UM6J1N_09

4V Drive Pch MOSFET UM6J1N Structure Silicon P-channel MOSFET Dimensions (Unit : mm) UMT6 2.0 1.3 0.9 0.65 (5) (6) (4) 0.2 0.15 Each lead has same dimensions Abbreviated symbol : J01 Applications Switching Packaging specifications Package Type UM6J1N ∗2 Inner circuit Taping TN 3000 (6) (5) (4) Code Basic ordering unit (pieces) ∗1 ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 PD Tch Tstg ∗2 Limits −30 ±20 ±0.2 ±0.4 150 120 150 −55 to +150 Unit V V A A mW / TOTAL mW / ELEMENT °C °C Thermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 833 1042 Unit °C/W / TOTAL °C/W / ELEMENT www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 0.1Min. Features 1) Two RSU002P03 transistors in a single UMT package. 2) The MOSFET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 0.65 0.7 1pin mark (1) (2) (3) 1.25 2.1 1/3 2009.04 - Rev.A UM6J1N Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state ∗ RDS (on) − resistance − Yfs ∗ 0.2 Forward transfer admittance Ciss − Input capacitance Coss − Output capacitance − Crss Reverse transfer capacitance − td (on) ∗ Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time ∗ Pulsed Data Sheet Typ. − − − − 0.9 1.4 1.6 − 30 4 5 8 5 30 40 Max. ±10 − −1 −2.5 1.4 2.1 2.4 − − − − − − − − Unit µA V µA V Ω Ω Ω S pF pF pF ns ns ns ns Conditions VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −0.2A, VGS= −10V ID= −0.15A, VGS= −4.5V ID= −0.15A, VGS= −4V VDS= −10V, ID= −0.15A VDS= −10V VGS=0V f=1MHz VDD −15V ID= −0.15A VGS= −10V RL 100Ω RG=10Ω Body diode characteristics (source-drain) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −0.1A, VGS=0V Electrical characteristic curves 100 GATE-SOURCE VOLTAGE : −VGS (V) Ta=25°C f=1MHz VGS=0V 1000 SWITCHING TIME : t (ns) CAPACITANCE : C (pF) tf Ta=25°C VDD= −15V VGS= −10V RG=10Ω Pulsed 8 7 Ta=25°C VDD= −15V ID=−200mA RG=10Ω 6 Pulsed Ciss 100 td(off) 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 10 10 td(on) Crss Coss tr 1 0.01 0.1 1 10 100 1 0.01 0.1 1 DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 1 Ta=125°C 0.1 75°C 25°C −25°C 15 ID= −125mA ID= −200mA REVERSE DRAIN CURRENT : −IS (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (Ω) VDS= −10V Pulsed 20 1 Ta=25°C Pulsed VGS=0V Pulsed DRAIN CURRENT : −ID (A) Ta=125°C 75°C 25°C −25°C 10 0.1 0.01 5 0.001 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 0 0 1 2 3 4 5 6 7 8 9 10 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 GATE-SOURCE VOLTAGE : −VGS (V) GATE-SOURCE VOLTAGE : −VGS (V) SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Reverse Drain Current vs. Source-Drain Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.04 - Rev.A UM6J1N 10 Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) Ta=125°C 75°C 25°C −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VGS= −10V Pulsed Ta=125°C 75°C 25°C −25°C 10 VGS= −4.5V Pulsed 10 Ta=125°C 75°C 25°C −25°C VGS= −4V Pulsed 1 1 1 0.1 0.01 0.1 1 0.1 0.01 0.1 1 0.1 0.01 0.1 1 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 10 Ta=25°C Pulsed VGS= −4V VGS= −4.5V VGS= −10V Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 1 0 0.01 0.1 1 DRAIN CURRENT : −ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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