Power management (dual transistors)
VT6X12
Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm)
0.14
1.2 ± 0.1 (6) (5) (4) 0.5 ± 0.1
0.13 ± 0.05 0.4 0.4
Applications Current mirror circuits Packaging specifications
Package Code Type VT6X12
Tr1
0.8 ± 0.1
Abbreviated symbol : X12
Each lead has same dimensions.
0.2 ± 0.1
Features 1) Very small package with two transistors. 2) Suitable for current mirror circuits.
0.92 ± 0.1
1.2 ± 0.1
(1)
(2)
(3) 0.16 ± 0.05
0.14
0.2 ± 0.1
0 ~ 0.05
VMT6
UNIT : mm
Inner circuit
Taping T2R 8000
Tr2 (6) (5) (4) (1) Base (2) Emitter (3) Emitter (4) Collector (5) Collector (5) Base (6) Collector (6) Base (Tr1) (Tr1) (Tr2) (Tr2) (Tr1) (Tr2) (Tr1) (Tr2)
Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power dissipation Junction temperature Range of storage temperature Element Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg
∗1 ∗2
(1)
(2)
(3)
Limits 50 50 5 100 200 150 120 150 −55 to +150
Unit V V V mA mA mW mW °C °C
∗1 Pw=1mS Single pulse ∗2 Each terminal mounted on a recommended land
Electrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain DC current gain ratio Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE hFE (Tr1) / hFE (Tr2) fT Cob Min. 50 50 5 − − − 120 0.9 − − Typ. − − − − − 0.10 − − 350 1.6 Max. − − − 0.1 0.1 0.30 560 1.1 − − Unit V V V µA µA V − − MHz pF IC=1mA IC=50µA IE=50µA VCB=50V VEB=5V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=6V, IC=1mA VCE=10V, IE=−10mA, f=100MHz VCB=10V, IE=0A, f=1MHz Conditions
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2009.10 - Rev.A
VT6X12
Electrical characteristics curves
COLLECTOR CURRENT : IC (mA)
100
Data Sheet
IB=450uA IB=500uA IB=400uA 50 40 30 20 10 0 0 1 2 3
COLLECTOR CURRENT : IC (mA)
IB=350uA
DC CURENT GAIN : hFE
1000
VCE=5V
10
Ta=125°C 25°C -55°C
IB=300uA IB=250uA IB=200uA IB=150uA IB=100uA
1
100
0.1
VCE =2V
0.01
Ta=25°C
4 5
IB=50uA IB=0A 10 0.1
Ta=125°C 25°C -55°C 1 10 100
0
0.2
0.4
0.6
0.8
1
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1 1000
TRANSITION FREQUENCY :fT (MHz)
COLLECTOR CURRENT : IC (mA)
1
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Ta=25°C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
IC/IB= 10/1
Ta=125°C 25°C -55°C
VCE = 10V Ta=25°C
IC/IB = 20/1 IC/IB =10/1
0.1
0.1
100
0.01 1 10 100
0.01 1 10 100
10 0.1 1 10 100 1000 EMITTER CURRENT : IE (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
100
Cib 10
Cob (pF) Cib (pF)
Cob 1
0
Ta=25°C f=1MHz IE=0 IC=0
0.01 0.1 1 10 100
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V)
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2009.10 - Rev.A
Notice
Notes
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