US5U3_07

US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions (Unit : mm) TUMT5 2.0 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U03 Applications Switching Package specifications Package Type US5U3 Code Basic ordering unit (pieces) Taping TR 3000 Inner circuit (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Power dissipation Channel temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch ∗2 Limits 30 12 ±1.5 ±6.0 0.6 6.0 0.7 150 Unit V V A A A A W / ELEMENT °C Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Power dissipation Junction temperature ∗1 60Hz 1cycle ∗2 Mounted on ceramic board Symbol VRM VR IF IFSM PD Tj ∗1 ∗2 Limits 25 20 0.7 3.0 0.5 150 Unit V V A A W / ELEMENT °C Rev.B 0.2Max. 1.3 1/3 US5U3 Transistors Parameter Total power dissipation Range of storage temperature ∗1 Mounted on a ceramic board Symbol PD ∗1 Tstg Limits 1.0 −55 to +150 Unit W / TOTAL °C Electrical characteristics (Ta=25°C) Parameter Symbol Min. − 30 − 0.5 − − − 1.5 − − − − − − − − − − Typ. − − − − 170 180 240 − 80 14 12 7 9 15 6 1.6 0.5 0.3 Max. 10 − 1 1.5 240 250 340 − − − − − − − − 2.2 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 4V ID= 1.5A, VGS= 2.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.75A VGS= 4.5V RL= 20Ω RG=10Ω VDD 15V, VGS= 4.5V ID= 1.5A RL= 10Ω, RG= 10Ω IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Parameter Symbol Min. Forward voltage VSD − Typ. − Max. 1.2 Unit V Conditions IS= 0.6A, VGS=0V Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. − − Max. 0.49 200 Unit V µA IF= 0.7A VR= 20V Conditions Rev.B 2/3 US5U3 Transistors Electrical characteristics curves 1000 1000 Ta=25°C f=1MHz VGS=0V GATE-SOURCE VOLTAGE : VGS (V) SWITCHING TIME : t (ns) CAPACITANCE : C (pF) Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed tf 6 Ta=25°C VDD=15V RG=10Ω Pulsed 5 ID=1.5A Ciss 100 Crss Coss 100 td(off) 4 3 2 10 10 td(on) tr 1 0 1 0.01 0.1 1 10 100 1 0.01 0.1 1 10 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 10 1.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (Ω) VDS=10V Pulsed 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 ID=0.75A ID=1.5A Ta=25°C Pulsed 10 VGS=0V Pulsed 1 Ta=125°C 75°C 25°C −25°C SOURCE CURRENT : IS (A) DRAIN CURRENT : ID (A) 1 Ta=125°C 75°C 25°C −25°C 0.1 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 8 9 10 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate source Voltage Fig.6 Source Current vs. Source-Drain Voltage 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VGS=4.5V Pulsed 10 VGS=4.0V Pulsed 10 VGS=2.5V Pulsed 1 Ta=125°C 75°C 25°C −25°C 1 Ta=125°C 75°C 25°C −25°C 1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.1 1 10 0.1 0.01 0.1 1 10 0.1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1