US6J11_09

1.5V Drive Pch+Pch MOSFET US6J11 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TUMT6 0.2Max. Features 1) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (1.5V) makes this device ideal for portable equipment. 5) Drive circuits can be simple. Abbreviated symbol : J11 Application Switching Inner circuit (6) (5) ∗1 (4) Packaging specifications Package Type US6J11 Code Basic ordering unit (pieces) Taping TR 3000 ∗2 ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch Tstg ∗2 Limits −12 ±10 ±1.3 ±5.2 −0.5 −5.2 1.0 0.7 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C Thermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 125 179 Unit °C/W / TOTAL °C/W / ELEMENT www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.08 - Rev.A US6J11 Electrical characteristics (Ta=25°C) Symbol Min. Parameter Gate-source leakage IGSS − Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −0.3 − − ∗ Static drain-source on-state RDS (on) resistance − Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ Pulsed Data Sheet Typ. − − − − 190 280 400 530 − 290 28 21 8 10 30 9 2.4 0.6 0.4 Max. ±10 − −1 −1.0 260 390 600 1060 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF nS nS nS nS nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −1.3A, VGS= −4.5V ID= −0.6A, VGS= −2.5V ID= −0.6A, VGS= −1.8V ID= −0.2A, VGS= −1.5V VDS= −6V, ID= −1.3A VDS= −6V VGS=0V f=1MHz VDD −6V ID= −0.6A VGS= −4.5V RL 10Ω RG=10Ω VDD −6V RL=4.6Ω ID= −1.3A RG=10Ω VGS= −4.5V Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ − 1.4 − − − − − − − − − − Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗ Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −1.3A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.08 - Rev.A US6J11 Electrical characteristics curves 2 Ta=25°C Pulsed DRAIN CURRENT : -ID [A] 2 VGS= -10V VGS= -4.5V VGS= -2.5V VGS= -1.8V 1 VGS= -1.5V 0.5 VGS= -1.2V VGS= -4.5V VGS= -2.5V VGS= -1.8V 10 Ta=25°C Pulsed DRAIN CURRENT : -ID [A] 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C VDS= -6V Pulsed Data Sheet 1.5 DRAIN CURRENT : -ID [A] 1.5 1 VGS= -1.5V VGS= -1.2V 0.1 0.5 VGS= -1.0V 0.01 0 0 0.2 0.4 0.6 0.8 1 0 0 2 4 6 8 10 0.001 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics( I ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics( Ι Ι ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10000 10000 VGS= -4.5V Pulsed 10000 VGS= -2.5V Pulsed 1000 1000 1000 100 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 10 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 10 10 0.01 0.1 1 10 10 0.01 10 0.01 DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ι ) DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ι Ι ) DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ι Ι Ι ) 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= -1.8V Pulsed 10000 VGS= -1.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 VDS= -6V Pulsed 1000 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 0.1 1 10 10 0.01 0.1 1 10 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(IV) DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(V) DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.08 - Rev.A US6J11 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10 REVERSE DRAIN CURRENT : -Is [A] 600 500 400 300 200 100 tr 0.01 0 0.5 1 1.5 0 0 2 4 6 8 10 1 0.01 0.1 1 10 td(on) ID = -0.6A ID = -1.3A Ta=25°C Pulsed 1000 SWITCHING TIME : t [ns] tf 100 td(off) Data Sheet 1 Ta=25°C VDD = -6V VGS= -4.5V RG=10Ω Pulsed 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID [A] Fig.12 Switching Characteristics 5 GATE-SOURCE VOLTAGE : -VGS [V] 1000 4 CAPACITANCE : C [pF] 100 Ciss 3 2 Ta=25°C VDD = -6V ID = -1.3A RG=10Ω Pulsed 0 0.5 1 1.5 2 2.5 3 10 Coss Crss Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 10 100 1 0 1 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage Measurement circuits Pulse width ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms VG ID VGS RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate charge waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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