UMT18N

EMT18 / UMT18N / IMT18 Transistors General purpose transistors (dual transistors) EMT18 / UMT18N / IMT18 Features 1) Two 2SA2018 chips in a EMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. Dimensions (Unit : mm) EMT18 Each lead has same dimensions ROHM : EMT6 Abbreviated symbol : T18 Structure Epitaxial planar type NPN silicon transistor UMT18N The following characteristics apply to both Tr1 and Tr2. ROHM : UMT6 EIAJ : SC-88 Each lead has same dimensions Abbreviated symbol : T18 Equivalent circuit EMT18 / UMT18N (3) (2) (1) IMT18 IMT18 (4) (5) (6) Tr1 Tr2 Tr2 Tr1 Each lead has same dimensions (4) (5) (6) (3) (2) (1) ROHM : SMT6 EIAJ : SC-74 JEDEC : SOT-457 Abbreviated symbol : T18 Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Limits Symbol VCBO −15 VCEO −12 VEBO −6 IC −500 ∗1 ICP 1.0 EMT6 ∗2 150 (TOTAL) PC UMT6 SMT6 300 (TOTAL)∗3 Tj 150 Tstg −55 to +150 Unit V V V mA A mW °C °C Power dissipation Junction temperature Storage temperature ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. ∗3 200mW per element must not be exceeded. Rev.B 1/3 EMT18 / UMT18N / IMT18 Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO −15 − − Collector-emitter breakdown voltage BVCEO −12 Emitter-base breakdown voltage BVEBO −6 − Collector cutoff current ICBO − − Emitter cutoff current IEBO − − Collector-emitter saturation voltage VCE (sat) − −100 DC current transfer ratio hFE 270 − Transition frequency fT − 260 Output capacitance Cob − 6.5 Max. Unit Conditions − V IC= −10µA − V IC= −1mA − V IE= −10µA −0.1 µA VCB= −15V −0.1 µA VCB= −6V −250 mV IC / IB= −200mA / −10mA VCE= −2V, IC= −10mA 680 − − MHz VCE= −2V, IE=10mA, f=100MHz − pF VCB= −10V, IE=0A, f=1MHz Packaging specifications and hFE Type EMT18 UMT18N IMT18 Package name Code Basic ordering unit (pieces) T2R 8000 − − Taping TR 3000 − − T110 3000 − − Electrical characteristic curves 1000 VCE=2V 1000 500 200 100 50 20 10 5 2 Ta=125°C Ta=25°C Ta= −40°C VCE=2V 1000 500 IC / IB=20 COLLECTOR CURRENT : IC (mA) 500 COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 1 0 Ta=125°C Ta=25°C Ta= −40°C 200 100 50 20 10 5 2 Ta=125°C Ta=25°C Ta= −40°C 0.5 1.0 1.5 1 1 2 5 10 20 50 100 200 500 1000 1 1 2 5 10 20 50 100 200 500 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded Emitter Propagation Characteristics Fig.2 DC Current Gain vs. Collector Current Fig.3 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) Rev.B 2/3 EMT18 / UMT18N / IMT18 Transistors BASER SATURATION VOLTAGE : VBE (sat) (mV) 1000 500 TRANSITION FREQUENCY : fT (MHz) Ta=25°C 10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 Ta= −40°C Ta=25°C Ta=125°C IC / IB=20 1000 500 200 100 50 20 10 5 2 1 1 2 5 10 20 VCE=2V Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 IC / IB=50 IC / IB=20 IC / IB=10 50 100 200 500 1000 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IC (mA) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) Fig.5 Base-Emitter Saturation Voltage vs.Collecter Current Fig.6 Gain Bandwidth Product vs. Emitter Current EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 Cob Cib IE=0A f=1MHz Ta=25°C 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0