UMR11N

Data Sheet Switching Diode UMR11N Applications High frequency switching Dimensions(Unit : mm) Land size figure(Unit : mm) 0.65 0.65 2.0±0.2 各リードと も 0.25± 0.1 Each lead has same dimension 0.05 同寸法 0.15±0.05 1.25±0.1 2.1±0.1 Features 1)Small mold type.(UMD6) 2)High reliability 0.9 0.35 0～0.1 0.1Min (1) 0.65 (2) 0.65 (3) UMD6 Construction Silicon epitaxial planer 1.3±0.1 0.7 0.9±0.1 Structure ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) (1) (2) (3) (6) (5) (4) Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 2.45±0.1 2.4±0.1 5.5±0.2 8.0±0.2 2.2±0.1 4.0±0.1 φ1.1±0.1 0～0.5 2.4±0.1 1.15±0.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current (Single) Average retcified forward current Surge current (t=1us) Power dissipation Junction temperature Storage temperature VRM VR IFM Io Isurge Pd Tj Tstg Limits 80 80 300 100 4 200 150 55 to 150 Unit V V mA mA A mW C C Electical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current Capacitance between terminals Reverse recoverytime VF IR Ct trr Min. - Typ. - Max. 1.2 0.1 3.5 4 Unit V μA pF ns Conditions IF=100mA VR=70V VR=6V , f=1MHz VR=6V,IF=5mA,RL=50 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A 1.6 (6) (5) (4) UMR11N 　 Ta=150 C Data Sheet 100 Ta=75 C D1,D2 Ta=125 C Ta=125 C 100 D3,D4 Ta=75 C 10000 1000 D1,D2 FORWARD CURRENT:I F(mA) FORWARD CURRENT:I F(mA) REVERSE CURRENT:IR(nA) Ta=125 C 10 Ta=25 C 10 Ta=25 C Ta=150 C Ta=75 C 100 Ta=25 C 10 1 0.1 0.01 0 10 20 30 40 50 60 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 70 80 Ta=-25 C Ta=150 C 1 Ta=-25 C 1 Ta=-25 C 0.1 0 100 200 300 400 500 600 700 800 900 100 0 0.1 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10000 D3,D4 1000 Ta=150 C Ta=125 C 10 10 D1,D2 f=1MHz D3,D4 f=1MHz REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 1 0.1 0.01 0.001 0 10 20 30 40 50 60 Ta=75 C Ta=25 C Ta=-25 C 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 5 10 15 20 1 0.1 70 80 0.1 0 5 10 15 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 950 900 100 D1,D2 FORWARD VOLTAGE:V F(mV) FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(nA) 940 Ta=25 C IF=100mA n=30pcs D3,D4 890 Ta=25 C IF=100mA n=30pcs 90 80 70 60 50 40 30 20 10 0 D1,D2 Ta=25 C VR=70V n=30pcs 930 880 920 870 AVE:9.655nA 910 AVE:921.7mV 860 AVE:870.1mV 900 850 VF DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP 100 90 D3,D4 Ta=25 C VR=70V n=30pcs 10 9 D1,D2 Ta=25 C VR=6V f=1MHz n=10pcs 10 9 D3,D4 VR=6V f=1MHz REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 70 60 50 40 30 20 10 0 IR DISPERSION MAP AVE:4.310nA 7 6 5 4 3 2 1 0 Ct DISPERSION MAP AVE:1.17pF CAPACITANCE BETWEEN TERMINALS:Ct(pF) 80 8 8 7 6 5 4 3 2 1 0 Ct DISPERSION MAP AVE:1.98pF www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A UMR11N 　 Data Sheet 10 20 20 D1,D2 D3,D4 Ifsm 1cyc 8.3ms 10 REVERSE RECOVERY TIME:trr(ns) 9 8 7 6 5 4 3 2 1 0 PEAK SURGE FORWARD CURRENT:I FSM(A) PEAK SURGE FORWARD CURRENT:I FSM(A) D1,D2 D3,D4 VR=6V IF=5mA RL=50 Ifsm 15 1cyc 8.3ms 15 10 AVE:1.93ns 5 AVE:3.50A AVE:2.50A 5 AVE:2.40ns 0 0 IFSM DISPERSION MAP trr DISPERSION MAP IFSM DISPERSION MAP 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 10 IM=1mA IF=10mA time 1ms 300us 1 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A