US6U37TR

US6U37 Transistors 2.5V Drive Nch+SBD MOSFET zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions (Unit : mm) 0.2Max. e N co ew m m D es en ig de ns d f TUMT6 or US6U37 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U37 zApplications Switching zInner circuit (6) (5) (4) zPackage specifications Package Type Taping TR Code Basic ordering unit (pieces) ∗2 3000 ∗1 US6U37 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) (1)Gate (2)Source (3)Cathode (4)Anode (5)Anode (6)Drain zAbsolute maximum ratings (Ta=25°C) Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Limits 30 ±12 ±1.5 ±6.0 0.6 6.0 Channel temperature Tch 150 °C Power dissipation PD 0.7 W / ELEMENT Limits 25 20 0.7 Unit V V A 10 150 0.5 A °C W / ELEMENT R Parameter Drain-source voltage Gate-source voltage Drain current N ot Source current (Body diode) Continuous Pulsed Continuous Pulsed ∗2 Unit V V A A A A ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation Symbol VRM VR IF IFSM Tj PD ∗1 ∗2 ∗1 60Hz 1cycle ∗2 Mounted on ceramic board 1/4 US6U37 Transistors Parameter Symbol PD ∗1 Tstg Power dissipation Range of storage temperature Limits Unit 1.0 −55 to +150 W / TOTAL °C or ∗1 Mounted on a ceramic board zElectrical characteristics (Ta=25°C) e N co ew m m D es en ig de ns d f Parameter Symbol Min. Typ. Max. Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) − 30 − 0.5 − − − 1.5 − − − − − − − − − − − − − − 170 180 240 − 80 14 12 7 9 15 6 1.6 0.5 0.3 ±10 − 1 1.5 240 250 340 − − − − − − − − 2.2 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS=±12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 4V ID= 1.5A, VGS= 2.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.75A VGS= 4.5V RL 20Ω RG=10Ω VDD 15V, VGS= 4.5V ID= 1.5A RL 10Ω, RG= 10Ω Parameter Symbol Min. Forward voltage VSD − Typ. − Max. 1.2 Unit V Conditions IS= 0.6A, VGS=0V Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Symbol Min. Typ. Max. Unit Forward voltage VF − − 0.49 V IF= 0.7A Reverse current IR − − 200 µA VR= 20V Conditions N ot R Parameter RDS (on)∗ Conditions 2/4 US6U37 Transistors zElectrical characteristics curves Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed SWITCHING TIME : t (ns) 100 Crss Coss td(off) 10 td(on) 0.1 1 10 tr 1 0.01 100 Fig.1 Typical Capacitance vs. Drain-Source Voltage Ta=125°C 75°C 0.1 0.01 0.001 0.0 25°C −25°C 0.5 1.0 1.5 2.0 75°C 25°C −25°C 1 DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 10 1.5 2 Fig.3 Dynamic Input Characteristics ID=1.5A 0.7 0.6 0.5 ID=0.75A 0.3 0.2 1 VGS=0V Pulsed Ta=125°C 75°C 25°C −25°C 0.1 0.1 1 2 3 4 5 6 7 8 9 10 0.01 0.0 10 VGS=4.0V Pulsed 1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.1 1 DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) R ot STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) N Ta=125°C 1 Fig.2 Switching Characteristics GATE-SOURCE VOLTAGE : VGS (V) VGS=4.5V Pulsed 0.5 10 0 0 2.5 1 0.1 0 TOTAL GATE CHARGE : Qg (nC) 0.8 0.4 1 Ta=25°C Pulsed Fig.4 Typical Transfer Characteristics 0.1 0.01 2 10 0.9 GATE-SOURCE VOLTAGE : VGS (V) 10 1 1.0 VDS=10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on)(Ω) DRAIN CURRENT : ID (A) 1 3 DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) 10 4 0 0.1 SOURCE CURRENT : IS (A) 1 0.01 100 RG=10Ω Pulsed 10 Fig.6 Source Current vs. Source-Drain Voltage 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 10 tf Ta=25°C VDD=15V 5 ID=1.5A e N co ew m m D es en ig de ns d f CAPACITANCE : C (pF) Ciss 6 or 1000 Ta=25°C f=1MHz VGS=0V GATE-SOURCE VOLTAGE : VGS (V) 1000 1 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) 3/4 US6U37 Transistors 1 Ta = 125℃ FORWARD CURRENT : IF(A) pulsed 10000 Ta = 75℃ 1000 Ta = 25℃ 100 10 Ta= - 25℃ 1 0.1 0.01 0.1 or Pulsed Ta = 125℃ Ta = 75℃ Ta = 25℃ 0.01 Ta= - 25℃ e N co ew m m D es en ig de ns d f REVERSE CURRENT : IR [uA] 100000 0.001 0 5 10 15 20 25 0 0.1 REVERSE VOLTAGE : VR [V] 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF(V) Fig.11 Forward Current vs. Forward Voltage Fig.10 Reverse Current vs. Reverse zMeasurement circuit Pulse Width VGS ID VDS 90% 50% 10% VGS RL VDS 50% 10% D.U.T. 10% RG VDD 90% td(on) 90% td(off) tr ton Fig.12 Switching Time Test Circuit tf toff Fig.13 Switching Time Waveforms VG VGS ID VDS R RL N ot IG (Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.14 Gate Charge Measurement Circuit Fig.15 Gate Charge Waveform zNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 4/4 Appendix Notes e N co ew m m D es en ig de ns d f or No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: US6U37TR