UMT2907A

UMT2907A / SST2907A / MMST2907A Transistors PNP Medium Power Transistor (Switching) UMT2907A / SST2907A / MMST2907A Features 1) BVCEO< -60V (IC=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A. Dimensions (Unit : mm) UMT2907A Package, marking and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT2907A SST2907A MMST2907A UMT3 R2F T106 3000 SST3 R2F T116 3000 SMT3 R2F T146 3000 ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector SST2907A Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current UMT2907A, SST2907A, Collector power dissipation MMST2907A SST2907A Junction temperature Storage temperature ∗ Mounted on a 7 x 5 x 0.6mm ceramic substrate. Symbol VCBO VCEO VEBO IC Limits −60 −60 −5 −0.6 0.2 0.35 150 −55 to +150 Unit V V V A W W °C °C ∗ ROHM : SST3 (1) Emitter (2) Base (3) Collector MMST2907A PC Tj Tstg ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat) VBE(sat) Min. −60 −60 −5 − − − − − − − 75 100 DC current transfer ratio hFE 100 100 50 200 − − − − − − − − Typ. − − − − − − − − − − − − − − − − − − − − − − − − Max. − − − −100 −100 −100 −0.4 −1.6 −1.3 −2.6 − − − 300 − − 8 30 50 10 40 100 80 30 MHz pF pF ns ns ns ns ns ns − Unit V V V nA nA V V IC= −10µA IC= −10mA IE= −10µA VCB= −50V VCB= −30V VEB= −3V IC/IB= −150mA/ −15mA IC/IB= −500mA/ −50mA IC/IB= −150mA/ −15mA IC/IB= −500mA/ −50mA VCE= −10V, IC= −0.1mA VCE= −10V, IC= −1mA VCE= −10V, IC= −10mA VCE= −10V, IC= −150mA VCE= −10V, IC= −500mA VCE= −20V, IE=50mA, f=100MHz VCB= −10V, f=100kHz VEB= −2V, f=100kHz VCC= −30V, VBE(OFF)= −1.5V, IC= −150mA, IB1= −15mA VCC= −30V, VBE(OFF)= −1.5V, IC= −150mA, IB1= −15mA VCC= −30V, VBE(OFF)= −1.5V, IC=− 150mA, IB1= −15mA VCC= −30V, IC= −150mA, IB1=IB2= −15mA VCC= −30V , IC= −150mA, IB1=IB2= −15mA VCC= −30V, IC= −150mA, IB1=IB2= −15mA Conditions Transition frequency Collector output capacitance Emitter input capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall time fT Cob Cib ton td tr toff tstg tf Rev.B 1/4 UMT2907A / SST2907A / MMST2907A Transistors Electrical characteristic curves Ta=25˚C COLLECTOR CURRENT : IC (mA) 600 BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V) 100 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Ta=25˚C IC / IB=10 500 400 50 300 200 100 1B=0µA 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter output characteristics Fig.2 Base-emitter saturation voltage vs. collector current 1000 Ta=25˚C DC CURRENT GAIN : hFE VCE=10V 100 1V 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.3 DC current gain vs. collector current ( I ) 1000 VCE=10V DC CURRENT GAIN : hFE Ta=125˚C Ta=25˚C 100 Ta=−55˚C 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.4 DC current gain vs. collector current ( II ) Rev.B 2/4 UMT2907A / SST2907A / MMST2907A Transistors 1000 COLLECTOR-EMITTER SATURATION VOLTAGE : VCE (sat) (V) Ta=25˚C VCE=10V f=1kHz Ta=25˚C IC / IB=10 0.3 AC CURRENT GAIN : hFE 0.2 100 0.1 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.5 AC current gain vs. collector current Fig.6 Collector-emitter saturation voltage vs. collector current CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) BASE-EMITTER ON VOLTAGE : VBE(on) (V) COLLECTOR-EMITTER VOLTAGE : VCE(V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Ta=25˚C VCE=10V 1000 100 100MHz 300MHz 10 200MHz Ta=25˚C VCE=10V Ta=25˚C 100 250MHz 1 200MHz 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.7 Grounded emitter propagation characteristics Fig.8 Gain bandwidth product vs. collector current Fig.9 Gain bandwidth product 100 Ta=25˚C f=1MHz 1000 Ta=25˚C IC / IB=10 500 Ta=25˚C VCC=30V IC / IB=10 CAPACITANCE (pF) 10 Cob 100 VCC=30V 10V RISE TIME : tr (ns) Cib TURN ON TIME : ton (ns) 100 10 1 0.1 10 1 10 REVERSE BIAS VOLTAGE (V) 100 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 5 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.10 Input/output capacitance vs. voltage Fig.11 Turn-on time vs.collector current Fig.12 Rise time vs. collector current Rev.B 3/4 UMT2907A / SST2907A / MMST2907A Transistors 1000 Ta=25˚C VCC=30V IC=10IB1=10IB2 1000 Ta=25˚C VCC=30V IC=10IB1=10IB2 STORAGE TIME : ts (ns) 100 10 FALL TIME : tf (ns) 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 100 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.13 Storage time vs. collector current Fig.14 Fall time vs. collector current Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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