Transistor
Small switching (30V, 0.1A)
UM6K1N
FFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal for portable equipment. FApplications Interfacing, switching (30V, 100mA) FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm)
FEquivalent circuit
FAbsolute maximum ratings (Ta = 25_C)
FPackaging specifications
194
Transistor
FElectrical characteristics (Ta = 25_C)
UM6K1N
FElectrical characteristic curves
Fig.1
Typical output characteristics
Fig.2
Typical transfer characteristics
Fig.3
Gate threshold voltage vs. channel temperature
195
Transistor
UM6K1N
Fig.6 Static drain-source on-state resistance vs. gate-source voltage
Fig.7 Static drain-source on-state resistance vs. channel temperature
Fig.8 Forward transfer admittance vs. drain current
Fig.11
Typical capacitance vs. drain-source voltage
Fig.12
Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms)
196
Transistor
FSwitching characteristics measurement circuit
UM6K1N
197
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