US5U38
Transistor
2.5V Drive Pch+SBD MOSFET
US5U38
Structure Silicon P-channel MOSFET Schottky Barrier DIODE Dimensions (Unit : mm)
TUMT5
2.0
Features 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage.
Abbreviated symbol : U38
Applications Switching
Equivalent circuit
(5) (4)
∗2
Packaging specifications
Package Type US5U38 Code Basic ordering unit (pieces) Taping TR 3000
∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3)
(1)Gate (2)Source (3)Anode (4)Cathode (5)Drain
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation Power dissipation Range of storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗3 VRM VR IF IFSM Tj PD Limits −20 ±12 ±1.0 ±4.0 −0.4 −4.0 150 0.7 25 20 0.7 3.0 150 0.5 1.0 −55 to +150 Unit V V A A A A °C W / ELEMENT V V A A °C W / ELEMENT W / TOTAL °C
∗2
∗3
PD ∗3 Tstg
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board
0.2Max.
1.3
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US5U38
Transistor
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 IDSS − Zero gate voltage drain current VGS (th) −0.7 Gate threshold voltage − ∗ Static drain-source on-state − RDS (on) resistance − ∗ 0.7 Yfs Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Crss Reverse transfer capacitance ∗ − td (on) Turn-on delay time ∗ − tr Rise time ∗ − td (off) Turn-off delay time ∗ − tf Fall time − Qg ∗ Total gate charge − Qgs ∗ Gate-source charge − Qgd ∗ Gate-drain charge
∗ Pulsed
Typ. − − − − 280 310 570 − 150 20 20 9 8 25 10 2.1 0.5 0.5
Max. ±10 − −1 −2.0 390 430 800 − − − − − − − − − − −
Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=±12V, VDS=0V ID=−1mA, VGS=0V VDS=−20V, VGS=0V VDS=−10V, ID=−1mA ID=−1A, VGS=−4.5V ID=−1A, VGS=−4.0V ID=−0.5A, VGS=−2.5V VDS=−10V, ID=−0.5A VDS=−10V VGS=0V f=1MHz ID=−0.5A VDD −15V VGS=−4.5V RL 30Ω RG=10Ω ID=−1A, VDD −15V VGS=−4.5V RL 15Ω, RG=10Ω
Parameter Forward voltage Symbol VSD Min. − Typ. − Max. −1.2 Unit V Conditions IS=−0.4A, VGS=0V
Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. − − Max. 0.49 200 Unit V µA Conditions IF=0.7A VR=20V
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US5U38
Transistor
Electrical characteristic curves
STATIC DRAIN−SOURCE ON−STATE RESISTANCE : RDS(on)[mΩ]
10 VDS=−10V Pulsed
10000 VGS=−4.5V Pulsed
STATIC DRAIN−SOURCE ON−STATE RESISTANCE : RDS(on)[mΩ]
10000
VGS=−4V Pulsed
DRAIN CURRENT : −ID (A)
1
0.1
Ta=125°C 75°C 25°C −25°C
1000
Ta=125°C 75°C 25°C −25°C
1000
Ta=125°C 75°C 25°C −25°C
0.01
0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
100 0.01
0.1
1
10
GATE−SOURCE VOLTAGE : -VGS[V]
DRAIN CURRENT : −ID[A]
100 0.01
0.1
1
10
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain−Source On−State Resistance vs.Drain Current ( Ι )
DRAIN CURRENT : −ID[A]
Fig.3 Static Drain−Source On−State Resistance vs.Drain Current ( ΙΙ )
STATIC DRAIN−SOURCE ON−STATE RESISTANCE : RDS(on)[mΩ]
VGS=−2.5V Pulsed
STATIC DRAIN−SOURCE ON−STATE RESISTANCE : RDS(on)[mΩ]
1000
STATIC DRAIN-SOURCE ON−STATE RESISTANCE : RDS(on)[mΩ]
10000
10000
Ta=25°C Pulsed
Ta=25 C Pulsed
1000
Ta=125°C 75°C 25°C −25°C
750
ID=−0.5A −1A
500
1000
VGS=−2.5V −4.0V −4.5V
250
100 0.01
0
0.1
1
10
0
2
4
6
8
10
12
100 0.01
0.1
1
10
DRAIN CURRENT : −ID[A]
Fig.4 Static Drain−Source On−State Resistance vs.Drain−Current ( ΙΙΙ )
GATE−SOURCE VOLTAGE : −VGS[V]
DRAIN CURRENT : −ID[A]
Fig.5 Static Drain−Source On−State Resistance vs.Gate−Source Voltage
Fig.6 Static Drain−Source On−State Resistance vs.Drain Current
10
REVERSE DRAIN CURRENT : −IS[A]
VGS=0V Pulsed
1000
Ta=25 C f=1MHZ VGS=0V
10000
1
Ta=125°C 75°C 25°C −25°C
CAPACITANCE : C [pF]
SWITCHING TIME : t [ns]
1000
Ta=25°C VDD=−15V VGS=−4.5V RG=10Ω Pulsed
Ciss
100
tf
100
td(off)
10
0.1
td(on) tr
Crss Coss
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01 0.0
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
SOURCE−DRAIN VOLTAGE : −VSD[V]
DRAIN−SOURCE VOLTAGE : −VDS[V]
DRAIN CURRENT : −ID[A]
Fig.7 Reverse Drain Current vs. Source-Drain Current
Fig.8 Typical Capactitance vs.Drain−Source Voltage
Fig.9 Switching Characteristics
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US5U38
Transistor
100000 Pulsed REVERSE CURRENT : IR [uA] 10000 1000 100 10 Ta= - 25℃ 1 0.1 0.01 0
TOTAL GATE CHARGE : Qg[nC]
5
Ta = 125℃
FORWARD CURRENT : IF(A)
1 pulsed
GATE-SOURCE VOLTAGE: -VGS [V]
4
Ta = 75℃ Ta = 25℃
0.1 Ta = 125℃ Ta = 75℃ Ta = 25℃ 0.01 Ta= - 25℃
3
2
1
Ta=25 C VDD=−15V ID=−1A RG=10Ω Pulsed 0 0.5 1 1.5 2 2.5 3
0
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6
5
10
15
20
25
REVERSE VOLTAGE : VR [V] Fig.11 Reverse Current vs. Reverse Voltage
FORW ARD VOLTAGE : VF(V) Fig.12 Forward Current vs. Forward Voltage
Fig.10 Dynamic Input Characteristics
Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
4/5
US5U38
Transistor
Measurement circuits
VGS 10% 50% Pulse Width 50% 90%
10%
ID VGS D.U.T. RL VDS
10%
VDS
90%
90%
RG
VDD
td(on) ton
tr
td(off)
tf toff
Fig.13 Switching Time Measurement Circuit
Fig.14 Switching Waveforms
VG Qg VGS
VGS
IG(Const)
ID
VDS
Qgs
RG D.U.T. RL
Qgd
VDD
Charge
Fig.15 Gate Charge Measurement Circuit
Fig.16 Gate Charge Waveforms
5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0