US5U35

US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Silicon P-channel MOSFET Schottky Barrier DIODE Features 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching. 3) Built-in schottky barrier diode has low forward voltage. Dimensions (Unit : mm) TUMT5 2.0 Abbreviated symbol : U35 Applications Switching Packaging specifications Package Type US5U35 Code Basic ordering unit (pieces) Taping TR 3000 Equivalent circuit (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain 0.2Max. 1.3 1/5 US5U35 Transistor Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation Power dissipation Range of storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗3 VRM VR IF IFSM Tj PD Limits −45 ±20 ±0.7 ±2.8 −0.4 −2.8 150 0.7 45 40 100 1.0 150 0.5 1.0 −55 to +150 Unit V V A A A A °C W / ELEMENT V V mA A °C W / ELEMENT W / TOTAL °C ∗2 ∗3 PD ∗3 Tstg ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −45 − IDSS Zero gate voltage drain current VGS (th) −1.0 Gate threshold voltage − ∗ Static drain-source on-state − RDS (on) resistance − ∗ 0.6 Yfs Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Crss Reverse transfer capacitance ∗ − td (on) Turn-on delay time ∗ − tr Rise time ∗ − td (off) Turn-off delay time ∗ − tf Fall time − Qg Total gate charge − Qgs Gate-source charge − Qgd Gate-drain charge ∗ Pulsed Typ. − − − − 0.6 0.9 1.0 − 120 14 11 6 5 17 6 1.7 0.8 0.5 Max. ±10 − −1 −2.5 0.8 1.3 1.4 − − − − − − − − − − − Unit µA V µA V Ω Ω Ω S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID=−1mA, VGS=0V VDS=−45V, VGS=0V VDS=−10V, ID=−1mA ID=−0.7A, VGS=−10V ID=−0.7A, VGS=−4.5V ID=−0.35A, VGS=−4.0V VDS=−10V, ID=−0.7A VDS=−10V VGS=0V f=1MHz ID=−0.35A VDD −25V VGS=−10V RL 71Ω RG=10Ω VDD −25V, VGS=−5V ID=−0.7A RL 36Ω, RG=10Ω Parameter Forward voltage ∗ Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS=−0.7A, VGS=0V Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. − − Max. 0.55 30 Unit V µA Conditions IF=100mA VR=10V 2/5 US5U35 Transistor Electrical characteristic curves 1 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VDS=−10V Pulsed 10 VGS=−10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 10 VGS=−4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C DRAIN CURRENT : −ID (A) 0.1 0.01 1 1 0.001 0.0001 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 0.01 0.1 1 0.1 0.01 0.1 1 GATE-SOURCE VOLTAGE : −VGS (V) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current(Ι) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current(ΙΙ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VGS=−4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 1000 SWITCHING TIME : t (ns) Ta=25°C f=1MHZ VGS=0V 1000 CAPACITANCE : C (pF) tf 100 100 Ciss Ta=25°C VDD=−25V VGS=−10V RG=10Ω Pulsed 1 td(off) 10 10 Coss Crss td(on) tr 0.1 0.01 0.1 1 1 0.01 0.1 1 10 100 1 0.01 0.1 1 DRAIN CURRENT : −ID (A) DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(ΙΙΙ) Fig.5 Typical Capacitance vs. Drain-Source Voltage Fig.6 Switching Characteristics 10 8 SOURCE CURRENT : −IS (A) 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C FORWARD TRANSFER ADMITTANCE : Yfs (S) GATE-SOURCE VOLTAGE : −VGS (V) Ta=25°C VDD=−25V ID=−0.7A RG=10Ω Pulsed 1 10 VGS=0V Pulsed VGS=−10V Pulsed 1 6 0.01 Ta=−25°C Ta=25°C Ta=75°C Ta=125°C 4 0.1 0.001 2 0 0 0.0001 1 2 3 4 0 0.5 1.0 1.5 0.01 0.001 0.01 0.1 1 TOTAL GATE CHARGE : Qg (nC) SOURCE-DRAIN VOLTAGE : −VSD (V) DRAIN CURRENT : −ID (A) Fig.7 Dynamic Input Characteristics Fig.8 Source Current vs. Source-Drain Voltage Fig.9 Forward Transfer Admittance vs.Drain Current 3/5 US5U35 Transistor 10000 REVERSE CURRENT : IR [uA] 1000 Ta = 75℃ 100 10 1 Ta= - 25℃ 0.1 0.01 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE : VR [V] Fig.10 Reverse Current vs. Reverse Voltage Ta = 25℃ 0.1 Pulsed FORWARD CURRENT : IF(A) Pulsed Ta = 125℃ 0.01 Ta = 125℃ Ta = 75℃ Ta = 25℃ Ta= - 25℃ 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF(V) Fig.11 Forward Current vs. Forward Voltage Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 4/5 US5U35 Transistor Measurement circuits VGS 10% 50% Pulse Width 50% 90% 10% VGS ID D.U.T. RL VDS 10% VDS 90% 90% RG VDD td(on) ton tr td(off) tf toff Fig.12 Switching Time Measurement Circuit Fig.13 Switching Waveforms VG Qg VGS VGS IG(Const) ID VDS Qgs RG D.U.T. RL Qgd VDD Charge Fig.14 Gate Charge Measurement Circuit Fig.15 Gate Charge Waveforms 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0