UMC4NTR

EMC4 / UMC4N / FMC4A Transistors Power management (dual digital transistors) EMC4 / UMC4N / FMC4A zExternal dimensions (Units : mm) zStructure Epitaxial planar type NPN / PNP silicon transistor (Built-in resistor type.) 0.5 0.5 1.0 1.6 0.22 EMC4 (3) (4) (2) (5) 1.2 1.6 (1) 0.5 0.13 zFeatures 1) Both the DTA114Y chip and DTC114E chip in a EMT or UMT or SMT package. 2) Ideal for power switch circuits. 3) Mounting cost and area can be cut in half. Each lead has same dimensions ROHM : EMT5 Abbreviated symbol : C4 1.3 2.0 0.65 0.65 (1) (5) zEquivalent circuit (2) 0.2 (4) (3) UMC4N 1.25 R2 R2 DTr2 R1 (4) (3) R1 DTr1 DTr1 R1=47kΩ R2=47kΩ DTr2 R1=10kΩ (5) R2=47kΩ 2.1 (4) (5) R2 DTr1 R2 DTr2 R1 (2) (1) DTr1 R1=47kΩ R2=47kΩ DTr2 R1=10kΩ R2=47kΩ 0.9 R1 (1) 0.7 (2) 0to0.1 (3) FMC4A 0.15 EMC4 / UMC4N 0.1Min. Each lead has same dimensions ROHM : UMT5 EIAJ : SC-88A Abbreviated symbol : C4 2.9 0.8 1.1 (3) (4) Taping (5) (1) Package 0.95 0.95 1.9 zPackaging specifications (2) 0.3 FMC4A 1.6 TR T148 Basic ordering unit (pieces) 8000 3000 3000 EMC4 UMC4N FMC4A 2.8 0.15 T2R 0.3to0.6 0to0.1 Type Code Each lead has same dimensions ROHM : SMT5 EIAJ : SC-74A Abbreviated symbol : C4 EMC4 / UMC4N / FMC4A Transistors zAbsolute maximum ratings (Ta = 25°C) Parameter Supply voltage VCC Input voltage VIN Unit DTr1 DTr2 50 −50 40 −40 −10 6 IO 30 −100 IC (Max.) 100 −100 Output current Power dissipation Limits Symbol EMC4, UMC4N V V mA 150 (TOTAL) Pd FM4A mW 300 (TOTAL) Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C ∗1 ∗2 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. zElectrical characteristics (Ta = 25°C) DTr1 Parameter Input voltage Output voltage Input current Output current DC current gain Symbol Min. Typ. Max. VI (off) − − 0.5 VI (on) 3 − − VO (on) − 0.1 0.3 V II − − 0.18 mA IO (off) − − 0.5 µA VCC=50V, VI=0V GI 68 − − − VO=5V, IO=5mA Unit V Conditions VCC=5V, IO=100µA VO=0.3V, IO=2mA IO=10mA, II=0.5mA VI=5V Transition frequency fT − 250 − MHz Input resistance R1 32.9 47 61.1 kΩ VCE=10mA, IE=−5mA, f=100MHz − Resistance ratio R2/R1 0.8 1 1.2 − − Symbol Min. Typ. Max. Unit VI (off) − − −0.3 VI (on) −1.4 − − VO (on) − −0.1 −0.3 V ∗ ∗ Transition frequency of the device DTr2 Parameter Input voltage Output voltage V Conditions VCC=−5V, IO=−100µA VO=−0.3V, IO=−1mA IO=−5mA, II=−0.25mA II − − −0.88 mA VI=−5V IO (off) − − −0.5 µA VCC=−50V, VI=0V DC current gain GI 68 − − − VO=−5V, IO=−5mA Transition frequency fT − 250 − MHz Input resistance R1 7 10 13 kΩ − Resistance ratio R2/R1 3.7 4.7 5.7 − − Input current Output current ∗ Transition frequency of the device VCE=10mA, IE=−5mA, f=100MHz ∗ EMC4 / UMC4N / FMC4A Transistors zElectrical characteristic curves DTr1 (NPN) OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 20 10 Ta=−40˚C 25˚C 100˚C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 1k 10m VCC=5V 5m VO=0.3V 50 2m Ta=100˚C 25˚C 1m −40˚C 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 50m 100m 200 100 Fig.1 Input voltage vs. output current (ON characteristics) Ta=100˚C 25˚C −40˚C 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 1 100µ 200µ 3.0 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) VO=5V 500 DC CURRENT GAIN : GI 100 Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 DC current gain vs. output current DTr2 (PNP) −100 lO/lI=20 100m INPUT VOLTAGE : VI (on) (V) OUTPUT VOLTAGE : VO (on) (V) 200m Ta=100˚C 25˚C −40˚C 50m 20m 10m 5m −20 −10 −5 −2 1m 100µ 200µ −1 −500m 500µ 1m 2m 5m 10m 20m −100m −100µ −200µ −500µ −1m −2m 50m 100m OUTPUT CURRENT : IO (A) 1k Fig.5 Input voltage vs. output current (ON characteristics) −1000m lO/lI=20 −500m OUTPUT VOLTAGE : VO (on) (V) DC CURRENT GAIN : GI 200 VO=−5V Ta=100˚C 25˚C −40˚C −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 500 Ta=−40˚C 25˚C 100˚C −200m 2m 100 50 20 10 5 2 −200m −100m Ta=100˚C 25˚C −40˚C −50m −20m −10m −5m −2m 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.7 DC current gain vs. output current −10m −5m VO=−0.3V −50 500m OUTPUT CURRENT : Io (A) 1 −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.8 Output voltage vs. output current VCC=−5V −2m −1m −500µ Ta=100˚C 25˚C −40˚C −200µ −100µ −50µ −20µ −10µ −5µ −2µ −1µ 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 INPUT VOLTAGE : VI (off) (V) Fig.6 Output current vs. input voltage (OFF characteristics)