UMX18N

EMX18 / UMX18N Transistors General purpose transistors (dual transistors) EMX18 / UMX18N Features 1) Two 2SC5585 chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. External dimensions (Unit : mm) EMX18 0.22 (4) (5) (6) (3) (2) (1) 1.2 1.6 0.13 Each lead has same dimensions ROHM : EMT6 Abbreviated symbol : X18 1.3 0.65 0.7 0.9 0.2 (6) 1.25 0.15 The following characteristics apply to both Tr1 and Tr2. 2.1 0~0.1 0.1Min. Each lead has same dimensions Equivalent circuit EMX18 / UMX18N (3) (2) (1) ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : X18 Tr1 Tr2 (4) (5) (6) Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 15 12 6 500 1.0 150 (TOTAL) 150 −55 to +150 Unit V V V mA A mW ˚C ˚C ∗1 ∗1 120mW per element must not be exceeded. (1) 2.0 (5) (2) Structure Epitaxial planar type NPN silicon transistor (4) 0.65 (3) UMX18N 0.5 0.5 0.5 1.0 1.6 Rev.A 1/3 EMX18 / UMX18N Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE 15 12 6 − − − 270 − − − − − 90 − − − − 0.1 0.1 250 680 V V V µA µA mV − IC=10µA IC=1mA IE=10µA VCB=15V VEB=6V IC/IB=200mA/10mA VCE=2V, IC=10mA Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance fT Cob − − 320 7.5 − − MHz VCE=2V, IE=−10mA, f=100MHz PF VCB=10V, IE=0A, f=1MHz Packaging specifications Package Code Type Taping T2R 8000 TN 3000 Basic ordering unit (pieces) EMX18 UMX18N Electrical characteristic curves 1000 COLLECTOR CURRENT : IC (mA) VCE = 2V 1000 500 DC CURRENT GAIN : hFE Ta = 125°C 25°C -40°C VCE = 2V COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1000 IC/IB = 20 500 200 500 200 100 50 20 10 5 2 1 200 100 50 20 10 5 2 100 50 25°C Ta = 125°C 25°C -40°C 10 5 2 Ta = 1 -40°C 20 25°C 1 0 0.5 1.0 1.5 1 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 DC current gain vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) Rev.A 2/3 EMX18 / UMX18N Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Ta = 25°C COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) 1000 500 200 100 50 20 10 5 2 1 10000 5000 2000 1000 500 200 100 50 20 10 IC/IB = 20 1000 VCE = 2V Ta = 25°C 200 Pulsed Ta = -40°C 25°C 125°C 500 100 fT (MHZ) 50 20 10 5 2 1 IC/IB = 50 20 10 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Fig.5 Base-emitter saturation voltage vs. collector current Fig.6 Collector output capacitance Emitter input capacitance vs. base voltage EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 200 100 50 Cib 20 10 5 2 1 Cob IE = 0A f = 1MHz Ta = 25°C 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs collector-base voltage Emitter input capacitance vs emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1