) Small surface mount package(TSST8).  Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4)  Application Switching Abbreviated symbol : K11  Packaging specifications Type TT8K11 Package Code Basic ordering unit (pieces) Taping TCR 3000   Inner circuit (8) (7) (6) (5) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 (1) (2) (3) ∗1 (4)  Absolute maximum ratings (Ta = 25C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. 1 ESD PROTECTION DIODE 2 BODY DIODE Limits 30 20 3 Unit V V A A A A W / TOTAL W / ELEMENT C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP Is Isp PD Tch Tstg *1 12 0.8 12 1.25 1.0 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a) * Limits 100 125 Unit C / W/ TOTAL C / W/ ELEMENT www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A TT8K11  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on)* tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 2.0 - Typ. 51 67 78 140 55 28 5 13 20 3 2.5 0.8 0.6 Max. 10 1 2.5 71 94 109 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=30V, VGS=0V VDS=10V, ID=1A ID=3A, VGS=10V Drain-source breakdown voltage V(BR)DSS m  ID=3A, VGS=4.5V ID=3A, VGS=4V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=3A VDS=10V VGS=0V f=1MHz VDD 15V, I D=1.5A VGS=4.5V RL=10 RG=10 VDD 15V, I D=3A VGS=5V Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=3A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A TT8K11 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics ( Ⅰ) 3 VGS=2.8V VGS=3.0V Drain Current : ID [A] VGS=4.0V VGS=4.5V VGS=10.0V VGS=2.5V 1 Ta=25°C pulsed 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 3 VGS=2.5V VGS=10.0V VGS=4.5V Drain Current : ID [A] 2 VGS=4.0V VGS=3.0V VGS=2.8V Ta=25°C pulsed 2 1 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C VGS=4.0V VGS=4.5V VGS=10V 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.08 - Rev.A TT8K11 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 10 VDS=10V pulsed Fig.8 Typical Transfer Characteristics Forward Transfer Admittance Yfs [S] 10 Drain Currnt : ID [A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 0.01 0.01 0.001 0.001 0.01 0.1 Drain Current : ID [A] 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 10 VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 150 Ta=25°C pulsed ID=1.5A 100 ID=3.0A Source Current : Is [A] 1 0.1 50 0.01 0.0 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] 0 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Fig.11 Switching Characteristics 1000 VDD≒15V VGS=4.5V RG=10Ω Ta=25°C Pulsed 10 Ta=25°C VDD=15V ID=3A Pulsed Fig.12 Dynamic Input Characteristics 100 td(off) Gate-Source Voltage : VGS [V] tf Switching Time : t [ns] 8 6 4 10 td(on) 2 tr 1 0.01 0.1 1 10 Drain Current : ID [A] 0 0 1 2 3 4 5 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.08 - Rev.A TT8K11 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 1000 Ta=25°C f=1MHz VGS=0V 10 Drain Current : ID [ A ] Capacitance : C [pF] 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs 1 PW = 1ms PW = 10ms 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 100 Ciss Coss Crss 10 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] 0.01 DC Operation 100 Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=125°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A TT8K11  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A