UMB3N

EMB3 / UMB3N / IMB3A Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A !Features 1) Two DTA143T chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. !External dimensions (Units : mm) (4) 0.65 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9 EMB3, UMB3N (3 ) 0.2 (6) 1.25 2.1 0.15 0.1Min. !Structure Dual PNP digital transistor (each with single built in resistor) The following characteristics apply to both DTr1 and DTr2. 0to0.1 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol: B3 IMB3A (6) 0.3 (4) (5) !Equivalent circuit 0.15 1.6 2.8 EMB3, UMB3N (3) (2) R1 (1) IMB3A (4) (5) R1 (6) 0.3to0.6 DTr1 DTr2 R1 (5) DTr2 R1 (2) DTr1 0to0.1 Each lead has same dimensions (4) (6) (3) (1) ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: B3 R1=4.7kΩ R1=4.7kΩ !Packaging specifications Package Code Type EMB3 UMB3N IMB3N − − − Basic ordering unit (pieces) T2R 8000 Taping TN 3000 − T110 3000 − − !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation EMB3,UMB3N IMB3A Tj Tstg Symbol VCBO VCEO VEBO IC PC Limits −50 −50 −5 −100 150 (TOTAL) 300 (TOTAL) 150 −55~+150 °C °C Unit V V V mA mW ∗1 ∗2 Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. (3) (2) (1) (1) 2.0 (5 ) (2) EMB3 / UMB3N / IMB3A Transistors !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT R1 Min. −50 −50 −5 − − − 100 − 3.29 Typ. − − − − − − 250 250 4.7 Max. − − − −0.5 −0.5 −0.3 600 − 6.11 Unit V V V µA µA V − MHz kΩ IC=−50µA IC=−1mA IE=−50µA VCB=−50V VEB=−4V IC/IB=−5mA/−2.5mA VCE=−5V, IC=−1mA VCE=10mA, IE=−5mA, f=100MHz − Conditions ∗ ∗ Transition frequency of the device !Electrical characteristic curves 1k 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=−5V −1 lC/lB=20 Ta=100°C 25°C −40°C −500m −200m DC CURRENT GAIN : hFE 200 100 50 Ta=100°C 25°C −40°C −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage vs. collector current