UM6K34N

Data Sheet 0.9V Drive Nch + Nch MOSFET UM6K34N  Structure Silicon N-channel MOSFET Dimensions (Unit : mm) UMT6 (SC-88) Features 1) Mounting cost and area can be cut in half. 2) Low On-resistance. 3) Low voltage drive(0.9Vdrive)makes this device ideal for portable equipment. (6) (5) (4) (1) (2) (3) Abbreviated symbol : K34  Application Interfacing, Switching Inner circuit (6) (5) ∗1 (4)  Packaging specifications Type UM6K34N Package Code Basic ordering unit (pieces) Taping TCN 3000 ○ ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗1 (1) (2) (3)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Symbol VDSS VGSS Limits 50 8 200 Unit V V mA mA mA mA mW / TOTAL mW / ELEMENT C C Continuous Pulsed Continuous Pulsed ID IDP Is Isp PD Tch Tstg *1 800 125 800 150 120 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a recommended land. Symbol Rth (ch-a) * Limits 833 1042 Unit ˚C / W /TOTAL ˚C / W /ELEMENT www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A UM6K34N  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Symbol IGSS IDSS VGS (th) Min. 50 0.3 Static drain-source on-state resistance * RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time *Pulsed 　 Data Sheet Typ. 1.6 1.7 2.0 2.2 3.0 26 6 3 5 8 17 43 Max. 10 1 0.8 2.2 2.4 2.8 3.3 9.0 - Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=50V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=4.5V ID=200mA, VGS=2.5V Drain-source breakdown voltage V (BR)DSS  ID=200mA, VGS=1.5V ID=100mA, VGS=1.2V ID=10mA, VGS=0.9V l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * 0.2 - S pF pF pF ns ns ns ns ID=200mA, VDS=10V VDS=10V VGS=0V f=1MHz ID=100mA, VDD 25V VGS=4.5V RL=250 RG=10 Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=200mA, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A UM6K34N Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) 0.2 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 0.2 0.15 DRAIN CURRENT : ID[A] 0.1 VGS= 4.5V VGS= 2.5V VGS= 1.5V VGS= 1.2V DRAIN CURRENT : ID[A] VGS= 0.9V 0.15 VGS= 4.5V VGS= 2.5V VGS= 1.5V VGS= 1.2V VGS= 0.9V 0.1 VGS= 0.8V Ta=25°C pulsed VGS= 0.8V 0.05 Ta=25°C pulsed 0.05 VGS= 0.7V 0 VGS= 0.7V 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.3 Typical Transfer Characteristics 1 VDS= 10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10000 Ta=25°C pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] DRAIN CURRENT : ID[A] 1000 . 0.01 VGS= 0.9V VGS= 1.2V VGS= 1.5V VGS= 2.5V VGS= 4.5V 0.001 0 0.2 0.4 0.6 0.8 1 GATE-SOURCE VOLTAGE : VGS[V] 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 10000 VGS= 4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10000 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 2.5V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.04 - Rev.A UM6K34N 　 Data Sheet Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 10000 VGS= 1.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) VGS= 1.2V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅵ) 10000 VGS= 0.9V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 VDS= 10V Pulsed DRAIN-CURRENT : ID[A] Fig.10 Forward Transfer Admittance vs. Drain Current STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 0.01 100 0.001 0.01 0.1 1 0.1 DRAIN-CURRENT : ID[A] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1 DRAIN-CURRENT : ID[A] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed SOURCE CURRENT : Is [A] 5000 Ta=25°C pulsed 4000 ID= 0.01A 3000 ID= 0.20A 2000 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] 0 0 1 2 3 4 5 6 7 8 GATE-SOURCE VOLTAGE : VGS[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.04 - Rev.A UM6K34N 　 Fig.14 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.13 Switching Characteristics 1000 td(off) tf 100 Ta=25°C VDD=25V VGS=4.5V RG=10Ω Pulsed 4 GATE-SOURCE VOLTAGE : VGS [V] SWITCHING TIME : t [ns] 3 2 Ta=25°C VDD=25V ID= 0.2A RG=10Ω Pulsed 0 0.5 1 1.5 10 1 td(on) 1 0.01 tr 0 0.1 DRAIN-CURRENT : ID[A] 1 TOTAL GATE CHARGE : Qg [nC] Fig.15 Typical Capacitance vs. Drain-Source Voltage 1000 Ta=25°C f=1MHz VGS=0V CAPACITANCE : C [pF] 100 Ciss 10 Crss Coss 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A UM6K34N  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A