UMX4NTR

EMX4 / UMX4N / IMX4 Transistors High transition frequency (dual transistors) EMX4 / UMX4N / IMX4 zDimensions (Unit : mm) zFeatures 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.9pF) EMX4 zEquivalent circuits EMX4 / UMX4N (3) (2) IMX4 (1) (4) (5) Each lead has same dimensions ROHM : EMT6 (6) UMX4N (4) (5) (6) (3) (2) (1) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V 50 mA Parameter Collector current Collector power dissipation IC EMX4 / UMX4N IMX4 150(TOTAL) Pc 300(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 IMX4 ∗1 ∗2 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 zPackage, marking, and packaging specifications Type EMX4 UMX4N IMX4 Package EMT6 UMT6 SMT6 Marking Code X4 T2R X4 TR X4 T108 Basic ordering unit (pieces) 8000 3000 3000 zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 30 − − V IC=10µA Conditions Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO 3 − − − − 0.5 V µA IE=10µA VCB=15V Emitter cutoff current IEBO − − 0.5 µA DC current transfer ratio hFE 56 − 180 − VCE/IC=10V/10mA IC/IB=20mA/4mA VCE(sat) − − 0.5 V Transition frequency fT 1500 − MHz Output capacitance Cob 600 − 0.95 1.6 pF Collector-emitter saturation voltage Collector-base time constant Noise factor VEB=2V ∗ VCE/IE=10V/ −10mA, f=200MHz VCB/f=10V/1MHz, IE=0A rbb' Cc − 6 13 ps VCB=10V, IC=10mA , f=31.8MHz NF − 4.5 − dB VCE=12V, IC=2mA , f=200MHz , Rg=50Ω ∗Transition frequency of the device. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. Rev.C 1/3 EMX4 / UMX4N / IMX4 Transistors 200 100 50 20 0.1 0.2 0.5 1 2 5 10 20 50 Ta=25°C IC/IB=5 200 100 50 20 10 COLLECTOR TO BASE TIME CONSTANT : Cc rbb' (ps) TRANSITION FREQUENCY : fT (MHz) 2000 1000 500 200 −0.5 −1 −2 −5 −10 −20 0.5 −50 5 10 20 2 5 10 20 50 COLLECTOR CURRENT : Ic (mA) Fig.7 Insertion gain vs. collector current 1 2 5 10 20 50 Fig.3 Capacitance vs. reverse bias voltage 10 5 2 Ta=25°C VCE=10V f=31.8MHz 1 0.1 0.2 0.5 1 2 5 10 20 Ta=25°C VCE=10V IC=10mA 20 15 10 5 0 50 0.1 0.2 0.5 1 2 10 Fig.6 Insertion gain vs. frequency Ta=25°C IC=2mA f=200MHz Ta=25°C VCE=12V f=200MHz NOISE FIGURE : NF(dB) 25 5 FREQUENCY : f (GHz) 2 5 1 0.5 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.5 Collector to base time constance vs. collector current INSERTION GAIN : IS21el (dB) 10 0.5 0.1 0.2 50 20 30 Ta=25°C VCE=12V f=200MHz 2 INSERTION GAIN : IS21el (dB) 2 COLLECTOR CURRENT : IC (mA) 15 0 0.2 25 Fig.4 Gain bandwidth product vs. emitter current 20 Cre 50 EMITTER CURRENT : IE (mA) 25 1 Fig.2 Collector-emitter saturation voltage vs. collector current Ta=25°C VCE=10V −0.1 −0.2 0.5 COLLECTOR CURRENT : IC (mA) Fig.1 DC current gain vs. collector current 100 Cob 1.0 0.1 0.1 0.2 COLLECTOR CURRENT : IC (mA) 5000 Ta=25°C f=1MHz IE=0A 2.0 2 10 5.0 500 OUTPUT CAPACITANCE :CoB (pF) FEEDBACK CAPACITANCE :Cre (pF) Ta=25°C VCE=10V INSERTION GAIN : IS21el (dB) DC CURRENT TRANSFER RATIO :hFE 500 COLLECTOR SATURATION VOLTAGE :VCE(sat) (mV) zElectrical characteristic curves 20 15 10 20 10 5 0 0 2 4 6 8 10 12 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Insertion gain vs. collector voltage 0 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.9 Noise factor vs. collector current Rev.C 2/3 EMX4 / UMX4N / IMX4 Transistors 30 Ta=25°C IC=2mA f=200MHz NOISE FIGURE : NF(dB) 25 20 15 10 5 0 0 2 4 6 8 10 12 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Noise factor vs. collector voltage Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0