US5U2

US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions (Unit : mm) TUMT5 2.0 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U02 Applications Switching Packaging specifications Package Type US5U2 Code Basic ordering unit (pieces) Taping TR 3000 Inner circuit (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Power dissipation Channel temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch ∗2 Limits 30 20 ±1.4 ±5.6 0.6 5.6 0.7 150 Unit V V A A A A W / ELEMENT °C Rev.B 0.2Max. 1.3 1/4 US5U2 Transistors Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Power dissipation Junction temperature ∗1 60Hz 1cycle ∗2 Mounted on ceramic board Symbol VRM VR IF IFSM PD Tj ∗1 ∗2 Limits 30 20 0.5 2.0 0.5 150 Unit V V A A W / ELEMENT °C Parameter Total power dissipation Range of storage temperature ∗1 Mounted on a ceramic board Symbol PD ∗1 Tstg Limits 1.0 −55 to +150 Unit W / TOTAL °C Electrical characteristics (Ta=25°C) Parameter Symbol Min. − 30 − 1.0 − − − 1.0 − − − − − − − − − − Typ. − − − − 170 250 270 − 70 15 12 6 6 13 8 1.4 0.6 0.3 Max. 10 − 1 2.5 240 350 380 − − − − − − − − 2.0 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.4A, VGS= 10V ID= 1.4A, VGS= 4.5V ID= 1.4A, VGS= 4V VDS= 10V, ID= 1.4A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.7A VGS= 10V RL= 21Ω RG=10Ω VDD 15V, VGS= 5V ID= 1.4A RL= 11Ω, RG= 10Ω IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Parameter Symbol Min. Forward voltage VSD − Typ. − Max. 1.2 Unit V Conditions IS= 0.6A, VGS=0V Parameter Forward voltage Reverse current Symbol VF IR Min. − − − Typ. − − − Max. 0.36 0.47 100 Unit V V µA Conditions IF= 0.1A IF 0.5A VR= 20V Rev.B 2/4 US5U2 Transistors Electrical characteristics curves 1000 GATE-SOURCE VOLTAGE : VGS (V) Ta=25°C f=1MHz VGS=0V 1000 10 Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed tf Ta=25°C 9 VDD=15V ID=1.4A 8 RG=10Ω Pulsed CAPACITANCE : C (pF) SWITCHING TIME : t (ns) 100 Ciss 7 6 5 4 3 2 1 0 100 td(off) 10 Coss Crss 10 td(on) tr 1 0.01 0.1 1 10 100 1 0.01 0.1 1 10 0 1 2 3 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Typical Capacitance vs. Drain-Source Voltage DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (mΩ) VDS=10V Pulsed 1000 900 800 700 ID=1.4A ID=0.7A 10 Ta=25°C Pulsed VGS=0V Pulsed 1 Ta=125°C 75°C 25°C −25°C SOURCE CURRENT : IS (A) DRAIN CURRENT : ID (A) 1 Ta=125°C 75°C 25°C −25°C 600 500 400 300 200 100 0 0 2 4 6 8 10 0.1 0.1 0.01 0.001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-source Voltage Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10000 VGS=10V Pulsed Ta=125°C 10000 VGS=4.5V Pulsed Ta=125°C 75°C 25°C −25°C 10000 Ta=125°C 75°C 25°C −25°C VGS=4V Pulsed 1000 75°C 25°C −25°C 1000 1000 100 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) Rev.B 3/4 US5U2 Transistors 1000 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=4V VGS=4.5V VGS=10V 100 0.1 1 10 DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1