1.5V Drive Nch + Pch MOSFET
TT8M1
Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive). Dimensions (Unit : mm)
TSST8
(8)
(7)
(6)
(5)
(1)
(2)
(3)
(4)
Abbreviated symbol :M01
Application Switching
Packaging specifications Type TT8M1 Package Taping Code TR Basic ordering unit (pieces) 3000
Inner circuit
Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Symbol VDSS VGSS
Limits Tr1 : N-ch Tr2 : P-ch 20 10 2.5 10 0.8 10 1.25 1 150 55 to +150 20 10 2.5 10 0.8 10
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
Unit V V A A A A W / TOTAL W / ELEMENT C C
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Continuous Pulsed Continuous Pulsed
ID IDP Is Isp PD Tch Tstg
*1
*1 *2
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2010.08 - Rev.A
TT8M1
Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
Data Sheet
Symbol IGSS IDSS VGS (th)
Min. 20 0.3 -
Typ. 52 65 85 100
Max. 10 1 1.0 72 90 120 140 -
Unit A V A V
Conditions VGS=10V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA ID=2.5A, VGS=4.5V ID=2.5A, VGS=2.5V ID=1.2A, VGS=1.8V ID=0.5A, VGS=1.5V VDS=10V, ID=2.5A VDS=10V VGS=0V f=1MHz ID=1.2A, VDD 10V VGS=4.5V RL 8.3 RG=10 ID=2.5A, VDD 10V VGS=4.5V,RL 4 RG=10
Drain-source breakdown voltage V (BR)DSS
* RDS (on)
m
l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd *
2.7 -
260 65 35 9 17 28 17 3.6 0.7 0.6
S pF pF pF ns ns ns ns nC nC nC
Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage
*Pulsed
Symbol VSD *
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=2.5A, VGS=0V
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2/8
2010.08 - Rev.A
TT8M1
Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
Data Sheet
Symbol IGSS IDSS VGS (th) * RDS (on)
Min. 20 0.3 -
Typ. 49 68 100 140 1270 100 90 9 30 120 85 12 2.5 2
Max. 10 1 1.0 68 95 150 280 -
Unit A V A V
Conditions VGS=10V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA ID=2.5A, VGS=4.5V ID=1.2A, VGS=2.5V ID=1.2A, VGS=1.8V ID=0.5A, VGS=1.5V VDS=10V, ID=2.5A VDS=10V VGS=0V f=1MHz ID=1.2A, VDD 10V VGS=4.5V RL 8.3 RG=10 ID=2.5A, VDD 10V VGS=4.5V,RL 4 RG=10
Drain-source breakdown voltage V (BR)DSS
m
l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd *
2.5 -
S pF pF pF ns ns ns ns nC nC nC
Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage
*Pulsed
Symbol VSD *
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=2.5A, VGS=0V
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2010.08 - Rev.A
TT8M1
Electrical characteristic curves (Ta = 25° C)
Data Sheet
5 DRAIN CURRENT : ID[A] 4 3 2 1 VGS= 1.5V VGS= 4.5V
DRAIN CURRENT : ID[A]
4 3 2 1 0
VGS= 2.5V VGS= 2.0V VGS= 1.8V VGS= 1.2V VGS= 1.0V
VGS= 4.5V VGS= 2.5V VGS= 1.8V
DRAIN CURRENT : ID[A]
Ta=25°C Pulsed
5 Ta=25°C Pulsed
10
VDS= 10V Pulsed
1
VGS= 1.5V VGS= 1.2V VGS= 1.0V
0.1
0.01
Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C
0 0 0.2 0.4 0.6 0.8 1
0.001 0 2 4 6 8 10 0 0.5 1 1.5 2
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ)
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( Ⅱ)
GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
Ta= 25°C Pulsed
VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V
VGS= 4.5V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
1000
1000
1000
Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C
VGS= 2.5V Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C
100
100
100
10 0.01 0.1 1 10
10 0.01 0.1 1 10
10 0.01 0.1 1 10
DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ)
DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ)
DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ)
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
1000
VGS= 1.8V Pulsed
Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C
1000
VGS= 1.5V Pulsed
10
Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C
VDS= 10V Pulsed
100
100
1
Ta= −25°C Ta=25°C Ta=75°C Ta=125°C
10 0.01 0.1 1 10
10 0.01 0.1 1 10
0.1 0.01 0.1 1 10
DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ)
DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ)
DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current
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2010.08 - Rev.A
TT8M1
Data Sheet
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ]
10 SOURCE CURRENT : Is [A]
SWITCHING TIME : t [ns]
VGS=0V Pulsed
200
Ta=25°C Pulsed ID= 2.5A ID= 1.25A
1000 tf 100 td(off)
150
1
Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed
100
0.1
Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C
10
td(on)
50
t 0 0 5 10 1 0.01 0.1 1 10
0.01 0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage
DRAIN-CURRENT : ID[A] Fig.12 Switching Characteristics
GATE-SOURCE VOLTAGE : VGS [V]
5 4 3 2 1 0 0 1 2 3 CAPACITANCE : C [pF]
1000 Ta=25°C f=1MHz VGS=0V Ciss 100 Crss
Ta=25°C VDD=10V ID=2.5A RG=10Ω Pulsed 4 5
Coss 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage
TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics
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2010.08 - Rev.A
TT8M1
Data Sheet
4 DRAIN CURRENT : -ID[A] VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V Ta=25°C Pulsed
4
VGS= -10V VGS= -1.4V VGS= 1.8V
10 DRAIN CURRENT : -ID[A] Ta=25°C Pulsed
VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
DRAIN CURRENT : -ID[A]
3
3
1
VGS= -1.3V 2 VGS= -1.5V 1 VGS= -1.1V 0 VGS= -1.2V
2
0.1
1
VGS= -1.3V
0.01
VGS= -1.1V 0 0 0.2 0.4 0.6 0.8 1 0 2 4
0.001 6 8 10 0 0.5 1 1.5
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics( Ⅰ)
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics( Ⅱ)
GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ]
1000
Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ]
VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ]
Ta=25°C Pulsed
1000
VGS= -4.5V Pulsed
1000
VGS= -2.5V Pulsed
Ta= -25°C Ta=25°C Ta=75°C Ta=125°C
100
100
100
10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain 10
10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain 10
10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ]
1000 VGS= -1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
1000 VGS= -1.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
100
VDS= -10V Pulsed
10
100
100
1
Ta= -25°C Ta=25°C Ta=75°C Ta=125°C
10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) 10
10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 10
0 0.1 1 DRAIN-CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 10
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2010.08 - Rev.A
TT8M1
Data Sheet
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ]
300 250 ID= -2.5A 200 150 100 50 0 0 2 4 6
REVERSE DRAIN CURRENT : -Is [A]
GATE-SOURCE VOLTAGE : -VGS [V]
Ta=25°C Pulsed
10
VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
5 4 3 2 1 0 0 2 4 6 8 Ta=25°C VDD= -10V ID= -2.5A RG=10Ω Pulsed 10 12 14
1
0.1
ID= -1.2A 8 10
0.01 0 0.2 0.4 0.6 0.8 1 1.2
GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage
SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage
TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics
10000 CAPACITANCE : C [pF]
10000
SWITCHING TIME : t [ns]
Ciss 1000 Coss Crss Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 10 100
1000
td(off) tf
Ta=25°C VDD= -10V VGS=-4.5V RG=10Ω Pulsed
100
100
10 tr 1 0.01 0.1 1 10 td(on)
10
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source
DRAIN-CURRENT : -ID[A] Fig.14 Switching Characteristics
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2010.08 - Rev.A
TT8M1
Measurement circuits
Pulse width
Data Sheet
VGS
ID RL D.U.T.
VDS
VGS VDS
50% 10% 10%
90%
50% 10% 90%
RG
VDD
td(on) ton
90% tr td(off) toff
tf
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
VG
VGS
ID RL
VDS
VGS Qgs
Qg
IG(Const.)
D.U.T. VDD
Qgd
Charge
Fig.2-1 Gate charge measurement circuit
Fig.2-2 Gate Charge Waveform
ID VGS RL D.U.T. RG VDD
VDS td(on) ton
Pulse width
VDS
VGS
10% 50% 10% 90% tr
90%
50% 10% 90%
td(off) toff
tf
Fig.3-1 Switching time measurement circuit
Fig.3-2 Switching waveforms
VG
ID VGS RL IG(Const.) RG D.U.T. VDD
VDS
VGS Qgs
Qg
Qgd
Charge
Fig.4-1 Gate charge measurement circuit
Fig.4-2 Gate charge waveform
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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8/8
2010.08 - Rev.A
Notice
Notes
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R1010A