US5U30_1

US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 Structure Silicon P-channel MOSFET Schottky Barrier DIODE Features 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive(2.5V) 4) Built-in schottky barrier diode has low forward voltage. Dimensions (Unit : mm) TUMT5 2.0 Abbreviated symbol : U30 Applications Load switch, DC/DC conversion Packaging specifications Package Type US5U30 Code Basic ordering unit (pieces) Taping TR 3000 Equivalent circuit (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) 0.2Max. 1.3 (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain Rev.B 1/4 US5U30 Transistor Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation Total power dissipation Range of Storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗3 VRM VR IF IFSM Tj PD Limits −20 ±12 ±1 ±4 −0.4 −4 150 0.7 30 20 0.5 2 150 0.5 1.0 −55 to +150 Unit V V A A A A °C W / ELEMENT V V A A °C W / ELEMENT W / TOTAL °C ∗2 ∗3 PD ∗3 Tstg ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 − IDSS Zero gate voltage drain current VGS (th) −0.7 Gate threshold voltage − ∗ Static drain-source on-state − RDS (on) resistance − ∗ 0.7 Yfs Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Crss Reverse transfer capacitance ∗ − td (on) Turn-on delay time ∗ − tr Rise time ∗ − td (off) Turn-off delay time ∗ − tf Fall time − Qg Total gate charge − Qgs Gate-source charge − Qgd Gate-drain charge ∗ Pulsed Typ. − − − − 280 310 570 − 150 20 20 9 8 25 10 2.1 0.5 0.5 Max. ±10 − −1 −2.0 390 430 800 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID=−1mA, VGS=0V VDS=−20V, VGS=0V VDS=−10V, ID=−1mA ID=−1A, VGS=−4.5V ID=−1A, VGS=−4V ID=−0.5A, VGS=−2.5V VDS=−10V, ID=−0.5A VDS=−10V VGS=0V f=1MHz ID=−0.5A VDD −15V VGS=−4.5V RL=30Ω RG=10Ω VDD −15V VGS=−4.5V ID=−1A RL=15Ω RG=10Ω Parameter Forward voltage Symbol VSD Min. − Typ. − Max. −1.2 Unit V Conditions IS=−0.4A, VGS=0V Parameter Forward voltage Reverse current Symbol VF IR Min. − − − Typ. − − − Max. 0.36 0.47 100 Unit V V µA Conditions IF=0.1A IF=0.5A VR=20V Rev.B 2/4 US5U30 Transistor Electrical characteristic curves 10 Drain Current : −ID (A) 1 0.1 Ta=125°C 75°C 25°C −20°C Static Drain−Source On−State Resistance RDS(on)[mΩ] VDS=−10V Pulsed 1000 Static Drain−Source On−State Resistance RDS(on)[mΩ] VGS=−4.5V Pulsed 1000 VGS=−4V Pulsed 100 Ta=125°C 75°C 25°C −25°C 100 Ta=125°C 75°C 25°C −25°C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 0.1 1 10 10 0.1 1 10 Gate−Source Voltage : VGS[V] Drain Current : −ID[A] Drain Current : −ID[A] Fig.1 Typical Transfer Characteristics Fig.2 Static Drain−Source On−State Resistance vs.Drain Current Fig.3 Static Drain−Source On−State Resistance vs.Drain Current 1000 Static Drain−Source On−State Resistance RDS(on)[mΩ] Static Drain−Source On−State Resistance RDS(on)[mΩ] 350 300 250 200 150 100 50 0 0 2 4 6 8 ID=−0.75A −1.5A 100 Ta=125°C 75°C 25°C −25°C Static Drain-Source On−State Resistance RDS(on)[mΩ] VGS=−2.5V Pulsed 400 Ta=25 C Pulsed 1000 Ta=25 C Pulsed 100 VGS=−2.5V −4.0V −4.5V 10 0.1 1 10 Drain Current : −ID[A] 10 12 10 0.1 1 10 Fig.4 Static Drain−Source On−State Resistance vs.Drain−Current Gate−Source Voltage : −VGS[V] Drain Current : −ID[A] Fig.5 Static Drain−Source On−State Resistance vs.Gate−Source Voltage Fig.6 Static Drain−Source On−State Resistance vs.Drain Current 10 Reverse Drain Current : −IDR[A] VGS=0V Pulsed 10000 Ta=25 C f=1MHZ VGS=0V 1000 Capacitance : C [pF] 1 Ta=125°C 75°C 25°C −25°C 1000 Switching Time : t [ns] Ta=25 C VDD=−15V VGS=−4.5V RG=10Ω Pulsed 100 td(off) tf Ciss 100 0.1 10 td(on) tr Coss Crss 0.01 0 0.5 1.0 1.5 2.0 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 Source−Drain Voltage : −VSD[V] Drain−Source Voltage : −VDS[V] Drain Current : −ID[A] Fig.7 Reverse Drain Current vs. Source-Drain Current Fig.8 Typical Capactitance vs.Drain−Source Voltage Fig.9 Switching Characteristics Rev.B 3/4 US5U30 Transistor 8 7 Gate-Source Voltage: -VGS [V] 6 5 4 3 2 1 0 Forward Current : IF [mA] 100 Reverse Current : IR[A] Ta=25 C VDD=−15V ID=−2.5A RG=10Ω Pulsed 1000 Ta=125°C 75°C 25°C −25°C 100 10 1 125°C 75°C 10 0.1 25°C 0.01 1 0.001 0.1 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 −25°C 0 1 2 3 4 5 6 30 40 Forward Voltage :VF [V] Reverse Voltage : VR[V] Total Gate Charge : Qg[nC] Fig.10 Dynamic Input Characteristics Fig.11 Forward Temperature Characteristics Fig.12 Reverse Temperature Characteristics Measurement circuits VGS 10% 50% Pulse Width 50% 90% 10% VGS ID D.U.T. RL VDS 10% VDS 90% 90% RG VDD td(on) ton tr td(off) tf toff Fig.13 Switching Time Measurement Circuit Fig.14 Switching Waveforms VG Qg VGS VGS IG(Const) ID VDS Qgs RG D.U.T. RL Qgd VDD Charge Fig.15 Gate Charge Measurement Circuit Fig.16 Gate Charge Waveforms Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1