US6M11_09

1.5V Drive Nch+Pch MOSFET US6M11 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions (Unit : mm) TUMT6 Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M11 Applications Switching Inner circuit (6) (5) (4) ∗1 Packaging specifications Package Type US6M11 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Taping TR 3000 ∗2 ∗2 Code Basic ordering unit (pieces) ∗1 (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Continuous Pulsed Continuous Pulsed Limits Unit Tr1 : Nchannel Tr2 : Pchannel 20 V −12 ±10 V ±10 A ±1.3 ±1.5 A ±5.2 ±6 0.5 A −0.5 6 A −5.2 1.0 W / TOTAL 0.7 150 −55 to +150 W / ELEMENT °C °C Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 125 179 Unit °C/W / TOTAL °C/W / ELEMENT www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 0.2Max. 1/7 2009.07 - Rev.A US6M11 Electrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Data Sheet RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 20 − 0.3 − − − − 1.6 − − − − − − − − − − Typ. − − − − 130 170 220 300 − 110 18 15 5 5 20 3 1.8 0.3 0.3 Max. ±10 − 1 1.0 180 240 310 600 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 2.5V ID= 0.8A, VGS= 1.8V ID= 0.3A, VGS= 1.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 10V ID= 1A VGS= 4.5V RL 10Ω RG=10Ω VDD 10V, VGS= 4.5V ID= 1.5A RL 6.7Ω, RG= 10Ω Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS= 1.5A, VGS=0V Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.3 − − Static drain-source on-state ∗ RDS (on) resistance − − Forward transfer admittance Yfs ∗ 1.4 Input capacitance − Ciss Output capacitance − Coss Reverse transfer capacitance Crss − Turn-on delay time td (on) ∗ − Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time tf ∗ − Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ ∗Pulsed Typ. − − − − 190 280 400 530 − 290 28 21 8 10 30 9 2.4 0.6 0.4 Max. ±10 − −1 −1.0 260 390 600 1060 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −1.3A, VGS= −4.5V ID= −0.6A, VGS= −2.5V ID= −0.6A, VGS= −1.8V ID= −0.2A, VGS= −1.5V VDS= −6V, ID= −1.3A VDS= −6V VGS= 0V f=1MHz VDD −6V ID= −0.6A VGS= −4.5V RL 10Ω RG= 10Ω VDD −6V, VGS= −4.5V ID= −1.3A RL 4.6Ω, RG= 10Ω Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −1.3A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/7 2009.07 - Rev.A US6M11 Electrical characteristic curves 1.5 DRAIN CURRENT : ID [A] VGS= 10V VGS= 4.5V VGS= 2.5V Ta=25°C Pulsed DRAIN CURRENT : ID [A] 1.5 VGS= 4.5V VGS= 1.8V VGS= 1.5V 1 Ta=25°C Pulsed DRAIN CURRENT : ID [A] 10 VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Data Sheet 1 1 VGS= 1.8V VGS= 1.5V 0.1 0.5 VGS= 1.3V 0.5 VGS= 1.1V 0 VGS= 1.3V 0.01 VGS= 1.2V 0 0 0.2 0.4 0.6 0.8 1 0.001 0 2 4 6 8 10 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] Ta= 25°C Pulsed 10000 VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V VGS= 4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10000 VGS= 2.5V Pulsed 1000 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 10 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) DRAIN-CURRENT : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] VGS= 1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10000 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VGS= 1.5V Pulsed 10 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VDS= 10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) DRAIN-CURRENT : ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) DRAIN-CURRENT : ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/7 2009.07 - Rev.A US6M11 10 REVERSE DRAIN CURRENT : Is [A] VGS=0V Pulsed 600 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 500 ID = 0.8A 400 ID = 1.5A 300 200 100 tr 0 0 0.5 1 1.5 0 2 4 6 8 10 1 0.01 0.1 1 10 Ta=25°C Pulsed SWITCHING TIME : t [ns] 1000 Ta=25°C VDD = 10V VGS=4.5V RG=10Ω Pulsed Data Sheet td(off) 100 tf 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 td(on) 0.01 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : ID [A] Fig.12 Switching Characteristics 5 GATE-SOURCE VOLTAGE : VGS [V] 1000 CAPACITANCE : C [pF] 4 Ta=25°C f=1MHz VGS=0V Ciss 3 100 Coss Crss 2 Ta=25°C VDD = 10V ID = 1.5A RG=10Ω Pulsed 0 0.5 1 1.5 2 1 0 10 0.01 0.1 1 10 100 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/7 2009.07 - Rev.A US6M11 2 DRAIN CURRENT : -ID [A] Ta=25°C Pulsed 2 VGS= -10V VGS= -4.5V VGS= -2.5V VGS= -1.8V 1 VGS= -1.5V 0.5 VGS= -1.2V VGS= -4.5V VGS= -2.5V VGS= -1.8V Ta=25°C Pulsed DRAIN CURRENT : -ID [A] 10 VDS= -6V Pulsed Data Sheet 1.5 DRAIN CURRENT : -ID [A] 1.5 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 VGS= -1.5V VGS= -1.2V 0.1 0.5 VGS= -1.0V 0.01 0 0 0.2 0.4 0.6 0.8 1 0 0 2 4 6 8 10 0.001 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics( Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] 10000 10000 VGS= -4.5V Pulsed 10000 VGS= -2.5V Pulsed 1000 1000 1000 100 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 10 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 10 10 0.01 0.1 1 10 10 0.01 10 0.01 DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] VGS= -1.8V Pulsed 10000 VGS= -1.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 VDS= -6V Pulsed 1000 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 0.1 1 10 10 0.01 0.1 1 10 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 5/7 2009.07 - Rev.A US6M11 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10 REVERSE DRAIN CURRENT : -Is [A] 600 500 400 300 200 100 tr 0.01 0 0.5 1 1.5 0 0 2 4 6 8 10 1 0.01 0.1 1 10 td(on) ID = -0.6A ID = -1.3A Ta=25°C Pulsed 1000 SWITCHING TIME : t [ns] tf 100 td(off) Data Sheet 1 Ta=25°C VDD = -6V VGS= -4.5V RG=10Ω Pulsed 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID [A] Fig.12 Switching Characteristics 5 GATE-SOURCE VOLTAGE : -VGS [V] 1000 4 CAPACITANCE : C [pF] 100 Ciss 3 2 1 Ta=25°C VDD = -6V ID = -1.3A RG=10Ω Pulsed 10 Coss Crss Ta=25°C f=1MHz VGS=0V 10 100 0 0 0.5 1 1.5 2 2.5 3 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics 1 0.01 0.1 1 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 6/7 2009.07 - Rev.A US6M11 Measurement circuit VGS ID RL D.U.T. RG VDD VGS VDS 50% 10% 10% Data Sheet VDS Pulse Width 90% 50% 10% 90% td(on) ton tr td(off) toff 90% tr Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL VDS Qg VGS Qgs Qgd IG (Const.) RG D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS ID RL D.U.T. RG VDD Pulse Width VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tr Fig.3-1 Switching Time Measurement Circuit ID VGS RL IG(Const.) RG VDD D.U.T. Fig.3-2 Switching Waveforms VG VDS Qg VGS Qgs Qgd Charge Fig.4-1 Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2009 ROHM Co., Ltd. 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