UMT3906_1

UMT3906/SST3906/MMST3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 Features 1) BVCEO > −40V (IC= −1mA) 2) Complements the T3904/SST3904/MMST3909. 3) Low capacitance. Dimensions (Unit : mm) UMT3906 ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector Package, marking, and packaging specifications Type Packaging type Marking Code Basic ordering unit (pieces) UMT3906 UMT3 R2A T106 3000 SST3906 MMST3906 SST3 R2A T116 3000 SMT3 R2A T146 3000 ROHM : SST3 (1) Emitter (2) Base (3) Collector SST3906 MMST3906 Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation UMT3906 SST3906,MMST3906 SST3906,MMST3906 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IO Pd Limits −40 −40 −5 −0.2 6.2 0.35 150 −55 to +150 Unit V V V A W W °C ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector ∗ °C ∗ When mounted on a 7 5 0.6mm ceramic board. Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICES IEBO VCE(sat) VBE(sat) Min. −40 −40 −5 − − − − −0.65 − 60 80 DC current transfer ratio hFE 100 60 30 Transition frequency Collector output capacitance Emitter input capacitance Delay time Rise time Storage tiem Fall time fT Cob Cib td tr tstg tf 250 − − − − − − Typ. − − − − − − − − − − − − − − − − − − − − − Max. − − − −50 −50 −0.25 −0.4 −0.85 −0.95 − − 300 − − − 4.5 10 35 35 225 75 MHz pF pF ns ns ns ns − Unit V V V nA nA V V IC= −10µA IC= −1mA IE= −10µA VCB= −30V VEB= −3V IC/IB= −10mA/ −1mA IC/IB= −50mA/ −5mA IC/IB= −10mA/ −1mA IC/IB= −50mA/ −5mA VCE= −1V, IC= −0.1mA VCE= −1V, IC= −1mA VCE= −1V, IC= −10mA VCE= −1V, IC= −50mA VCE= −1V, IC= −100mA VCE= −20V, IE=10mA, f=100MHz VCB= −10V, f=100kHz, IE=0A VCB= −0.5V, f=100kHz, IC=0A VCC= −3V, VBE(OFF)= −0.5V,IC= −10mA, IB1= −1mA VCC= −3V, VBE(OFF)= −0.5V,IC= −10mA, IB1= −1mA VCC= −3V, IC= −10mA, IB1= −IB2= −1mA VCC= −3V, IC= −10mA, IB1= −IB2= −1mA Conditions + + Rev.B 1/4 UMT3906/SST3906/MMST3906 Transistors Electrical characteristics curves Ta=25°C VCE(sat)COLLECTOR EMITTER SATURATION VOLTAGE (V) 10 IC-COLLECTOR CURRENT (mA) 50 45 40 8 35 6 30 25 4 20 15 10 2 5 0 0 IB=0µA 10 20 0.3 IC / IB=10 Ta=25°C 0.2 0.1 0 0.1 1.0 10 100 VCE-COLLECTOR-EMITTER VOLTAGE (V) IC EMITTER COLLECTOR CURRENT (mA) Fig.1 Grounded emitter output characteristics Fig.2 Collector-emitter saturation voltage vs. collector current 500 Ta=25°C hFE-DC CURRENT GAIN VCE=5V 100 3V 1V 10 5 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 1000 Fig.3 DC current gain vs.collector current ( Ι ) 500 VCE=5V hFE-DC CURRENT GAIN Ta=125°C 100 Ta=25°C Ta= −55°C 10 5 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 1000 Fig.4 DC current gain vs. collector current ( ΙΙ ) Rev.B 2/4 UMT3906/SST3906/MMST3906 Transistors Ta=25°C VCE=5V f=1kHz VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V) 500 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 IC / IB=10 Ta=25°C hFE-AC CURRENT GAIN 100 10 5 0.01 0.1 1.0 IC-COLLECTOR CURRENT (mA) 10 100 Fig.5 AC current gain vs. collector current Fig.6 Base-emitter saturation voltage vs. collector current VBE(ON)-BASE EMITTER ON VOLTAGE (V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 VCE=5V Ta=25°C 1000 Ta=25°C IC / IB=10 1000 Ta=25°C IC / =IB=10 ton-TURN ON TIME (ns) 100 15V VCC=3V 10 40V tr-RISE TIME (ns) 100 10 1.0 10 100 IC-COLLECTOR CURRENT (mA) 1 1.0 10 100 IC-COLLECTOR CURRENT (mA) 1 1.0 10 100 IC-COLLECTOR CURRENT (mA) Fig.7 Grounded emitter propagation characteristics Fig.8 Turn-on time vs. collector current Fig.9 Rise time vs. collector current 1000 IC=101B1=101B2 Ta=25°C 1000 50 IC=101B1=101B2 Ta=25°C CAPACITANCE (pF) f=1MHz Ta=25°C tS-STORAGE TIME (ns) tf-FALL TIME (ns) 10 Cib Cob 40V 15V VCC=3V 100 100 1 10 1.0 10 100 IC-COLLECTOR CURRENT (mA) 10 1.0 10 100 IC-COLLECTOR CURRENT (mA) 0.5 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 Fig.10 Storage time vs. collector current Fig.11 Fall time vs. collector current Fig.12 Input / output capacitance vs. voltage Rev.B 3/4 UMT3906/SST3906/MMST3906 Transistors f T-CORRENT GAIN-BANDWIDTH PRODUCT (MHz) 100 VCE COLLECTOR-EMITTER VOLTAGE (V) Ta=25°C 200MHz 100MHz 300MHz 400MHz 1000 h-PARAMETER NORMALIZED TO 1mA VCE=5V Ta=25°C 100 IC=1mA hie=4.08kΩ hfe=146 hre=2.20 10−4 hoe=34.3µS + VCE=5V f=270Hz Ta=25°C hoe 10 10 100 300MHz 1.0 200MHz hfe 1 hre hie 0.1 0.1 100MHz 1 10 100 IC-COLLECTOR CURRENT (mA) 10 1 10 100 IC-COLLECTOR CURRENT (mA) 0.1 0.1 1 10 IC-COLLECTOR CURRENT (mA) 100 Fig.13 Gain bandwidth product Fig.14 Gain bandwidth product vs. collector current Fig.15 h parameter vs. collector current 12 10 ICBO-COLLECTOR CUTOFF CURRENT (A) NF-NOISE FIGURE (dB) Ta=25°C VCE=5V IC=100µA RS=10kΩ 10µ VCB=25V 1µ 8 6 4 2 0 10 100n 10n 1n 0.1n 100 1k f-FREQUENCY (Hz) 10k 100k 0 25 50 75 100 125 150 TA-AMBIENT TEMPERATURE (°C) Fig.16 Noise vs. collector current Fig.17 Noise characteristics ( Ι ) 100k 100k 12 RS-SOURCE RESISTANCE (Ω) RS-SOURCE RESISTANCE (Ω) B 10k NF 3d =1 dB B 10k RS-SOURCE RESISTANCE (Ω) 8d 5d B dB Ta=25°C VCE=5V f=30Hz 12 dB 100k Ta=25°C VCE=5V f=10Hz 8d 5d B B 10k 3d B NF =1 dB NF =1 2d B 8d B B 5d 3d B 1k NF =1 1k 3d B 5d B 8d dB 12 dB Ta=25°C VCE=5V f=10kHz 10 NF =1 1k B 3d dB B 8d 10 NF = 5d 3dB B B 5d 100 0.01 B 0.1 1 IC-COLLECTOR CURRENT (mA) 10 8d B 100 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) 0.1 1 IC-COLLECTOR CURRENT (mA) 100 0.01 Fig.18 Noise characteristics ( ΙΙ ) Fig.20 Noise characteristics ( ) Rev.B ΛΙ Fig.19 Noise characteristics (ΙΙΙ) 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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