UMT2222A / SST2222A / MMST2222A
Transistors
NPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / MMST2222A
Features 1) BVCEO > 40V (IC=10mA) 2) Complements the UMT2907A / SST2907A / MMST2907A. Dimensions (Unit : mm)
UMT2222A
ROHM : UMT3 EIAJ : SC-70
(1) Emitter (2) Base (3) Collector
Package, marking, and packaging specifications
Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT2222A UMT3 R1P T106 3000 SST2222A MMST2222A SST3 R1P T116 3000 SMT3 R1P T146 3000
SST2222A
ROHM : SST3
(1) Emitter (2) Base (3) Collector
Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current UMT2222A,SST2222A, MMST2222A PC Tj Tstg Symbol VCBO VCEO VEBO IC Limits 75 40 6 0.6 0.2 0.35 150 −55 to +150 Unit V V V A W W °C °C
MMST2222A
ROHM : SMT3 EIAJ : SC-59
(1) Emitter (2) Base (3) Collector
Collector power SST2222A dissipation Junction temperature Storage temperature
∗
∗ When mounted on a 7 x 5 x 0.6 mm ceramic board
Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) Min. 75 40 6 − − − − 0.6 − 35 DC current transfer ratio hFE 50 75 50 100 Transition frequency Output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time fT Cob Cib td tr tstg tf 40 300 − − − − − − Typ. − − − − − − − − − − − − − − − − − − − − − − Max. − − − 100 100 0.3 1 1.2 2 − − − − 300 − − 8 25 10 25 225 60 MHz pF pF ns ns ns ns − Unit V V V nA nA V V IC =10µA IC =10mA IE =10µA VCB = 60V VEB = 3V IC/IB =150mA/15mA IC/IB =500mA/50mA IC/IB =150mA/15mA IC/IB =500mA/50mA VCE =10V , IC =0.1mA VCE =10V , IC =1mA VCE =10V , IC =10mA VCE =1V , IC =150mA VCE =10V , IC =150mA VCE =10V , IC =500mA VCE =20V , IC =−20mA, f =100MHz VCB =10V , f =100kHz VEB =0.5V , f =100kHz VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA VCC =30V , IC =150mA , IB1 =−IB2 =15mA VCC =30V , IC =150mA , IB1 =−IB2 =15mA Conditions
Rev.A
1/3
UMT2222A / SST2222A / MMST2222A
Transistors
Electrical characteristic curves
100
COLLECTOR CURRENT : Ic(mA)
Ta=25°C
600 500 400
1000
Ta=25°C
DC CURRENT GAIN : hFE
VCE=10V
50
300 200 100
100
1V
0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE(V)
IB=0µA
10 0.1
1.0
10 COLLECTOR CURRENT : Ic(mA)
100
1000
Fig.1 Grounded emitter output characteristics
Fig.3 DC current gain vs. collector current(Ι)
COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V)
Ta=25°C IC / IB=10 0.3
1000
VCE=10V
DC CURRENT GAIN : hFE
Ta=125°C
0.2
25°C −55°C
100
0.1
0 1.0
10 100 1000 COLLECTOR CURRENT : Ic(mA)
10 0.1
1.0
10 COLLECTOR CURRENT : Ic(mA)
100
1000
Fig.2 Collector-emitter saturation voltage vs. collector current
Fig.4 DC current gain vs. collector current(ΙΙ)
BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V)
1000
1.8 1.6
Ta=25°C VCE=10V f=1kHz
Ta=25°C IC / IB=10
AC CURRENT GAIN : hFE
1.2
100
0.8
0.4
10 0.1
0 1.0
1.0
10 COLLECTOR CURRENT : Ic(mA)
100
1000
10 100 1000 COLLECTOR CURRENT : Ic(mA)
Fig.5 AC current gain vs. collector current
Fig.6 Base-emitter saturation voltage vs. collector current
Rev.A
2/3
UMT2222A / SST2222A / MMST2222A
Transistors
BASE EMITTER VOLTAGE : VBE(ON)(V)
1.8 1.6
Ta=25°C VCE=10V
1000
Ta=25°C IC / IB=10
500
Ta=25°C VCC=30V IC / IB=10
TURN ON TIME : ton(ns)
1.2
100 VCC=30V 10V
0.8
0.4
RISE TIME : tr(ns)
100
10
0 1 10 100 1000 COLLECTOR CURRENT : Ic(mA)
10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA)
5 1.0
10 100 1000 COLLECTOR CURRENT : Ic(mA)
Fig.7 Grounded emitter propagation characteristics
Fig.8 Turn-on time vs. collector current
Fig.9 Rise time vs. collector current
1000
Ta=25°C VCC=30V IC=10IB1=10IB2
1000
Ta=25°C VCC=30V IC=10IB1=10IB2
100
Ta=25°C f=1MHz
STORAGE TIME : Ts(ns)
CAPACITANCE(pF)
FALL TIME : tf(ns)
Cib
100
100
10
Cob
10 1.0
10 100 1000 COLLECTOR CURRENT : Ic(mA)
10 1.0
10 100 1000 COLLECTOR CURRENT : Ic(mA)
1 0.1
1.0 10 REVERSE BIAS VOLTAGE(V)
100
Fig.10 Storage time vs. collector current
Fig.11 Fall time vs. collector current
Fig.12 Input / output capacitance vs. voltage
100
COLLECTOR-EMITTER VOLTAGE : VCE(V)
100MHz 250MHz 300MHz 200MHz 10
1 250MHz
0.1
CURRENT GAIN-BANDWIDTH PRODUCT(MHz)
Ta=25°C
1000
Ta=25°C VCE=10V
100
1
10 100 1000 COLLECTOR CURRENT : Ic(mA)
10 1.0
10 100 1000 COLLECTOR CURRENT : Ic(mA)
Fig.13 Gain bandwidth product
Fig.14 Gain bandwidth product vs. collector current
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0