UMP11N_11

Data Sheet Switching Diode UMP11N Applications Ultra high speed switching Dimensions (Unit : mm) Land size figure (Unit : mm) 0.65 0.65 2.0±0.2 各リードとも same dimension 0.25± 0.1 Each lead has 0.05 同寸法 0.15±0.05 1.25±0.1 2.1±0.1 Features 1) Small mold type. (UMD6) 2) High reliability. (6) (5) 0.9 0～0.1 (1) 0.65 (2) 0.65 (3) 0.35 UMD6 Construction Silicon epitaxial planar 1.3±0.1 0.7 0.9±0.1 0.1Min ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) Structure Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 0.3±0.1 3.5±0.05 1.75±0.1 2.45±0.1 2.4±0.1 5.5±0.2 8.0±0.2 2 .2±0.1 4.0±0.1 φ1.1±0.1 0～0.5 2.4±0.1 1.15±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current (Single) Average retcified forward current Surge current (t=1us) Power dissipation Junction temperature Storage temperature VRM VR IFM Io Isurge Pd Tj Tstg Limits 80 80 300 100 4 150 150 55 to 150 Unit V V mA mA A mW °C °C Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current Capacitance between terminals Reverse recovery time VF IR Ct trr Min. - Typ. - Max. 1.2 0.1 3.5 4 Unit V μA pF ns Conditions IF=100mA VR=70V VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.B 1.6 (4) UMP11N 　 Data Sheet 100 Ta=75℃ Ta=125℃ 10000 Ta=150℃ Ta=125℃ 10 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) 1000 100 10 1 0.1 0.01 0.001 Ta=75℃ Ta=25℃ Ta=-25℃ 10 Ta=150℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 Ta=-25℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 1000 0.1 0 10 20 30 40 50 60 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 80 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 900 100 10 Ta=25℃ VR=70V n=10pcs 9 8 7 6 5 4 3 2 1 0 IR DISPERSION MAP Ct DISPERSION MAP AVE:2.850pF Ta=25℃ VR=0V f=1MHz n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 70 60 50 40 30 20 10 0 AVE:4.310nA 880 870 860 AVE:870.1mV 850 VF DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) 890 Ta=25℃ IF=100mA n=30pcs 90 80 20 10 5 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 9 8 7 6 5 4 3 2 1 0 AVE:1.93ns Ifsm 15 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 4 3 2 1 0 1 Ifsm 8.3ms 8.3ms 1cyc 10 5 AVE:2.50A 0 IFSM DISRESION MAP trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 100 1000 Rth(j-a) 10 9 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t ELECTROSTATIC DDISCHARGE TEST ESD(KV) 8 7 6 5 4 3 2 1 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:1.47kV AVE:2.98kV Rth(j-c) 100 Mounted on epoxy board IM=1mA IF=10mA 10 1ms time 300us 1 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 10 0.001 0.01 1 10 100 TIME:t(ms) Rth-t CHARACTERISTICS 0.1 1000 ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A