US6H23

US6H23 Transistors Dual digital transistors US6H23 Features In addition to the features of regular digital transistors. 1) Low saturation voltage, typically VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 2) These transistors can be used at high current levels, IC=600mA. Dimensions (Unit : mm) TUMT6 Structure NPN silicon epitaxial planar transistor Abbreviated symbol : H23 Packaging specifications and hFE Package Type Packaging type Code Basic ordering unit (pieces) US6H23 TUMT6 Taping TR 3000 Equivalent circuit (6) (5) (4) R=4.7kΩ TR1 R=4.7kΩ TR2 (1) : Emitter (2) : Base (3) : Collector (4) : Emitter (5) : Base (6) : Collector (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 20 20 12 600 1 0.4(TOTAL) 1.0(TOTAL) 0.7(ELEMENT) 150 −55 to +150 Unit V V V mA A ∗1 W ∗2 W ∗3 W ∗3 °C °C Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms 1 Pulse ∗2 Each terminal mounted on a recommended land ∗3 Mounted on a ceramic board 0.2Max. 1/3 US6H23 Transistor Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions 20 Collector-emitter breakdown voltage BVCEO − − V IC=1mA BVCBO 20 Collector-base breakdown voltage − − V IC=50µA BVEBO 12 Emitter-base breakdown voltage − − V IE=50µA ICBO Collector cutoff current − − 500 nA VCB=20V IEBO Emitter cutoff current − − 500 nA VEB=12V 40 Collector-emitter saturation voltage VCE (sat) − 150 mV IC / IB=50mA / 2.5mA hFE VCE=5V, IC=50mA DC current gain 820 − 2700 − fT ∗ Transition frequency − 150 − MHz VCE=10V, IE=50mA, f=100MHz Cob ∗ Collector output capacitance − 6 − pF VCB=10V, IE= 0mA, f=1MHz R − Input resistance 3.29 4.7 6.11 kΩ Ron Output ON resistance 0.55 − − Ω VI=5V, RL=1kΩ, f=1kHz ∗Characteristics of built-in transistor. Ron measurement circuit RL=1kΩ Ron= v0 ×RL vi−v0 vi 100mV(rms) f=1kHz vI V v0 Fig.1 Output "ON" resistance (Ron) measurement circuit 2/3 US6H23 Transistor Electrical characterristic curves 100 COLLECTOR CURRENT : Ic (mA) VCE=5V 100 Ta=25˚C IB=50uA 10000 Ta=125°C Ta=25°C Ta= −40°C COLLECTOR CURRENT : IC (mA) 80 IB=40uA IB=30uA IB=20uA 10 60 DC CURRENT GAIN : hFE Ta=125˚C 25˚C −40˚C VCE=5V 1000 40 IB=10uA 20 1 0.1 0.1 1 10 0 100 0 1 2 3 4 5 6 7 8 9 10 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Typical output characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ic/Ib=20 BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) 1 1000 Ic/Ib=20 100000 10000 1000 100 10 1 0.1 0.1 100 0.1 Ta=125˚C 25˚C −40˚C 0.01 10 Ta=−40˚C 25˚C 125˚C 1 0.001 0.1 1 10 100 1000 0.1 0.1 ON RESISTANCE : Ron (Ω) Ta=25°C f=1kHz RL=1kΩ hFE=1500 (5V / 50mA) 1 10 100 1 10 100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) INPUT VOLTAGE : VI (V) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Base-emitter saturation voltage vs. collector current Fig.6 "ON" resistance vs. input voltage 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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