UML6N_1

EML6 / UML6N Transistors General purpose transistor (isolated transistor and diode) EML6 / UML6N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Applications DC / DC converter Motor driver Dimensions (Unit : mm) EMT5 1.6 0.5 1pin mark Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 1.0 0.5 0.5 (5) (4) 1.6 1.2 (1) (2) (3) 0.22 0.13 Each lead has same dimensions Structure Silicon epitaxial planar transistor Schottky barrier diode Abbreviated symbol : L6 ROHM : EMT5 The following characteristics apply to both Di1 and Tr2. UMT5 2.0 1.3 0.65 0.65 0.9 0.7 Equivalent circuit (EML6 / UML6N) (5) (4) (5) (4) 1.25 Di1 Tr2 0.2 0.15 Each lead has same dimensions (1) (2) (3) Abbreviated symbol : L6 ROHM : UMT5 EIAJ : SC-88A Packaging specifications Type Package Marking Code Basic ordering unit (pieces) EML6 EMT5 L6 T2R 8000 UML6N UMT5 L6 TR 3000 Rev.C 0.1Min. 1pin mark (1) (2) (3) 2.1 1/4 EML6 / UML6N Transistors Absolute maximum ratings (Ta=25°C) Di1 Parameter Symbol IO Average revtified forward current Forward current surge peak (60Hz, 1∞) IFSM VR Reverse voltage (DC) Tj Junction temperature Limits 200 1 30 125 Unit mA A V °C Tr2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Limits 15 12 6 500 1 120 150 Unit V V V mA A mW °C ∗1 ∗1 Each terminal mounted on a recommended. Di1 / Tr2 Parameter Power dissipation Storage temperature Symbol Limits Pd 150 Tstg −55 to +125 Unit mW °C ∗ ∗ Each terminal mounted on a recommended. Electrical characteristics (Ta=25°C) Di1 Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. 0.40 4.0 Max. 0.50 30 Unit V µA Conditions IF=200mA VR=10V Tr2 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 12 15 6 − − − 270 − − Typ. − − − − − 90 − 320 7.5 Max. − − − 100 100 250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=1mA IC=10µA IE=10µA VCB=15V VEB=6V IC=200mA, IB=10mA VCE=2V, IC=10mA VCE=2V, IE=−10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz Rev.C 2/4 EML6 / UML6N Transistors Electrical characteristic curves Di1 1000 FORWARD CURRENT:IF(mA) 100 Ta=125℃ 100000 REVERSE CURRENT:IR(uA) 10000 1000 100 10 1 0.1 0.01 0 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 500 0 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 30 Ta=-25℃ Ta=75℃ Ta=25℃ 100 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 10 Ta=75℃ 1 0.1 0.01 10 Ta=-25℃ Ta=25℃ 0.001 1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 Tr2 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) VCE=2V Pulsed DC CURRENT GAIN : hFE 1000 Ta=125°C Ta=25°C Ta=−40°C VCE=2V Pulsed 1000 Ta=25°C Pulsed 100 100 100 5°C C C Ta= −40° Ta=25° Ta=12 IC/IB=50 10 10 10 IC/IB=20 IC/IB=10 1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 1 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.3 Grounded emitter propagation characteristics Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 100 Ta=125°C 25°C −40°C 10 1000 Ta=25°C Ta=−40°C TRANSITION FREQUENCY : fT (MHz) IC/IB=20 Pulsed BASER SATURATION VOLTAGE : VBE (sat) (mV) 1000 10000 IC/IB=20 Pulsed 1000 VCE=2V Ta=25°C Pulsed 100 Ta=125°C 100 10 1 10 1 10 100 1000 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Fig.7 Base-emitter saturation voltage vs. collector current Fig.8 Gain bandwidth product vs. emitter current Rev.C 2/4 EML6 / UML6N Transistors EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 TRANSITION FREQUENCY : IC (A) IE=0A f=1MHz Ta=25°C 10 Ta=25°C Single Pulsed 1 10ms 100ms DC 1ms 100 Cib 0.1 10 Cob 0.01 1 0.1 1 10 100 0.001 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) EMITTER CURRENT : VCE (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.10 Safe operation area Rev.C 3/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0