US6K4

US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04 Applications Switching Packaging specifications Package Type US6K4 Code Basic ordering unit (pieces) Taping TR 3000 Inner circuit (6) (5) (4) ∗1 ∗2 ∗2 ∗1 (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch Tstg ∗2 Limits 20 ±10 ±1.5 ±3.0 0.6 2.4 1.0 0.7 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 125 179 Unit °C/W / TOTAL °C/W / ELEMENT Rev.A 0.2Max. 1/3 US6K4 Transistors Electrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 20 − 0.3 − − − 1.6 − − − − − − − − − − Typ. − − − − 130 170 220 − 110 18 15 5 5 20 3 1.8 0.3 0.3 Max. ±10 − 1 1.0 180 240 310 − − − − − − − − 2.5 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 2.5V ID= 0.8A, VGS= 1.8V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz ID= 1.0A VDD 10V VGS= 4.5V RL= 10Ω RGS=10Ω VDD 10V VGS= 4.5V ID= 1.5A Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. 1.2 Unit V Conditions IS= 0.6A, VGS=0V Rev.A 2/3 US6K4 Transistors Electrical characteristics curves 1000 100 tf GATE-SOURCE VOLTAGE : VGS (V) Ta=25°C f=1MHz VGS=0V 1000 SWITCHING TIME : t (ns) CAPACITANCE : C (pF) Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed 5 Ta=25°C VDD=10V ID=1.5A 4 RG=10Ω Pulsed 3 100 Ciss td(off) 2 10 td(on) 1 tr Coss Crss 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) VDS=10V Pulsed Ta=125°C 75°C 25°C −25°C 500 450 400 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 ID=0.8A ID=1.5A Ta=25°C Pulsed 10 VGS=0V Pulsed Ta=125°C DRAIN CURRENT : ID (A) 1 SOURCE CURRENT : IS (A) 1 75°C 25°C −25°C 0.1 0.01 0.1 0.001 0.0001 0.0 0.5 1.0 1.5 2.0 8 9 10 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-source Voltage 1000 1000 Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=125°C 75°C 25°C −25°C Ta=125°C 75°C 25°C −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 VGS=1.8V Pulsed VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C VGS=4.5V Pulsed 100 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0