UMY1N

EMY1 / UMY1N / FMY1A Transistors Emitter common (dual transistors) EMY1 / UMY1N / FMY1A Features 1) Includes a 2SA1037AK and a 2SC2412K transistor in a EMT or UMT or SMT package. 2) PNP and NPN transistors have common emitters. 3) Mounting cost and area can be cut in half. External dimensions (Unit : mm) EMY1 0.22 (4) (5) (3) (2) (1) 0.13 1.2 1.6 Structure Epitaxial planar type PNP / NPN silicon transistor Each lead has same dimensions ROHM : EMT5 Abbreviated symbol : Y1 UMY1N (4) (3) 0.65 0.65 0.5 1.3 (5) 0.5 0.5 1.0 1.6 0.2 Equivalent circuit EMY1 / UMY1N (3) Tr2 (4) (5) (2) (1) Tr1 FMY1A 0.15 1.25 2.1 0.7 0.9 (3) Tr2 (2) (4) (5) Tr1 (1) 0.1Min. 0~0.1 Each lead has same dimensions ROHM : UMT5 EIAJ : SC-88A Abbreviated symbol : Y1 FMY1A 0.95 0.95 1.9 0.3 (2) (3) Limits Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current EMY1, UMY1N Power dissipation FMY1A Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Tr1 −60 −50 −6 −150 Tr2 60 50 7 150 Unit 0.15 (1) 1.6 V V V mA mW °C °C 2.8 0.8 1.1 0.3to0.6 0to0.1 Each lead has same dimensions 150 (TOTAL) ∗1 300 (TOTAL) ∗2 150 −55 to +150 ROHM : SMT5 EIAJ : SC-74A Abbreviated symbol : Y1 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. (5) (4) 2.9 Absolute maximum ratings (Ta = 25°C) (1) 2.0 (2) Rev.A 1/4 EMY1 / UMY1N / FMY1A Transistors Electrical characteristics (Ta = 25°C) Tr1 (PNP) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE −60 −50 −6 − − − 120 − − − − − − − − − − −0.1 −0.1 −0.5 560 V V V µA µA V − IC=−50µA IC=−1mA IE=−50µA VCB=−60V VEB=−6V IC/IB=−50mA/−5mA VCE=−6V, IC=−1mA Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance fT Cob − − 140 4 − 5 MHz VCE=−12V, IE=2mA, f=100MHz PF VCB=−12V, IE=0A, f=1MHz Tr2 (NPN) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE 60 50 7 − − − 120 − − − − − − − − − − 0.1 0.1 0.4 560 V V V µA µA V − IC=50µA IC=1mA IE=50µA VCB=60V VEB=7V IC/IB=50mA/5mA VCE=6V, IC=1mA Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance fT Cob − − 180 2 − 3.5 MHz VCE=12V, IE=−2mA, f=100MHz PF VCB=12V, IE=0A, f=1MHz Packaging specifications Packaging type Code Type Taping T2R 8000 TR 3000 T148 3000 Basic ordering unit (pieces) EMY1 UMY1N FMY1 Electrical characteristic curves Tr1 (PNP) −50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) −10 −5 −2 −1 −0.5 −0.2 −0.1 −8 −28.0 −24.5 COLLECTOR CURRENT : IC (mA) −20 Ta=100˚C 25˚C −40˚C VCE=−6V −10 −35.0 Ta=25˚C −31.5 −100 Ta=25˚C −500 −450 −400 −350 −300 −80 −6 −21.0 −17.5 −60 −250 −200 −4 −14.0 −10.5 −40 −150 −100 −2 −7.0 −3.5µA IB=0 −20 −50µA IB=0 0 −1 −2 −3 −4 −5 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 0 −0.4 −0.8 −1.2 −1.6 −2.0 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( I ) Fig.3 Grounded emitter output characteristics ( II ) Rev.A 2/4 EMY1 / UMY1N / FMY1A Transistors COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 500 500 −1 Ta=25˚C DC CURRENT GAIN : hFE VCE=−5V −3V −1V Ta=100˚C 25˚C 200 Ta=25˚C DC CURRENT GAIN : hFE −0.5 200 −40˚C −0.2 100 100 IC/IB=50 −0.1 20 10 50 50 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 VCE=−6V −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( I ) Fig.5 DC current gain vs. collector current ( II ) Fig.6 Collector-emitter saturation voltage vs. collector current ( I ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) −1 lC/lB=10 1000 20 −0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE=−12V Cib 10 500 Ta=25˚C f=1MHz IE=0A IC=0A Co b −0.2 200 5 −0.1 Ta=100˚C 25˚C −40˚C 100 2 −0.05 50 0.5 1 2 5 10 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 20 50 100 -0.5 -1 -2 -5 -10 -20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current ( II ) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Tr2 (NPN) 50 VCE=6V 100 COLLECTOR CURRENT : IC (mA) Ta=25˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 20 10 5 80 0.50mA mA 0.45 A 0.40m 0.35mA 0.30mA 0.25mA 10 Ta=25˚C 30µA 27µA 24µA 21µA 8 Ta=100˚C 25˚C −55˚C 60 0.20mA 0.15mA 6 18µA 15µA 12µA 9µA 6µA 3µA 2 1 0.5 0.2 0.1 0 0.2 40 0.10mA 4 20 0.05mA 2 IB=0A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 0.4 0.8 1.2 1.6 2.0 0 0 IB=0A 4 8 12 16 20 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Grounded emitter propagation characteristics Fig.11 Grounded emitter output characteristics ( I ) Fig.12 Grounded emitter output characteristics ( II ) Rev.A 3/4 EMY1 / UMY1N / FMY1A Transistors COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 500 500 Ta=25˚C DC CURRENT GAIN : hFE Ta=100˚C VCE=5V 3V 1V 200 VCE=5V 0.5 Ta=25˚C DC CURRENT GAIN : hFE 200 25˚C −55˚C 0.2 100 100 0.1 0.05 IC/IB=50 20 10 50 50 0.02 20 20 10 0.2 0.5 1 2 5 10 20 50 100 200 10 0.2 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.13 DC current gain vs. collector current ( I ) Fig.14 DC current gain vs. collector current ( II ) Fig.15 Collector-emitter saturation voltage vs. collector current ( I ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 0.5 IC/IB=10 0.5 IC/IB=50 TRANSITION FREQUENCY : fT (MHz) 500 Ta=25˚C VCE=6V 0.2 0.2 0.1 0.05 0.1 0.05 Ta=100˚C 25˚C −55˚C Ta=100˚C 25˚C −55˚C 200 0.02 100 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 0.01 0.2 0.5 1 2 5 10 20 50 100 200 50 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.16 Collector-emitter saturation voltage vs. collector current ( II ) Fig.17 Collector-emitter saturation voltage vs. collector current ( III ) Fig.18 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) 20 10 Cib Ta=25˚C f=1MHz IE=0A IC=0A 200 Ta=25˚C f=32MHZ VCB=6V 100 5 50 2 Co b 20 1 0.2 0.5 1 2 5 10 20 50 10 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.19 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.20 Base-collector time constant vs. emitter current Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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