UMA11N

EMA11 / UMA11N / FMA11A Transistors Emitter common (dual digital transistors) EMA11 / UMA11N / FMA11A !Features 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. !External dimensions (Units : mm) EMA11 / UMA11N (4) (3) 0.65 0.65 1.3 0.9 0.8 0.2 (5) 1.25 !Structure Epitaxial planar type PNP silicon transistor (Built-in resistor type) The following characteristics apply to both DTr1 and DTr2. 2.1 0.15 (1) 0.1Min. 0to0.1 All terminals have same dimensions ROHM : UMT5 EIAJ : SC-88A FMA11A Abbreviated symbol: A11 0.95 0.95 1.9 0.3 (2) (3) 0.7 !Equivalent circuit EMA11 / UMA11N (3) R1 DTr2 (4) R2 (2) R2 (1) R1 DTr1 (5) (1) 1.6 FMA11A (3) R1 DTr2 (2) R2 (4) R2 (5) R1 DTr1 (1) 0.15 2.8 (5) (4) 0.3to0.6 0to0.1 All terminals have same dimensions ROHM : SMT5 EIAJ : SC-74A Abbreviated symbol: A11 R1=4.7kΩ R2=47kΩ R1=4.7kΩ R2=47kΩ !Packaging specifications Package Code Type EMA11 UMA11N FMA11A − − − Basic ordering unit (pieces) T2R 8000 Taping TR 3000 − T148 3000 − − !Absolute maximum ratings (Ta = 25°C) Parameter Supply voltage Input voltage Symbol VCC VIN IO IC (Max.) Limits −50 −30 5 −100 −100 150 (TOTAL) 300 (TOTAL) Unit V V Output current Power dissipation mA EMA11 / UMA11N FMA11A Pd Tj Tstg mW °C °C ∗1 ∗2 Junction temperature Storage temperature 150 −55~+150 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. 1.1 2.9 2.0 (2) EMA11 / UMA11N / FMA11A Transistors !Electrical characteristics (Ta = 25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (off) GI fT R1 R2/R1 Min. − −1.3 − − − 80 − 3.29 8 Typ. − − −0.1 − − − 250 4.7 10 Max. −0.5 − −0.3 −1.8 −0.5 − − 6.11 12 Unit V V mA µA − MHz kΩ − Conditions VCC=−5V, IO=−100µA VO=−0.3V, IO=−5mA IO/II=−5mA/−0.25mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−10mA VCE=10mA, IE=−5mA, f=100MHz − − ∗ ∗ Transition frequency of the device !Electrical characteristic curves −100 −50 VO=−0.3V OUTPUT CURRENT : Io (A) −10m −5m −2m −1m −500µ −200µ −100µ −50µ −20µ −10µ −5µ −2µ VCC=−5V 1k 500 VO=−5V Ta=100°C 25°C −40°C INPUT VOLTAGE : VI (on) (V) −20 −10 −5 −2 −1 DC CURRENT GAIN : GI −2 −2.5 −3 200 100 50 20 10 5 2 Ta=−40°C 25°C 100°C Ta=100°C 25°C −40°C −500m −200m −100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m −1µ 0 −0.5 −1 −1.5 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 DC current gain vs. output current −1 −500m lO/lI=20 Ta=100°C 25°C −40°C OUTPUT VOLTAGE : VO (on) (V) −200m −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current