UMF24NTR

EMF24 / UMF24N Transistors Power management (dual transistors) EMF24 / UMF24N 2SC4617 and DTC114E are housed independently in a EMT6 or UMT6 package. zExternal dimensions (Units : mm) zApplication Power management circuit 0.22 (5) (2) 1.2 1.6 (1) 0.5 0.13 (6) zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. (3) (4) 0.5 0.5 1.0 1.6 EMF24 ROHM : EMT6 Each lead has same dimensions Abbreviated symbol : F24 1.3 0.65 (1) 2.0 (3) (2) (4) (5) (6) 0.2 0.65 UMF24N zStructure Silicon epitaxial planar transistor 1.25 zEquivalent circuits 0.1Min. DTr2 Tr1 R1 ROHM : UMT6 EIAJ : SC-88 R2 (4) 0.9 (1) 0.7 (2) 0∼0.1 (3) 0.15 2.1 Each lead has same dimensions Abbreviated symbol :F24 (5) (6) R1=10kΩ R2=10kΩ zPackaging specifications Type EMF24 UMF24N Package EMT6 UMT6 Marking F24 F24 Code T2R TR Basic ordering unit(pieces) 8000 3000 Rev.A 1/4 EMF24 / UMF24N Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Parameter Collector current IC 150 mA Power dissipation PC 150 (TOTAL) mW Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C ∗ ∗ 120mW per element must not be exceeded. DTr2 Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Symbol Limits VCC 50 VIN −10~+40 IC 100 50 IO PC 150(TOTAL) Tj 150 Tstg −55 to +150 Unit V V mA mA mW °C °C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA ICBO − − 0.1 µA VCB=60V VEB=7V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance IEBO − − 0.1 µA VCE (sat) − − 0.4 V IC/IB=50mA/5mA hFE 180 − 390 − VCE=6V, IC=1mA fT − 180 − Cob − 2 3.5 MHz VCE=12V, IE=−2mA, f=100MHz PF VCB=12V, IE=0A, f=1MHz DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Symbol Min. Typ. Max. VI(off) − − 0.5 VI(on) 3 − − VO(on) − 0.1 0.3 V Unit V VO=0.3V, IO=10mA IO/II=10mA/0.5mA II − − 0.88 mA IO(off) − − 0.5 µA VCC=50V, VI=0V GI 30 − − − VO=5V, IO=5mA Input resistance R1 7 10 13 kΩ Resistance ratio R2/R1 0.8 1 1.2 − fT − 250 − MHz Transition frequency Conditions VCC=5V, IO=100µA VI=5V − − VCE=10V, IE=−5mA, f=100MHz ∗ ∗ Transition frequency of the device Rev.A 2/4 EMF24 / UMF24N Transistors zElectrical characteristic curves Tr1 COLLECTOR CURRENT : IC (mA) 2 1 25˚C −55˚C 5 0.5 0.2 0.30mA 0.20mA 0.10mA 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.05mA DC CURRENT GAIN : hFE 50 20 1.6 VCE=5V −55˚C 100 50 20 0.5 1 2 5 10 20 50 100 200 10 0.2 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( I ) 15µA 2 5 10 20 50 100 200 0.5 IC/IB=10 0.2 0.1 Ta=100˚C 25˚C −55˚C 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.8 Collector-emitter saturation voltage vs. collector current ( II ) 12µA 9µA 6µA 2 3µA IB=0A 0 0 4 8 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( II ) Ta=25˚C 0.5 0.2 0.1 IC/IB=50 0.05 20 10 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current Fig.5 DC current gain vs. collector current ( II ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=25˚C 1 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( I ) 0.5 0.5 18µA 4 2.0 25˚C 200 COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1.2 Ta=100˚C 100 0.01 0.2 0.8 500 VCE=5V 3V 1V 21µA Fig.2 Grounded emitter output characteristics ( I ) Ta=25˚C 10 0.2 0.4 24µA 6 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 200 27µA IB=0A 0 BASE TO EMITTER VOLTAGE : VBE (V) DC CURRENT GAIN : hFE 0.15mA 40 0 0.1 0 500 0.25mA 60 30µA Ta=25˚C 8 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 10 80 10 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 20 0.50mA mA 0.45mA 0.40 0.35mA Ta=25˚C COLLECTOR CURRENT : IC (mA) 100 VCE=6V Ta=100˚C COLLECTOR CURRENT : IC (mA) 50 0.5 IC/IB=50 Ta=100˚C 25˚C −55˚C 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) Fig.9 Collector-emitter saturation voltage vs. collector current ( III ) Rev.A 3/4 EMF24 / UMF24N 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.10 Gain bandwidth product vs. emitter current 20 10 Ta=25˚C f=1MHz IE=0A IC=0A Cib 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.11 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) Ta=25˚C VCE=6V 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) TRANSITION FREQUENCY : fT (MHz) Transistors Ta=25˚C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.12 Base-collector time constant vs. emitter current DTr2 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1 2m 1m 500µ 1k VCC=5V Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 VO=5V 500 DC CURRENT GAIN : GI 100 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1