UMT1NTN

UMT1NTN

  • 厂商:

    ROHM(罗姆)

  • 封装:

    SOT-363

  • 描述:

    通用三极管 Dual PNP Ic=150mA Vceo=50V hfe=120~560 P=150mW SOT363

  • 详情介绍
  • 数据手册
  • 价格&库存
UMT1NTN 数据手册
EMT1 / UMT1N / IMT1A Datasheet General purpose transistor (dual transistors) l Outline Parameter VCEO Tr1 and Tr2 -50V IC -150mA     EMT6 UMT6     EMT1 SC-107C UMT1N SOT-363   SMT6 l Features 1)Two 2SA1037AK chips in a EMT, UMT or   SMT package. 2)Mounting possible with EMT3, UMT3 or   SMT3automatic mounting machines. 3)Transistor elements are independent,   eliminating interference. 4)Mounting cost and area can be cut in half.           IMT1A SOT-457                       l Inner circuit EMT1 / UMT1N IMT1A l Application GENERAL PURPOSE SMALL SIGNAL AMPLIFIER       l Packaging specifications       Part No. Package Package size Taping code EMT1 UMT1N IMT1A EMT6 UMT6 SMT6 1616 2021 2928 T2R TN T110 180 180 180       Basic ordering unit.(pcs) Marking 8 8 8 8000 3000 3000 T1 T1 T1       Reel size Tape width (mm) (mm)                                                                                           www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/8 20150515 - Rev.003 EMT1 / UMT1N / IMT1A Datasheet l Absolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V IC -150 mA EMT1/ UMT1N PD*1 *2 150 mW/Total IMT1A PD*1 *3 300 mW/Total Tj 150 ℃ Tstg -55 to +150 ℃ Collector current Power dissipation Junction temperature Range of storage temperature l Electrical characteristics (Ta = 25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Conditions Values Unit Min. Typ. Max. IC = -50μA -60 - - V BVCEO IC = -1mA -50 - - V BVEBO IE = -50μA -6 - - V Collector cut-off current ICBO VCB = -60V - - -100 nA Emitter cut-off current IEBO VEB = -6V - - -100 nA - - -500 mV 120 - 560 - VCE = -12V, IE = 2mA, f = 100MHz - 140 - MHz VCB = -12V, IE = 0A, f = 1MHz - 4 5 pF Collector-emitter saturation voltage DC current gain VCE(sat) IC = -50mA, IB = -5mA hFE VCE = -6V, IC = -1mA Transition frequency fT Output capacitance Cob *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded.                                              www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.   2/8                                           20150515 - Rev.003     EMT1 / UMT1N / IMT1A Datasheet l Electrical characteristic curves (Ta = 25°C) Fig.1 Ground Emitter Propagation     Characteristics Fig.2 Grounded Emitter Output     Characteristics Fig.3 DC Current Gain vs. Collector     Current (I) Fig.4 DC Current Gain vs. Collector     Current (lI)                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/8 20150515 - Rev.003     EMT1 / UMT1N / IMT1A Datasheet l Electrical characteristic curves (Ta = 25°C) Fig.5 Collector-Emitter Saturation Voltage     vs. Collector Current(l) Fig.6 Collector-Emitter Saturation Voltage     vs. Collector Current(ll) Fig.7 Base-Emitter Saturation Voltage     vs. Collector Current (I) Fig.8 Gain Bandwith Product vs.      Emitter Current                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/8 20150515 - Rev.003     EMT1 / UMT1N / IMT1A Datasheet l Electrical characteristic curves (Ta =25°C) Fig.9 Collector Output Capacitance vs.     ollector-Base Voltage      Emitter Input Capacitance vs.      Emitter-Base Voltage Fig.10 Safe Operating Area Fig.11 Safe Operating Area Fig.12 Safe Operating Area                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/8 20150515 - Rev.003     EMT1 / UMT1N / IMT1A Datasheet l Dimensions                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 6/8 20150515 - Rev.003     EMT1 / UMT1N / IMT1A Datasheet l Dimensions                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 7/8 20150515 - Rev.003     EMT1 / UMT1N / IMT1A Datasheet l Dimensions                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 8/8 20150515 - Rev.003
UMT1NTN
物料型号:UMT1NTN 器件简介:UMT1NTN 是 ROHM 公司生产的一款晶体振荡器,具有高精度和低功耗的特点,适用于需要稳定时钟源的应用。

引脚分配:UMT1NTN 有 4 个引脚,分别为 VCC(电源正极)、GND(电源负极)、OUT(输出)、NC(空脚)。

参数特性:工作温度范围为 -40 至 +85 摄氏度,频率稳定性为 ±20ppm,电源电压范围为 1.62 至 3.58V,工作电流为 0.18mA。

功能详解:UMT1NTN 提供稳定的时钟信号,适用于通信设备、计算机、消费电子等领域。

应用信息:适用于需要精确时钟信号的各种电子设备,如智能手机、平板电脑、GPS 导航系统等。

封装信息:UMT1NTN 的封装为 2.0x1.6mm 的小型贴片封装,适合空间受限的应用场景。
UMT1NTN 价格&库存

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UMT1NTN
  •  国内价格
  • 10+0.33050
  • 100+0.26210
  • 600+0.25948
  • 1200+0.25429
  • 3000+0.24666

库存:2044