TT8U1

1.5V Drive Pch +SBD MOSFET TT8U1 Structure Silicon P-channel MOSFET / schottky barrier diode Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5V) (1) (2) (3) (4) Abbreviated symbol : U01 Each lead has same dimensions Applications Switching Inner circuit Packaging specifications Package Type TT8U1 Code Basic ordering unit (pieces) Taping TR 3000 ∗1 (1) Anode (2) Anode (3) Source (4) Gate (5) Drain (6) Drain (7) Cathode (8) Cathode (8) (7) (6) (5) (1) (2) (3) (4) Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board ∗1 BODY DIODE Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗2 Limits −20 ±10 ±2.4 ±9.6 −0.8 −9.6 150 1.0 Unit V V A A A A °C W / ELEMENT Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation ∗1 60HZ / 1Cycle ∗2 Mounted on a ceramic board Symbol VRM VR IF IFSM ∗1 Tj PD ∗2 Limits 30 20 1.0 3.0 150 1.0 Unit V V A A °C W / ELEMENT Parameter Total power dissipation Range of Storage temperature ∗ Mounted on a ceramic board Symbol PD Tstg ∗ Limits 1.25 −55 to +150 Unit W / TOTAL °C www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.06 - Rev.A TT8U1 Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.3 − Static drain-source on-state − ∗ RDS (on) resistance − − Yfs ∗ 2.4 Forward transfer admittance Ciss − Input capacitance − Coss Output capacitance − Reverse transfer capacitance Crss − Turn-on delay time td (on) ∗ − Rise time tr ∗ − Turn-off delay time td (off) ∗ − Fall time tf ∗ − Total gate charge Qg ∗ − Gate-source charge Qgs ∗ Gate-drain charge − Qgd ∗ Typ. − − − − 80 105 150 180 − 850 60 50 9 25 55 45 6.7 1.7 0.6 Max. ±100 − −1 −1.0 105 140 225 360 − − − − − − − − − − − Unit nA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −2.4A, VGS= −4.5V ID= −1.2A, VGS= −2.5V ID= −1.2A, VGS= −1.8V ID= −0.5A, VGS= −1.5V VDS= −10V, ID= −2.4A VDS= −10V VGS=0V f=1MHz VDD −10V VGS= −4.5V ID= −1.2A RL 8.3Ω RG=10Ω VDD −10V VGS= −4.5V ID= −2.4A RL 4.2Ω / RG=10Ω Data Sheet ∗Pulsed Body diode (source-drain) Parameter Symbol Forward voltage ∗Pulsed Min. − Typ. − Max. −1.2 Unit V Conditions IS= −2.4A, VGS=0V VSD ∗ Parameter Forward voltage drop Reverse leakage Symbol VF IR Min. − − Typ. 0.37 − Max. 0.41 500 Unit V µA IF= 1.0A VR=20V Conditions www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.06 - Rev.A TT8U1 Electrical characteristics curves 5 DRAIN CURRENT : -ID [A] Ta=25°C Pulsed VGS= -10V VGS= -4.5V DRAIN CURRENT : -ID [A] 5 VGS= -10V 4 VGS= -4.5V 10 VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Data Sheet DRAIN CURRENT : -ID [A] 4 VGS= -2.5V VGS= -1.8V 1 3 3 VGS= -2.5V VGS= -1.8V 0.1 2 VGS= -1.5V 1 VGS= -1.4V 0 0 0.2 0.4 0.6 0.8 1 2 0.01 1 VGS= -1.5V VGS= -1.4V 0 2 4 6 Ta=25°C Pulsed 8 10 0 0.001 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics( Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed 1000 VGS= -4.5V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= -2.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= -1.8V Pulsed VGS= -1.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 1000 10 VDS= -10V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 10 0.1 0.1 1 DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 10 www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.06 - Rev.A TT8U1 250 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] 10000 Ta=25°C Pulsed SWITCHING TIME : t [ns] 1000 tf 100 td (off) Data Sheet 10 REVERSE DRAIN CURRENT : -Is [A] VGS=0V Pulsed 200 Ta=25°C VDD = -10V VGS= -4.5V R G=10Ω Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 150 ID = -2.4A 100 ID = -1.2A 0.1 50 10 tr td(on) 0.1 1 10 0.01 0 0.5 1 1.5 0 0 2 4 6 8 10 1 0.01 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID [A] Fig.12 Switching Characteristics 5 GATE-SOURCE VOLTAGE : -VGS [V] 10000 REVERSE CURRENT : IR [mA] CAPACITANCE : C [pF] 4 Ciss 1000 Coss 100 Ta=25°C f=1MHz VGS=0V 100 10 1 pulsed Ta = 125℃ 3 Ta = 75℃ 0.1 Ta = 25℃ 0.01 0.001 0.0001 0 10 20 30 40 REVERSE VOLTAGE : VR [V] Fig.15 Reverse Current vs. Reverse Voltage 2 Ta=25°C VDD = -10V ID = -2.4A R G=10Ω Pulsed 0 2 4 6 8 1 Crss 10 0.01 0.1 1 10 100 0 Ta= - 25℃ TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage 10000 FORWARD CURRENT : IF[mA] pulsed 1000 100 Ta = 125℃ Ta = 75℃ Ta= 25℃ Ta= - 25℃ 10 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.16 Forward Current vs. Forward Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.06 - Rev.A TT8U1 Measurement circuits Pulse width ID VGS RL D.U.T. RG VDD VDS Data Sheet VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore ; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2009 ROHM Co., Ltd. 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