ZDX080N50

ZDX080N50 Nch 500V 8A Power MOSFET Datasheet lOutline 500V RDS(on) (Max.) 0.85W ID 8A PD 40W TO-220FM (3) (2) (1) lFeatures or VDSS lInner circuit e N co ew m m D es en ig de ns d f 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication Switching Power Supply Type Bulk Reel size (mm) - Tape width (mm) - Basic ordering unit (pcs) Taping code Marking 500 - ZDX080N50 lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit VDSS 500 V ID *1 8 A ID,pulse *2 24 A VGSS 30 V Power dissipation (Tc = 25°C) PD 40 W Junction temperature Tj 150 °C Tstg -55 to +150 °C R Drain - Source voltage Continuous drain current Tc = 25°C N ot Pulsed drain current Gate - Source voltage Range of storage temperature www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.08 - Rev.A Data Sheet ZDX080N50 lThermal resistance Symbol RthJA Thermal resistance, junction - ambient Values Min. Typ. Max. - - 3.125 lElectrical characteristics(Ta = 25°C) Symbol Conditions Values Min. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 500 °C/W Unit Typ. Max. - - V 100 mA e N co ew m m D es en ig de ns d f Parameter Unit or Parameter Zero gate voltage drain current IDSS VDS = 500V, VGS = 0V - Gate - Source leakage current IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 2.0 - 4.0 V - 0.65 0.85 W Gate threshold voltage RDS(on) *3 VGS = 10V, ID = 4A N ot R Static drain - source on - state resistance www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/11 2012.08 - Rev.A Data Sheet ZDX080N50 lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. gfs *3 VDS = 10V, ID = 4A 2 6 - Input capacitance Ciss VGS = 0V - 1120 - Output capacitance Coss VDS = 25V - 98 - Reverse transfer capacitance Crss f = 1MHz - 7.5 - VDD ⋍ 264V, VGS = 10V - 38 - ID = 8A - 30 - td(off) *3 RL = 33W - 40 - tf *3 RG = 10W - 20 - Rise time tr *3 Turn - off delay time Fall time td(on) *3 e N co ew m m D es en ig de ns d f Turn - on delay time S pF or Transconductance Unit ns lGate Charge characteristics(Ta = 25°C) Parameter Symbol Total gate charge Qg *3 Gate - Source charge Qgs Gate - Drain charge Qgd *3 Gate plateau voltage V(plateau) *3 Conditions Values Min. Typ. Max. VDD ⋍ 250V - 23 - ID = 8A - 7 - VGS = 10V - 9 - VDD ⋍ 250V, ID = 8A - 6 - Unit nC V R *1 Limited only by maximum temperature allowed. *2 Pw  10ms, Duty cycle  1% N ot *3 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/11 2012.08 - Rev.A Data Sheet ZDX080N50 lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Inverse diode continuous, forward current Symbol Conditions IS *1 Values Min. Typ. Max. - - 8 Unit A ISM *2 Forward voltage VSD *3 VGS = 0V, IS = 4A - - 24 A - 1.2 V N ot R e N co ew m m D es en ig de ns d f Inverse diode direct current, pulsed or Tc = 25°C www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/11 2012.08 - Rev.A Data Sheet ZDX080N50 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 100 or PW = 100us 10 Drain Current : ID [A] 80 60 40 20 0 0 e N co ew m m D es en ig de ns d f Power Dissipation : PD/PD max. [%] 120 25 50 75 100 125 150 1 Operation in this area is limited by RDS(on) 0.1 0.01 175 PW = 1ms PW = 10ms Ta=25ºC Single Pulse 0.1 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] 10 Ta=25ºC R 1 0.1 N ot Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 0.01 0.001 0.0001 top D=1 D=0.5 D=0.1 D=0.05 D=0.01 bottom Signle Rth(ch-c)=3.125ºC/W Rth(ch-c)(t)=r(t)×Rth(ch-c) 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/11 2012.08 - Rev.A Data Sheet ZDX080N50 lElectrical characteristic curves Fig.5 Typical Output Characteristics(II) Fig.4 Typical Output Characteristics(I) 8 1 0.9 VGS=10.0V VGS=4.5V Drain Current : ID [A] 0.6 0.5 0.4 0.3 0.2 VGS=8.0V VGS=6.0V 5 4 3 2 VGS=5.0V 1 0.1 0 6 VGS=4.0V 0.7 e N co ew m m D es en ig de ns d f Drain Current : ID [A] 0.8 Ta=25ºC Pulsed 7 or Ta=25ºC Pulsed 0 0.2 0.4 0.6 0.8 0 1 0 2 10 100 VDS= 10V VGS = 0V ID = 1mA 700 R 650 10 Drain Current : ID [A] 750 600 N ot 550 500 1 0.1 Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0.01 450 400 8 Fig.7 Typical Transfer Characteristics Fig.6 Breakdown Voltage vs. Channel Temperature Drain - Source Breakdown Voltage : V(BR)DSS [V] 6 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] 800 4 -50 0 50 100 0.001 150 Junction Temperature : Tj [°C] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0 1 2 3 4 5 6 7 8 Gate - Source Voltage : VGS [V] 6/11 2012.08 - Rev.A Data Sheet ZDX080N50 lElectrical characteristic curves Fig.9 Transconductance vs. Drain Current 100 VDS = 10V ID = 1mA Transconductance : gfs [S] 4.0 3.0 2.0 1.0 0.0 VDS= 10V 10 e N co ew m m D es en ig de ns d f Gate Threshold Voltage : VGS(th) [V] 5.0 or Fig.8 Gate Threshold Voltage vs. Channel Temperature -50 -25 0 25 50 75 1 0.1 0.01 0.01 100 125 150 Junction Temperature : Tj [°C] Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 1 10 100 Drain Current : ID [A] 9 Ta=25ºC 8 7 ID = 4.0A R 6 5 4 N ot Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.10 Static Drain - Source On - State Resistance vs. Gate Source Voltage 3 ID = 8.0A 2 1 0 0 2 4 6 8 10 Gate - Source Voltage : VGS [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 7/11 2012.08 - Rev.A Data Sheet ZDX080N50 lElectrical characteristic curves Fig.11 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.12 Static Drain - Source On - State Resistance vs. Junction Temperature Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1 0 0.01 VGS = 10V ID = 8A 4 or 10 Static Drain - Source On-State Resistance : RDS(on) [mW] 5 VGS= 10V 3 e N co ew m m D es en ig de ns d f Static Drain - Source On-State Resistance : RDS(on) [mW] 100 0.1 1 10 Drain Current : ID [A] 2 1 0 -50 0 50 100 150 N ot R Junction Temperature : Tj [ºC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 8/11 2012.08 - Rev.A Data Sheet ZDX080N50 lElectrical characteristic curves Fig.13 Typical Capacitance vs. Drain - Source Voltage Fig.14 Switching Characteristics 10000 10000 Coss 10 1 Crss Ta=25ºC f=1MHz VGS=0V 0.01 or 1000 tf e N co ew m m D es en ig de ns d f Capacitance : C [pF] 100 Switching Time : t [ns] Ciss 1000 td(off) 100 10 tr 0.1 1 10 100 1 1000 0.01 0.1 Drain - Source Voltage : VDS [V] 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Inverse Diode Forward Current : IS [A] R Gate - Source Voltage : VGS [V] N ot 5 10 VGS=0V Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1 0.1 0.01 0.0 0.5 1.0 1.5 Source - Drain Voltage : VSD [V] Total Gate Charge : Qg [nC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 Fig.16 Inverse Diode Forward Current vs. Source - Drain Voltage 10 Ta = 25ºC VDD = 250V ID = 8A RG = 10W td(on) Drain Current : ID [A] Fig.15 Dynamic Input Characteristics 10 Ta=25ºC VDD= 264V VGS= 10V RG=10W 9/11 2012.08 - Rev.A Data Sheet ZDX080N50 lMeasurement circuits Fig.1-2　Switching Waveforms e N co ew m m D es en ig de ns d f or Fig.1-1 Switching Time Measurement Circuit Fig.2-2 Gate Charge Waveform N ot R Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10/11 2012.08 - Rev.A Data Sheet ZDX080N50 lDimensions (Unit : mm) D TO-220FM E A E1 A1 A A2 e N co ew m m D es en ig de ns d f A4 or F φp b1 L Q c e b DIM N ot R A A1 A2 A4 b b1 c D E e E1 F L p Q x x A MILIMETERS MIN MAX 16.60 17.60 1.80 2.20 14.80 15.40 6.80 7.20 0.70 0.85 1.10 1.50 0.70 0.85 9.90 10.30 4.40 4.80 2.54 2.70 3.00 2.80 3.20 11.50 12.50 3.00 3.40 2.10 3.10 0.381 INCHES MIN 0.654 0.071 0.583 0.268 0.028 0.043 0.028 0.39 0.173 MAX 0.693 0.087 0.606 0.283 0.033 0.059 0.033 0.406 0.189 0.10 0.106 0.11 0.453 0.118 0.083 - 0.118 0.126 0.492 0.134 0.122 0.015 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 11/11 2012.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. or The content specified herein is subject to change for improvement without notice. e N co ew m m D es en ig de ns d f The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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