VT6K1

Data Sheet 1.2V Drive Nch + Nch MOSFET VT6K1  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) VMT6 0.14 1.2 (6) (5) (4) 0.5 0.14 Features 1) Low on-resistance. 2) Small package(VMT6). 3) Low voltage drive(1.2V drive). 0.92 1.2 (1) (2) (3) 0.16 0.13 0.4 0.4 0.8± 0.1 Abbreviated symbol : K01  Application Switching  Packaging specifications Type VT6K1 Package Code Basic ordering unit (pieces) Taping T2CR 8000   Inner circuit (6) (5) (4) ∗1 ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗1 (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Limits 20 8 100 Unit V V mA mA VDSS Continuous Pulsed VGSS ID IDP PD Tch Tstg *1 *2 400 0.15 W / TOTAL 0.12 W / ELEMENT 150 C 55 to 150 C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.08 - Rev.A VT6K1  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Symbol IGSS IDSS VGS (th) Min. 20 0.3 Static drain-source on-state resistance * RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time *Pulsed Data Sheet Typ. 2.5 3.0 3.8 4.5 6.0 7.1 3.3 1.7 5 4 20 38 Max. 10 1 1.0 3.5 4.2 5.3 9.0 18.0 - Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, V GS=0V VDS=20V, VGS=0V VDS=10V, ID=100A ID=100mA, VGS=4.5V ID=100mA, VGS=2.5V Drain-source breakdown voltage V (BR)DSS  ID=50mA, VGS=1.8V ID=20mA, VGS=1.5V ID=10mA, VGS=1.2V l Yfs l * Ciss Coss Crss td(on)* tr * td(off)* tf * 180 - mS VDS=10V, ID=100mA pF pF pF ns ns ns ns VDS=10V VGS=0V f=1MHz VDD 10V, I D=50mA VGS=4.5V RL=200 RG=10 Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=100mA, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.08 - Rev.A VT6K1 Electrical characteristic curves 　 Data Sheet 0.1 VGS= 4.5V VGS= 4.0V VGS= 2.5V VGS= 1.8V VGS= 1.5V 0.1 VGS= 4.5V VGS= 4.0V VGS= 2.5V VGS= 1.8V VGS= 1.5V Ta=25°C Pulsed DRAIN CURRENT : ID[A] 1 VDS= 10V Pulsed 0.1 0.08 DRAIN CURRENT : ID[A] 0.08 DRAIN CURRENT : ID[A] 0.06 0.06 VGS= 1.2V 0.01 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.04 VGS= 1.2V 0.04 0.02 Ta=25°C Pulsed 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 0.02 0.001 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics(Ⅱ) 0.0001 0 0.5 1 1.5 2 GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics 100000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed 10000 VGS= 1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 100000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 4.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 2.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10000 10000 . 1000 1000 1000 100 0.0001 0.001 0.01 0.1 1 100 0.0001 0.001 0.01 0.1 1 100 0.0001 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 100000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.8V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.2V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10000 10000 10000 1000 1000 1000 100 0.0001 0.001 0.01 0.1 1 100 0.0001 0.001 0.01 0.1 1 100 0.0001 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅵ) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.08 - Rev.A VT6K1 　 Data Sheet FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1 VDS= 10V Pulsed SOURCE CURRENT : Is [A] 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed 10000 Ta=25℃ Pulsed ID= 0.01A 6000 ID= 0.1A 8000 0.1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.01 0 0.5 1 1.5 4000 2000 0.01 0.01 0 0 2 4 6 8 0.1 DRAIN-CURRENT : ID[A] Fig.10 Forward Transfer Admittance vs. Drain Current 1 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 td(off) SWITCHING TIME : t [ns] tf 100 Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed 100 Ta=25°C f=1MHz VGS=0V Ciss 10 10 td(on) CAPACITANCE : C [pF] Crss tr 1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.13 Switching Characteristics 1 1 0.01 0.1 1 10 100 Coss DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.08 - Rev.A VT6K1  Measurement circuits Pulse width VGS ID RL D.U.T. RG VDD VDS Data Sheet VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A