VT6T11
Datasheet
Power management (dual transistor)
l Outline
VCEO
-20V
IC
-200mA
VMT6
fo
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Tr1 and Tr2
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Parameter
l Inner circuit
R
l Features
1)Very small package with two transistors.
2) Suitable for current mirror circuit.
l Application
ot
SWITCH, LED DRIVER
N
l Packaging specifications
Part No.
Package
Package
size
VT6T11
VMT6
1212
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© 2016 ROHM Co., Ltd. All rights reserved.
Taping
code
T2R
1/6
Reel size Tape width
(mm)
(mm)
180
8
Basic
ordering
unit.(pcs)
Marking
8000
T11
20160212 - Rev.001
VT6T11
Datasheet
l Absolute maximum ratings (Ta = 25°C)
Symbol
Values
Unit
Collector-base voltage
VCBO
-20
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
fo
r
Parameter
-5
V
-200
mA
-400
mA
PD*2 *3
150
mW
Tj
150
℃
Tstg
-55 to +150
℃
IC
Collector current
ICP*1
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Power dissipation
Junction temperature
Range of storage temperature
l Electrical characteristics (T a = 25°C)
Parameter
Symbol
Values
Conditions
Unit
Min.
Typ.
Max.
Collector-base breakdown voltage
BVCBO
IC = -50μA
-20
-
-
V
Collector-emitter breakdown
voltage
BVCEO
IC = -1mA
-20
-
-
V
Emitter-base breakdown voltage
BVEBO
IE = -50μA
-5
-
-
V
Collector cut-off current
ICBO
VCB = -20V
-
-
-100
nA
Emitter cut-off current
IEBO
VEB = -5V
-
-
-100
nA
-
-120
-300
mV
120
-
560
-
0.9
-
1.1
-
VCE = -10V, IE = 10mA,
f = 100MHz
-
350
-
MHz
VCB = -10V, IE = 0A,
f = 1MHz
-
3.0
-
pF
Collector-emitter saturation voltage
R
DC current gain
ot
DC current gain ratio
N
Transition frequency
Output capacitance
VCE(sat) IC = -100mA, IB = -10mA
hFE
VCE = -2V, IC = -1mA
hFE(Tr1)
/ hFE(Tr2)
fT
Cob
VCE = -2V, IC = -1mA
*1 Pw=10ms Single Pulse
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
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2/6
20160212 - Rev.001
VT6T11
Datasheet
l Electrical characteristic curves (Ta = 25°C)
Fig.2 Typical Output Characteristics
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Fig.1 Ground Emitter Propagation
Characteristics
Fig.4 DC Current Gain vs. Collector
Current (II)
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Fig.3 DC Current Gain vs. Collector
Current (I)
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3/6
20160212 - Rev.001
VT6T11
Datasheet
l Electrical characteristic curves (Ta = 25°C)
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (II)
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Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (I)
Fig.8 Gain Bandwidth Product vs.
Emitter Current
N
ot
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Fig.7 Base-Emitter Saturation Voltage
vs. Collector Current
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© 2016 ROHM Co., Ltd. All rights reserved.
4/6
20160212 - Rev.001
VT6T11
Datasheet
l Electrical characteristic curves (Ta =25°C)
Fig.10 Safe Operating Area
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Fig.9 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
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5/6
20160212 - Rev.001
VT6T11
Datasheet
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l Dimensions
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6/6
20160212 - Rev.001
Notice
Precaution on using ROHM Products
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7.
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
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8.
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Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
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2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
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For details, please refer to ROHM Mounting specification
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.004
Precautions Regarding Application Examples and External Circuits
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3.
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© 2015 ROHM Co., Ltd. All rights reserved.
Rev.004
Datasheet
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© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001