VT6Z2

Power management (dual transistors) VT6Z2 Structure Silicon epitaxial planar transistor Dimensions (Unit : mm) 0.14 1.2 ± 0.1 (6) (5) (4) 0.5 ± 0.1 Features Very small package with two transistors. 0.92 ± 0.1 1.2 ± 0.1 (1) 0.14 (2) 0.13 ± 0.05 0.4 0.4 Applications Switch, LED driver 0.8 ± 0.1 Abbreviated symbol : Z2 Each lead has same dimensions. 0.2 ± 0.1 (3) 0.16 ± 0.05 0.2 ± 0.1 VMT6 0 ~ 0.05 UNIT : mm Packaging specifications Package Code Type VT6Z2 Basic ordering unit (pieces) Taping T2R 8000 Inner circuit (6) (5) (4) (1) Emitter (2) Base (3) Collector (4) Emitter (5) Base (6) Collector (Tr1) (Tr1) (Tr2) (Tr2) (Tr2) (Tr1) Tr1 Tr2 (1) (2) (3) Absolute maximum ratings (Ta=25°C) (PNP) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ∗1 Pw=1mS Single pulse Symbol VCBO VCEO VEBO IC ICP ∗1 Limits −50 −50 −5 −100 −200 Unit V V V mA mA (NPN) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ∗1 Pw=1mS Single pulse Symbol VCBO VCEO VEBO IC ICP ∗1 Limits 50 50 5 100 200 Unit V V V mA mA Parameter Total Power dissipation Element Junction temperature Storage temperature Symbol PD Tj Tstg ∗2 Limits 150 120 150 −55 to +150 Unit mW mW °C °C ∗2 Each terminal mounted on a recommended land www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.10 - Rev.A VT6Z2 Electrical characteristics (Ta=25°C) (PNP) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −50 −50 −5 − − − 120 − − Typ. − − − − − −0.15 − 300 2 Max. − − − −0.1 −0.1 −0.40 560 − − Unit V V V µA µA V − MHz pF IC= −1mA IC= −50µA IE= −50µA VCB= −50V VEB= −5V IC= −50mA, IB= −5mA VCE= −6V, IC= −1mA Conditions Data Sheet VCE= −10V, IE=−10mA, f=100MHz VCB= −10V, IE=0A, f=1MHz (NPN) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 50 50 5 − − − 120 − − Typ. − − − − − 0.10 − 350 1.6 Max. − − − 0.1 0.1 0.30 560 − − Unit V V V µA µA V − MHz pF IC=1mA IC=50µA IE=50µA VCB=50V VEB=5V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=10V, IE=−10mA, f=100MHz VCB=10V, IE=0A, f=1MHz Conditions www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.10 - Rev.A VT6Z2 Electrical characteristics curves (PNP) IB=500uA COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Data Sheet -100 VCE =2V Ta=125 C     25 C         -55 C -50 -40 -30 -20 -10 0 IB=450uA IB=400uA IB=350uA IB=300uA IB=250uA IB=200uA IB=150uA IB=100uA IB=50uA 1000 DC CURENT GAIN : hFE VCE=5V -10 -1 100 -0.1 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1 BASE TO EMITTER VOLTAGE : VBE (V) Ta=25 C 0 -1 -2 -3 -4 -5 IB=0uA Ta=125 C 25 C -55 C 10 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) TRANSITION FREQUENCY :fT (MHz) -1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -1 Ta=25 C IC/IB = 20/1 IC/IB = 10/1 IC/IB = 10/1 Ta=125 C 25 C -55 C 1000 VCE = 10V Ta = 25 C -0.1 -0.1 100 -0.01 -1 -10 -100 COLLECTOR CURRENT : IC (mA) -0.01 -1 -10 -100 10 -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT ：IE (mA) 100 10 Cob (pF) Cib (pF) Cib Cob 1 0.1 Ta=25 C f=1MHz IE=0 IC=0 -0.1 -1 -10 -100 -0.01 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V) www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.10 - Rev.A VT6Z2 (NPN) COLLECTOR CURRENT : IC (mA) 100 Data Sheet IB=450uA IB=500uA IB=400uA 50 40 30 20 10 0 0 1 2 3 COLLECTOR CURRENT : IC (mA) IB=350uA DC CURENT GAIN : hFE 1000 VCE=5V 10 Ta=125°C 25°C -55°C IB=300uA IB=250uA IB=200uA IB=150uA IB=100uA 1 100 0.1 VCE =2V 0.01 Ta=25°C 4 5 IB=50uA IB=0A 10 0.1 Ta=125°C 25°C -55°C 1 10 100 0 0.2 0.4 0.6 0.8 1 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1 1000 TRANSITION FREQUENCY :fT (MHz) COLLECTOR CURRENT : IC (mA) 1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB= 10/1 Ta=125°C 25°C -55°C VCE = 10V Ta=25°C IC/IB = 20/1 IC/IB =10/1 0.1 0.1 100 0.01 1 10 100 0.01 1 10 100 10 0.1 1 10 100 1000 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 100 Cib 10 Cob (pF) Cib (pF) Cob 1 0 Ta=25°C f=1MHz IE=0 IC=0 0.01 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V) www.rohm.com c ○ 2009 ROHM Co., Ltd. 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